• 센서학회지
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• 제14권5호
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• 센서학회지
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• 제17권4호
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• pp.267-272
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• 2008

Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the small wireless sensor nodes. As piezoelectric uni-morph cantilever structure can transfer low vibration to large displacement, this structure was commonly deployed to harvest electric energy from vibrations. Through our previous results, when stress was applied on the cantilever, stress was concentrated on the certain point of the ceramic of the cantilever. In this study, for miniaturing the energy harvester, we investigated how the size of ceramics and the stress distribution in ceramic affects energy harvester characteristics. Even though the area of ceramic was 28.6 % decreased from $10{\times}35{\times}0.5mm^3$ to $10{\times}25{\times}0.5mm^3$, both samples showed almost same maximum power of 0.45 mW and the electro-mechanical coupling factor ($K_{31}$) of 14 % as well. This result indicated that should be preferentially considered to generate high power with small size energy harvester.

• 센서학회지
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• 제18권3호
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• pp.234-238
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• 2009

We have investigated the effects of dopant on the thermoelectric properties that $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics fabricated by the conventional solid state reaction method. The Seebeck coefficient of $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics was measured at wide temperature range from 300 K to 673 K. The thermoelectric properties(Seebeck coefficient and electrical resistivity) depend strongly on the kinds of dopants. Sr and Ca dopant decrease the Seebeck coefficient. Density of sintered $La_{0.9}Sr_{0.1}CoO_3$ ceramic at 1523 K was 7.12 $g/cm^2$ and Seebeck coefficient was 35 ${\mu}V/K$ at 663 K. However, the electrical resistivity of the Sr doped sample was low and stable.

• 한국정보통신학회논문지
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• 제4권3호
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• pp.705-711
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• 2000

반도체 제조공정과 미세가공 기술을 이용하여 $300^{\circ}C$의 동작온도에서 약 60 mW의 전력소모를 갖는 산화물 반도체 박막 가스센서 어레이를 제조하였다. 멤브레인의 우수한 열적 절연은 $0.1\mum\; 두께의\; Si_3N_4와\; 1\mum$ 두께의 PSG의 이중 층에 의한 것으로, 각각 LPCVD(저압화학 기상증착)와 APCVD(대기압 화학 기상증착)에 의해 제조되었다. 센서 어레이의 4가지 산화물 반도체 박막 감지물질로는 1 wt.% Pd가 도핑된 $SnO_2,\; 6 we.% A1_2O_3$가 도핑된 ZnO, $WO_3$, ZnO를 이용하였으며,4가지 감지물질의 베이스라인 저항은 $300^{\circ}C$ 에서 3일 동안의 에이징을 거친 후 안정됨을 보였다. 제조된 초소형 산화물 반도체 박막 가스센서 어레이는 여러 가지 가스의 노출 시 유용한 저항 변화를 나타내었으며 감도는 감지 물질에 강하게 의존함을 알 수 있었다.

• 한국재료학회지
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• 제25권7호
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• pp.358-363
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• 2015

We present an excellent detection for nitrogen monoxide (NO) gas using polycrystalline ZnO wire-like films synthesized via a simple method combined with sputtering of Zn metallic films and subsequent thermal oxidation of the sputtered Zn nanowire films in dry air. Structural and morphological characterization revealed that it would be possible to synthesize polycrystalline hexagonal wurtzite ZnO films of a wire-like nanostructure with widths of 100-150 nm and lengths of several microns by controlling the sputtering conditions. It was found from the gas sensing measurements that the ZnO wire-like thin film gas sensor showed a significantly high response, with a maximum value of 29.2 for 2 ppm NO at $200^{\circ}C$, as well as a reversible fast response to NO with a very low detection limit of 50 ppb. In addition, the ZnO wire-like thin film gas sensor also displayed an NO-selective sensing response for NO, $O_2$, $H_2$, $NH_3$, and CO gases. Our results illustrate that polycrystalline ZnO wire-like thin films are potential sensing materials for the fabrication of NO-sensitive high-performance gas sensors.

• 센서학회지
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• 제16권3호
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• 센서학회지
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• 제27권3호
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• pp.182-185
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• 2018

Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobility) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increasing electron mobility has been reported. However, as the heat treatment temperature is relatively high at $500^{\circ}C$, an application where a flexible substrate is absent would be more suitable.

• 센서학회지
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• 제7권4호
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• pp.279-284
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• 1998

수용액에서 자당의 농도 변화를 감지하기 위한 센서개발을 목적으로 하여, 금박막을 센서칩으로 사용한 SPR(surface plasmon resonance) 센서시스템을 구성하였다. 센서칩 제작시 금박막의 특성조건은 SPR 현상에 매우 큰 영향을 미치므로, 센서 제작의 최적화를 위해 특성을 분석하여 두께 약 $545\;{\AA}$, 표면 평균 거칠기 약 $3\;{\AA}$이 되도록 균일하게 제작하였다. 이렇게 제작된 금박막 센서칩의 공명각은 $43.75^{\circ}$ 이었으며, $0{\sim}40\;wt%$ 농도의 자당 수용액을 측정한 결과 기존의 알려진 자당 센서에 비해 빠른 응답특성과 선형적인 공명특성을 얻을 수 있었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.727-730
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• 2003

Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

• 센서학회지
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• 제16권4호
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• pp.319-323
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• 2007

This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC thin film was deposited by APCVD method using only Ar carrier gas and single precursor HMDS at $1100^{\circ}C$. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation. Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and the roughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of the grown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion, high frequency and MEMS applications.