• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.133-134
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• 2014

• Coupled systems mechanics
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• v.9 no.4
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• pp.381-396
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• 2020

Analytical investigation of the fracture of inhomogeneous beam with two parallel lengthwise cracks is performed. The thickness of the beam varies continuously along the beam length. The beam is loaded in three-point bending. Two beam configurations with different lengths of the cracks are analyzed. The two cracks are located arbitrary along the thickness of the beam. Solutions to the strain energy release rate are derived assuming that the material has non-linear elastic mechanical behavior. Besides, the beam exhibits continuous material inhomogeneity along its thickness. The balance of the energy is analyzed in order to derive the strain energy release rate. Verifications of the solutions are carried-out by considering the complementary strain energy stored in the beam configurations. The influence of the continuous variation of the thickness along the beam length on the lengthwise fracture behavior is investigated. The dependence of the lengthwise fracture on the lengths of the two parallel cracks is also studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.87-91
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• 2013

Carbon-nanotube field-effect transistors (CNFETs) have drawn wide attention as one of the potential substitutes for metal-oxide-semiconductor field-effect transistors (MOSFETs) in the sub-10-nm era. Output characteristics of coaxially gated CNFETs were simulated using FETToy simulator to reveal the dependence of drain current on the nanotube diameter and gate oxide thickness. Nanotube diameter and gate oxide thickness employed in the simulation were 1.5, 3, and 6 nm. Simulation results show that drain current becomes large as the diameter of nanotube increases or insulator thickness decreases, and nanotube diameter affects the drain current more than the insulator thickness. An equation relating drain saturation current with nanotube diameter and insulator thickness is also proposed.

• Journal of the Korean Magnetics Society
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• v.23 no.2
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• pp.37-42
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• 2013

The out-of-plane and in-plane angular dependence of ferromagnetic resonance field was measured in NiFe thin films fabricated by magnetron sputtering. The effective magnetization was obtained from the out-of-plane angular dependence of ferromagnetic resonance field, which was well agreed with calculated one. The decrease of effective magnetization with NiFe thickness was due to the surface anisotropy constant of $K_s=-0.23\;erg/cm^2$. The in-plane uniaxial anisotropy fields were obtained from the in-plane angular dependence of ferromagnetic resonance field. The easy axis of in-plane uniaxial anisotropy field was rotated to the reverse direction of applied magnetic field during sample fabrication, which was explained by the antiferromagnetic NiFeO layer at sample surface.

• Journal of the Korean Magnetics Society
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• v.27 no.1
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• pp.30-34
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• 2017

In this report, we calculated the angular dependence of exchange bias ($H_{ex}$) by using single domain model in exchange coupled ferromagnetic (F)/antiferromagnetic (AF) bilayers, which results with AF thickness ($t_{AF}$) were used for the analysis of measured ones in NiFe/MnIr bilayers. Angular dependence of $H_{ex}$ calculated at $t_{AF}$ > $t_c$ showed typical unidirectional behaviors, however, calculated one at $0.5t_c$ < $t_{AF}$ < $t_c$ showed peculiar angular behaviors by fixed AF spins at specified angle near ${\theta}_H=90^{\circ}$. Angular dependence of $H_{ex}$ measured in NiFe/MnIr (20 nm) bilayers showed typical unidirectional behaviors. However, measured one in NiFe/MnIr (4 nm) bilayers showed mixed behaviors including both of unidirectional and peculiar angular behaviors, which was explained by the grain size distribution of polycrystalline MnIr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.253-256
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• 2014

$Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.7
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• pp.447-452
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• 1987

In this paper, the dependence of piezoelectric properties in the 0-3 composite system of piezoelectric-ceramics polymer materials on particle size of ceramics were investigated. Radial mode and thickness mode of composite were observed similar to single phase of piezoelectric ceramics. The measured values of dielectric constant and dissipation factor were dependent on particle size, which increased with the increasing particle size. the planar coupling factor, thickness coupling factor and thickness frequency constant with the particle size were almost constant, while planar frequency constant increased. The thickness coupling factor decreased with the increasing thickness of specimen. It is found that maximum voltage coeffidient was calculated on the specimen with particle size smallar than 46 ${\mu}m$.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.859-864
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• 1991

High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.255-259
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• 2011

The thickness dependence of magnetic properties was experimentally investigated in nanocrystalline Fe-Hf-N thin films fabricated by a RF magnetron sputtering method. In order to investigate the thickness effect on their magnetic properties, the films are prepared with different thickness ranges from 90 nm to 330 nm. It was revealed that the coercivity of the thin film increased with film thickness. On the contrary, the saturation magnetization decreased with film thickness. On the basis of the SEM and TEM, an amorphous phase forms during initial growth stage and it changes to crystalline structure after heat treatment at $550^{\circ}C$. Nanocrystalline Fe-Hf-N particles are also generated.