• Korean Journal of Materials Research
• /
• v.20 no.12
• /
• pp.686-690
• /
• 2010

$TiO_2$ nanowires were self-catalytically synthesized on bare Si(100) substrates using metallorganic chemical vapor deposition. The nanowire formation was critically affected by growth temperature. The $TiO_2$ nanowires were grown at a high density on Si(100) at $510^{\circ}C$, which is near the complete decomposition temperature ($527^{\circ}C$) of the Ti precursor $(Ti(O-iPr)_2(dpm)_2)$. At $470^{\circ}C$, only very thin (< $0.1{\mu}m$) $TiO_2$ film was formed because the Ti precursor was not completely decomposed. When growth temperature was increased to $550^{\circ}C$ and $670^{\circ}C$, the nanowire formation was also significantly suppressed. A vaporsolid (V-S) growth mechanism excluding a liquid phase appeared to control the nanowire formation. The $TiO_2$ nanowire growth seemed to be activated by carbon, which was supplied by decomposition of the Ti precursor. The $TiO_2$ nanowire density was increased with increased growth pressure in the range of 1.2 to 10 torr. In addition, the nanowire formation was enhanced by using Au and Pt catalysts, which seem to act as catalysts for oxidation. The nanowires consisted of well-aligned ~20-30 nm size rutile and anatase nanocrystallines. This MOCVD synthesis technique is unique and efficient to self-catalytically grow $TiO_2$ nanowires, which hold significant promise for various photocatalysis and solar cell applications.

• Korean Journal of Materials Research
• /
• v.17 no.3
• /
• pp.147-151
• /
• 2007

Cu-free multi-component sol, of which final oxide composition becomes $Bi_{1.9}Pb{0.35}SrCaO,\;Bi_{1.8}Pb_{0.2}SrCaO\;and\;Bi_{1.5}SrCaO$, respectively, was prepared through sol-gel route and coated on a bare Cu substrate. Starting materials were metal-alkoxides as follows.; [$Bi(OC_{2}H_{5})_{3}\;Pb(O^{1}C_{3}H_{7})_{2},\;Sr(O^{i}C_{3}H_{7})_{2},\;Ca(OC_{2}H_{5})_{2}$] as a reagent grade. Transparent light yellowish sol was obtained in the case of $Bi_{1.9}Pb_{0.35}SrCaO\;and\;Bi_{1.8}Pb_{0.2}SrCaO$ composition and $Bi_{1.5}SrCaO$ composition's sol was light greenish. Each sol was repeatedly dip-coated on Cu substrate four times and pre-heated at $400^{\circ}C$ and finally heat-treated in the range of $740{\sim}900^{\circ}C$. In the results, crystalline phases confirmed by XRD were (2201) orthorhombic and monoclinic phases. However, only $Bi_{1.9}Pb_{0.35}SrCaO_{x}$ composition showed pseudo-superconductive behavior after heat-treatment at $900^{\circ}C$ for 12 seconds and then onset temperature was 77 K, even though it did not exhibit zero resistance below Tc.

• Korean Journal of Materials Research
• /
• v.23 no.6
• /
• pp.299-303
• /
• 2013

In this study, a micro gas sensor for $NO_x$ was fabricated using a microelectromechanical system (MEMS) technology and sol-gel process. The membrane and micro heater of the sensor platform were fabricated by a standard MEMS and CMOS technology with minor changes. The sensing electrode and micro heater were designed to have a co-planar structure with a Pt thin film layer. The size of the gas sensor device was about $2mm{\times}2mm$. Indium oxide as a sensing material for the $NO_x$ gas was synthesized by a sol-gel process. The particle size of synthesized $In_2O_3$ was identified as about 50 nm by field emission scanning electron microscopy (FE-SEM). The maximum gas sensitivity of indium oxide, as measured in terms of the relative resistance ($R_s=R_{gas}/R_{air}$), occurred at $300^{\circ}C$ with a value of 8.0 at 1 ppm $NO_2$ gas. The response and recovery times were within 60 seconds and 2 min, respectively. The sensing properties of the $NO_2$ gas showed good linear behavior with an increase of gas concentration. This study confirms that a MEMS-based gas sensor is a potential candidate as an automobile gas sensor with many advantages: small dimension, high sensitivity, short response time and low power consumption.

• Korean Journal of Materials Research
• /
• v.11 no.4
• /
• pp.283-289
• /
• 2001

Composite cathodes of 50/50 vol% LSM- YSZ (La$_{1-x}$Sr$_{x}$MnO$_3$-yttria stabilized zirconia) were deposited onto surface- Polished YSZ electrolytes by colloidal deposition technique. The cathode characteristics were then examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD) and studied by ac impedance spectroscopy (IS). The typical impedance spectra measured for an air/LSM- YSZ/YSZ/Pt/air cell at $700^{\circ}C$ were composed of two depressed arcs. Addition of YSZ to the LSM electrode significantly enlarged the triple-phase boundaries (TPB) length inside the electrode, which led to a pronounced decrease in cathodic resistivity of LSM-YSZ composite electrodes. Polishing the electrolyte surface to eliminate the influences of surface impurities and to enlarge the TPB length can further reduce cathode resistivity. The cathodic resistivity of the LSM- YSZ electrodes was a strong function of operation temperature, composition and particle size of cathode materials, applied current, and electrolyte surface roughness.

• Korean Journal of Materials Research
• /
• v.8 no.3
• /
• pp.229-237
• /
• 1998

We grew the hexagonal GaN films on (100) Si and (00.1) sapphire substrates in the temperature range of $300~730^{\circ}C$ by the direct reaction between thermally ionized N-source and thermally evaporated Ga-source. The GaN growth rates are increased at the initial stage of GaN formation and it was saturated to some values by the coalescence of each crystallites. The oxygen signal was observed in XPS spectra for all the GaN films grown in this work, especially low- temperature grown GaN film may due to incorporation of the residual oxygen in the growth chamber. The surface of low-temperature and shorter time grown films covered only Ga-droplets. however, with increasing the both substrate temperature and the growth time GaN is growth to crystallites. and coalescence to ring-type crystallites. With sufficient supply of N-source, they were changed to platelets. In the PL spectrum measured at 20 K, we observed the impurity related emission at 3.32eV and 3.38eV.

• Korean Journal of Materials Research
• /
• v.8 no.11
• /
• pp.1067-1073
• /
• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.10a
• /
• pp.758-760
• /
• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.2
• /
• pp.125-129
• /
• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.59-62
• /
• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.74-75
• /
• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.