• Korean Journal of Materials Research
• /
• v.20 no.5
• /
• pp.235-240
• /
• 2010

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

• Journal of Sensor Science and Technology
• /
• v.13 no.4
• /
• pp.303-308
• /
• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• Korean Journal of Materials Research
• /
• v.17 no.12
• /
• pp.660-663
• /
• 2007

Piezoelectric energy harvesting from our surrounding vibration has been studied for driving the wireless sensor node. To change the vibration energy into the electric-energy efficiently, the natural frequency of cantilever needs to be adjusted to that of a vibration source. When adding 6.80g mass on the end of the fabricated cantilever, a natural frequency shifts from 136 Hz into 49.5 Hz. In addition, electro-mechanical coupling factor increased from 10.20% to 11.90% and resulted in the 1.18 times increase of maximum output power.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.1
• /
• pp.29-33
• /
• 2015

This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of $SiO_2$ and $Nb_2O_5$ for touch sensor application. $SiO_2$ and $Nb_2O_5$ buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [$Nb_2O_5{\mid}SiO_2{\mid}ITO$] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about $340{\Omega}/sq$. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the $Nb_2O_5$ and $SiO_2$ buffer layers.

• Journal of Sensor Science and Technology
• /
• v.27 no.6
• /
• pp.368-373
• /
• 2018

The effects of long-term exposure of high and low humidity on thin-film humidity sensors are investigated. Five commercially available thin-film humidity sensors are initially calibrated in a humidity chamber as a reference before longterm exposure to high and low humidity. Then, the sensors are kept in a high-humidity environment (~95 %rh) for four months. After the exposure, the sensors are calibrated in the same manner as the initial calibration. Consequently, the device reading values from the humidity sensors are elevated up to about 5 %rh. Interestingly, the degree of elevation by the high-humidity exposure shows a negative correlation with the price of the humidity sensors. Humidity sensors are then kept in a low-humidity environment (~10 %rh) for another four months. After the exposure, a calibration similar to the initial calibration is performed. As a result, the device reading from humidity sensors is decreased, indicating a recovery from the effect of high-humidity exposure. The durability test conducted in this study provides experimental evidence for the use of thin-film humidity sensors in high-humidity environments such as greenhouses and food factories for a long period of time.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.165-165
• /
• 2014

In this study, we demonstrated that the soft lithographic patterning processing of chemical vapor deposition (CVD) graphene and rGO sheets as large scale, low cost, high quality and simplicity for future industrial applications. Recently, a previous study has reported that single layer graphene grown via CVD was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp [1]. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide (DMSO) molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface [2]. Further, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or simple and efficient chemical sensor consisting of reduced graphene oxide (rGO) and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated.

• Korean Journal of Materials Research
• /
• v.28 no.1
• /
• pp.32-37
• /
• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2002.10a
• /
• pp.87.1-87
• /
• 2002

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1998.05a
• /
• pp.153-155
• /
• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.460-463
• /
• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.