• 제목/요약/키워드: Thin Film

검색결과 11,210건 처리시간 0.038초

진공증착법에 의한 산화철박막의 제조 및 전기적특성 (Preparation of Iron Oxide Thin Films by Vacuum Evaporation Method and Its Electrical Properties)

  • 조경형;오재희
    • 한국세라믹학회지
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    • 제22권6호
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    • pp.87-93
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    • 1985
  • The hematite the magetite and the maghemite thin film were prepared by oxidation and reductino of the vaccum-evaporated iron thin film. Interre;atoms between film preparation process and the electrical properties were investigated. At room temperature the electrical conductivity of the iron the hematite the magnetite and the maghemite thin film were $1{\times}10^4\Omega^{-1}cm^{-1}$, 2{\times}10^{-5}\Omega^{-1}cm^{-1}$, $3{\times}10^{-5}\Omega^{-1}cm^{-1}$, and $4{\times}10^{-5}\Omega^{-1}cm^{-1}$, resp-ectively. The surface of each thin film was dense and homogeneous. At the temperature that the iron thin film was converted into the hematite thin film the electrical conductivity decreased rapidly and the electrical con-ductivity of the hematite thin film increased as temperature increased. The hematite thin film was reduced to the magnetite thin film in H2 atmosphere. The electrical conductivity decreased rapidly at the temperature that the maghemite thin film is formed by oxidation of the magnetite thin film and the electrical conductivity of the maghemite thin film increased as temperature increased.

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그림자효과를 이용하여 증착한 타이타늄 박막의 미세구조 및 형상 (Microstructure and Morphology of Titanium Thin Films Deposited by Using Shadow Effect)

  • 한창석;진성윤;권혁구
    • 한국재료학회지
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    • 제29권11호
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    • pp.709-714
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    • 2019
  • In order to observe the microstructure and morphology of porous titanium -oxide thin film, deposition is performed under a higher Ar gas pressure than is used in the general titanium thin film production method. Black titanium thin film is deposited on stainless steel wire and Cu thin plate at a pressure of about 12 Pa, but lustrous thin film is deposited at lower pressure. The black titanium thin film has a larger apparent thickness than that of the glossy thin film. As a result of scanning electron microscope observation, it is seen that the black thin film has an extremely porous structure and consists of a separated column with periodic step differences on the sides. In this configuration, due to the shadowing effect, the nuclei formed on the substrate periodically grow to form a step. The surface area of the black thin film on the Cu thin plate changes with the bias potential. It has been found that the bias of the small negative is effective in increasing the surface area of the black titanium thin film. These results suggest that porous titanium-oxide thin film can be fabricated by applying the appropriate oxidation process to black titanium thin film composed of separated columns.

The influences of film density on hydration of MgO protective layer in plasma display panel

  • Lee, Jung-Heon;Eun, Jae-Hwan;Park, Sun-Young;Kim, Soo-Gil;Kim, Hyeong-Joon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.228-231
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    • 2002
  • We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

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PET 필름상 형성한 전자파차폐용 박막과 그 특성 (Formation of Electromagnetic Wave Shielding Thin Film on PET Film Substrate and Their Properties)

  • 임경민;이훈성;배일용;문경만;최철수;이명훈
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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    • pp.205-206
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    • 2011
  • Cu thin films for electromagnetic wave shielding were prepared on PET film and Ni-coated PET film by using Dry and Wet coating method, such as evaporation method, DC sputtering method and copper sulfate($CuSO_4$). After that, Zn thin film and Ni thin film were prepared onto the Cu thin films by using evaporation dry process and Ni electro plating wet process as a finishing treatment, respectively. The result of conductivity test and corrosion resistance test revealed Cu thin films which were formed with bigger grain size and high Cu composition rate have superior properties. Zn thin film by dry evaporation process and Ni thin film by wet electro plating process on Cu thin films were largely contributed to corrosion resistance. However, Ni thin film by wet process made conductivity of all specimen worse, the other hand, Zn thin film by dry process made it better to improve condictivity of specimens just prepared by dry process.

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Surface Chemical Reactions for Metal Organic Semiconductor Films by Alternative Atomic Layer Deposition and Thermal Evaporation

  • Kim, Seong Jun;Min, Pok Ki;Lim, Jong Sun;Kong, Ki-Jeong;An, Ki-Seok
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.166.2-166.2
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    • 2014
  • In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

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배향막으로 사용된 NDLC 박막의 증착방법에 따른 능력 (Ability of Nitride-doped Diamond Like Carbon Thin Film as an Alignment Layer according to Deposition Methods)

  • 김영환;김병용;오병윤;강동훈;박홍규;이강민;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.431-431
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    • 2007
  • In this paper, the LC alignment characteristics of the NDLC thin film deposited by PECVD and sputtering were reported respectively. The NDLC thin film deposited using sputter showed uniform LC alignment at the 1200 eV of the ion beam intensity and pretilt angle was about $2^{\circ}$ while the NDLC thin film deposited using the PECVD showed uniform LC alignment and high pretilt angle at the 1800 eV of the ion beam intensity. Concerning the ion beam intensity, uniform LC alignment of the NDLC thin film deposited by the sputtering was achieved at the lower intensity. And the pretilt angle of the NDLC thin film deposited by sputter was higher than those of NDLC thin film that was deposited using the PECVD. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$, respectively. However, NDLC thin film deposited by the PECVD showed stability at high temperature without defects, compared to NDLC thin film deposited by the sputter.

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High Efficiency Thin Film Photovoltaic Device and Technical Evolution for Silicon Thin Film and Cu (In,Ga)(Se,S)

  • 신명훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.88-88
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    • 2012
  • High efficiency thin film photovoltaic device technology is reviewed. At present market situation, the industrial players of thin film technologies have to confront the great recession and need to change their market strategies and find technical alternatives again. Most recent technology trends and technical or industrial progress for Silicon thin film and CIGS are introduced and common interests for high efficiency and reliability are discussed.

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FBAR용 ZnO 박막의 결정학적 특성에 관한 연구 (A study on the crystallographic properties of ZnO thin films for FBAR)

  • 금민종;박원효;윤영수;최형욱;신영화;최동진;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.703-706
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    • 2002
  • Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

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