• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.242.2-242.2
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• 2011

Molecularly imprinted polymer thin films were applied to develop a gas sensor based on the surface plasmon resonance phenomenon for small gaseous molecules such as toluene and xylene. The imprinted polymer films were synthesized via photo-polymerization method using various combination of templates, functional monomers and cross-linkers. The temperature of pre-polymerization solutions and the power of UV light were controlled for optimized performance of gas sensing. The morphology and porosity of the polymer films were controlled by varying the mixing ratios of the pre-polymerization solutions and confirmed by atomic force microscopy. By fitting the adsorption/desorption sensorgrams to conventional kinetic models, the effects of different templates and cross-linkers were interpreted in term of the structural differences of the polymer networks formed on the gold film. The sensitivity and selectivity of sensors were estimated for toluene and xylene, and also for humidity and other gaseous molecules such as formaldehyde and ammonia.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.372-376
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• 1998

We developed a pulsed laser deposition(PLD) apparatus for depositing various thin films. In this study, the formation of $NbS_2$ thin film was performed in the vacuum chamber by PLD method. $Al_2O_3$(012) and Si(111) were used as the substrates. In order to investigate the growth conditions of a high crystalline $NbS_2$ thin film, the S/Nb composition ratio was varied from 2.0 to 5.25 and the substrate temperature was varied from the room temperature to $600^{\circ}C$. From the result of X-ray diffraction studies of the prepared $NbS_2$ thin films, it was reported that the $NbS_2$, thin film showed a good crystallinity at substrate temperature $600^{\circ}C$ and with S/Nb composition ratio 4.0 on $Al_2O_3$(012) but did not on Si(111). The films exhibited c-axis orientation.

• Journal of the Korean Society of Safety
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• v.18 no.3
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• pp.60-63
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• 2003

For the increase the charge stability of teflon electrets for used at uncomfortable industrial circumstances with high temperature or humidity, We made an investigation into double layer effect of teflon electrets. Teflon AF film was spincoated on FEP film and then the charge storage property of AF/FEP dual film was investigated to be compared with FEP film. It was found that the AF/FEP dual film has higher surface potential than FEP film on the repeated charging and annealing process. It seems that AF/FEP dual film has higher thermal stability than FEP film through TSC measurement. If the investigations of the double layer effect of Teflon film carried out more closely with it's molecular structures and surface conditions, it may be effectively improved the stability of charge storage.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.224-227
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• 2015

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

• Journal of Surface Science and Engineering
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• v.40 no.6
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• pp.258-261
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• 2007

Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.343-349
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• 2005

Carbon nitride films were deposited on various substrates for humidity sensors with meshed electrode by reactive RF magnetron sputtering system. As the ratio of injected nitrogen was decreased, the sensitivity of sensor was increased. When the ratio of injected nitrogen was $50{\sim}70%$, the sample showed the best linearity. The sensor impedance changed from $95.4{\;}k{\Omega}$ to $2.1{\;}k{\Omega}$ in a relative humidity range of 5 % to 95 %. The humidity sensors based on silicon wafer revealed higher lineality and faster response than those of alumina or quartz substrates. The adsorption saturation time of the sample was about 80 sec, and its desorption time was about 90 sec.

• Smart Structures and Systems
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• v.26 no.4
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• pp.507-520
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• 2020

In order to achieve effective corrosion monitoring of buried metal pipelines, a Novel nondestructive Testing (NDT) methodology using ultra-long (250 mm) Polymer Optical Fiber (POF) sensors coated with the Fe-C alloy film is proposed in this study. The theoretical principle is investigated to clarify the monitoring mechanism of this method, and the detailed fabrication process of this novel POF sensor is presented. To validate the feasibility of this novel POF sensor, exploratory research of the proposed method was performed using simulated corrosion tests. For simplicity, the geometric shape of the buried pipeline was simulated as a round hot-rolled plain steel bar. A thin nickel layer was applied as the inner plated layer, and the Fe-C alloy film was coated using an electroless plating technique to precisely control the thickness of the alloy film. In the end, systematic sensitivity analysis on corrosion severity was further performed with experimental studies on three sensors fabricated with different metal layer thicknesses of 25 ㎛, 30 ㎛ and 35 ㎛. The experimental observation demonstrated that the sensor coated with 25 ㎛ Fe-C alloy film presented the highest effectiveness with the corrosion sensitivity of 0.3364 mV/g at Δm = 9.32 × 10^-4 g in Stage I and 0.0121 mV/g in Stage III. The research findings indicate that the detection accuracy of the novel POF sensor proposed in this study is satisfying. Moreover, the simple fabrication of the high-sensitivity sensor makes it cost-effective and suitable for the on-site corrosion monitoring of buried metal pipelines.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.36-40
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• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.