• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.2 no.3
• /
• pp.431-437
• /
• 1998

In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2002.11a
• /
• pp.48-48
• /
• 2002

It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1022-1024
• /
• 1995

In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.4
• /
• pp.157-161
• /
• 2005

Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5${\~}$5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the $E_l,\;E_1+{\Delta}_1$, and $E_2$ critical points. These energies were decreased with increasing thickness of CdTe thin films.

• Journal of the Korean Ceramic Society
• /
• v.31 no.8
• /
• pp.886-892
• /
• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1256_1257
• /
• 2009

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.445-448
• /
• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.420-422
• /
• 1995

PVDF (polyvinylidene fluoride) has at least from known crystalline structure ( ; they are referred to as the $\alpha$, $\beta$, $\gamma$ and $\alpha_p$ phase or forms II, I, III and $IV_p$). In this study, the manufactured PVDF thin films through vapor deposition method had for II ( ; the substrate temperature at 30$^{\circ}C$). The dielectric behavior of poly(vinylidene fluoride) is affected by orientation and crystal modification. The very high value of the dielectric constant for high temperature conditioned film is believed to be due to the orientation effect. The loss peak caused by molecular motion of the molecules in crystalline regions.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.2
• /
• pp.343-348
• /
• 2007

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. Lipid thin films were deposited by accumulation and the current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• Journal of Information Display
• /
• v.11 no.2
• /
• pp.52-56
• /
• 2010

High-efficiency organic light-emitting diodes (OLEDs) based on multilayer transparent electrodes (MTEs) are reported. The dielectric/metal/dielectric (DMD) multilayer electrode based on a thin silver layer achieved high sheet conductance as small as $6{\Omega}/sp$ and a tuning capability in the optical and electrical properties by engineering the inner and outer dielectric layers. In the conventional normal bottom-emitting structure, a DMD-based OLED can be fabricated with 90% higher forward luminous efficiency and 30% higher external quantum efficiency (EQE) compared to ITO-based devices. Special attention was paid to the optimization method of such MTE structure considering both the injection and optical structures.