• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.911-919
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• 1994

As the study for preparation of single-layer anti-reflective coating on glass, the conditions of synthesis of sol for coating and of reproducible coating procedure were investigated. In case of water-based sol, coating was impossible because of poor wettability of sol. The Substitution of solvent with ethanol improved the wettability of sol on the glass surface, and optimum amount of ethanol for substitution was 70 vol%. Maximum specific surface area and total pore volume of water-based sol were 268.7$m^2$/g and 0.315 cc/g, but after substitution, those values increased to 404.1 $m^2$/g and 0.376 cc/g, respectively. The upper limit withdrawl speed of coating in order to get clean coated films without aggregations or stains was 7 cm/min. In case of addition of 0.1 mol HNO3 and substitution with 70 vol% ethanol and heat-treatment at 40$0^{\circ}C$ for 1 hour, thin film with thickness of 94 nm was obtained at withdrawl speed of 4 cm/min. The thickness of thin film was independent of drying time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.118-124
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• 2016

In this study, experiments are conducted to improve spray coating uniformity by using second and third electrodes based on the electrospray atomization mechanism. The uniformity of fabricated thin films can be improved by adjusting the design of the second electrode. The implementation of the second electrode with an elongated hole and a bending angle of $90^{\circ}$ results in highly uniform films. In addition, induced area to substrate is increased by lowering the applied voltage using the third electrode with a round rod shape. A linear correlation between applied voltage and induced area is confirmed. Thin film thickness and surface roughness are measured after the fabrication of thin films through the electrospray process. It is confirmed that a thin film is formed having an average thickness of 273.44 nm, a thickness uniformity of less than 10%, and a surface roughness of 3 nm.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.264-269
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• 2000

TiO$_2$thin films were prepared on the glass by a conventional spin coating method with $TiO_2$ sol(30wt%, anatase). The thickness of the thin films were controlled by the number of coating cycles: one cycle is composed of spin coating, drying, and heating process. The reaction rate of the film was obtained by the photodecomposition of gaseous benzene under 0.44 and 2.0mW/$\textrm{cm}^2$ UV light on the film surface. For an incident UV light intensity of 0.44mW/$\textrm{cm}^2$, the reaction rate was increased with the thickness of the film, caused by extent of surface area, but there was no change over the thickness of about 4$\mu\textrm{m}$. The porous $TiO_2$ thin film has comparatively vast effective surface area, which under relatively high-intensity UV illumination causes the reaction rate to be controlled by the film thickness.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.6
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• pp.491-495
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• 2014

We developed a compact high-precision slot-die coating machine for thin-film deposition on a flexible substrate. For smooth and precise coating, air-bearing and linear motor system were employed to minimize velocity ripple. The gap control mechanism is specially designed to have repeatability of gap between nozzle and substrate under 1 ${\mu}m$. Due to extremely precise gap control, the machine can coat thin-films down to 50 nm with $200mm{\times}100mm$ size. A thin film of Ag nano-particle ink is coated for demonstration.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.216-222
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• 1992

PLZT thin films were prepared using sol-gel spin coating. The films mainly consisted of perovskite phase when heat treated at 600$^{\circ}C$ and in O2 or air atmosphere for 2 hours after 7 coating cycles. Cracks were formed when smaller than after 9 coating cycles. When ITO interlayer existed between Corning 7059 glass substrate and the film, cracks were not formed after 9 coating cycles, but cracks were formed after 11 coating cycles because of large volume change of the film contracting on the substrate during the heat treatment. In the observation of microstructure, the thin films have perovskite phase of about 2 $\mu\textrm{m}$ grain size and pyrochlore phase of 100∼200${\AA}$ grain size.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.416-416
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• 2016

Organic-inorganic metal halide perovskite solar cells have received attention because it has a number of advantages with excellent light harvesting, high carrier mobility, and facile solution processability and also recorded recently power conversion efficiency (PCEs) of over 20%. The major issue on perovskite solar cells have been reached the limit of small area laboratory scale devices produced using fabrication techniques such as spin coating and physical vapor deposition which are incompatible with low-cost and large area fabrication of perovskite solar cells using printing and coating techniques. To solution these problems, we have investigated the feasibility of achieving fully printable perovskite solar cells by the blade-coating technique. The blade-coating fabrication has been widely used to fabricate organic solar cells (OSCs) and is proven to be a simple, environment-friendly, and low-cost method for the solution-processed photovoltaic. Moreover, the film morphology control in the blade-coating method is much easier than the spray coating and roll-to-roll printing; high-quality photoactive layers with controllable thickness can be performed by using a precisely polished blade with low surface roughness and coating gap control between blade and coating substrate[1]. In order to fabricate perovskite devices with good efficiency, one of the main factors in printed electronic processing is the fabrication of thin films with controlled morphology, high surface coverage and minimum pinholes for high performance, printed thin film perovskite solar cells. Charge dissociation efficiency, charge transport and diffusion length of charge species are dependent on the crystallinity of the film [2]. We fabricated the printed perovskite solar cells with large area and flexible by the bar-coating. The morphology of printed film could be closely related with the condition of the bar-coating technique such as coating speed, concentration and amount of solution, drying condition, and suitable film thickness was also studied by using the optical analysis with SEM. Electrical performance of printed devices is gives hysteresis and efficiency distribution.