• Title/Summary/Keyword: Thickness Uniformity

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Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells (원자층 증착법과 용액 공정법으로 성장한 전자 수송층 산화주석 박막의 페로브스카이트 태양전지 특성)

  • Ki Hyun Kim;Sung Jin Chung;Tae Youl Yang;Jong Chul Lim;Hyo Sik Chang
    • Korean Journal of Materials Research
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    • v.33 no.11
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    • pp.475-481
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    • 2023
  • Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

p-type CuI Thin-Film Transistors through Chemical Vapor Deposition Process (Chemical Vapor Deposition 공정으로 제작한 CuI p-type 박막 트랜지스터)

  • Seungmin Lee;Seong Cheol Jang;Ji-Min Park;Soon-Gil Yoon;Hyun-Suk Kim
    • Korean Journal of Materials Research
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    • v.33 no.11
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    • pp.491-496
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    • 2023
  • As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

A study on Resin Filling Analysis and Experiment by VAP and VaRTM Processes (VaRTM과 VAP 공정의 수지 충진실험 및 해석에 관한 연구)

  • Dong-Hwan Yoon;Kyeong-Ho Seo;Yu-Jung Kwon;Jin-Ho Choi
    • Composites Research
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    • v.36 no.5
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    • pp.310-314
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    • 2023
  • VaRTM(Vacuum assisted resin transfer molding) and VAP(Vacuum assisted process) processes are a type of RTM(Resin transfer molding) process, and are typical out-of-autoclave (OOA) processes that can manufacture large structures at low cost. In this paper, a resin filling test was conducted to compare the VaRTM and VAP processes, and the filling process and dimensional stability were compared. In addition, an analysis method to simulate the filling process was developed, and a dielectric sensor was used to detect the flow front of the resin, which was compared with the analysis results. From the resin filling test, the total filling time of the composite plate was measured to be 48 minutes for the VAP process and 145 minutes for the VaRTM process, and the filling time by the VAP process was reduced by about 67%. In addition, it was confirmed that the VAP process was superior to the VaRTM process in the thickness control ability and uniformity of the composite plate.

Evaluation of Multi-axis Robotic Manufactured Thermoplastic Composite Structure Using Stamp-forming Process (다관절 로봇 암 기반 고속 열 성형 공정을 활용한 열가소성 복합재 부품 평가)

  • Ho-Young Shin;Ji-Sub Noh;Gyu-Beom Park;Chang-Min Seok;Jin-Hwe Kweon;Byeong-Su Kwak;Young-Woo Nam
    • Composites Research
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    • v.36 no.5
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    • pp.321-328
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    • 2023
  • This study developed the in-situ stamp-forming process using the multi-axis robotic arm to fabricate thermal composite parts. Optimal fabrication parameters with the multi-axis robotic arm were determined using finite element analysis and these parameters were further refined through the practical manufacturing process. A comparison between the manufactured parts and finite element analysis results was conducted regarding thickness uniformity and wrinkle distribution to confirm the validity of the finite element analysis. Additionally, to evaluate the formability of the manufactured composite parts, measurements of crystallinity and porosity were taken. Consequently, this study establishes the feasibility of the In-situ stamp-forming consolidation using a robotic arm and verifies the potential for producing composite parts through this process.

Image Analysis Fuzzy System

  • Abdelwahed Motwakel;Adnan Shaout;Anwer Mustafa Hilal;Manar Ahmed Hamza
    • International Journal of Computer Science & Network Security
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    • v.24 no.1
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    • pp.163-177
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    • 2024
  • The fingerprint image quality relies on the clearness of separated ridges by valleys and the uniformity of the separation. The condition of skin still dominate the overall quality of the fingerprint. However, the identification performance of such system is very sensitive to the quality of the captured fingerprint image. Fingerprint image quality analysis and enhancement are useful in improving the performance of fingerprint identification systems. A fuzzy technique is introduced in this paper for both fingerprint image quality analysis and enhancement. First, the quality analysis is performed by extracting four features from a fingerprint image which are the local clarity score (LCS), global clarity score (GCS), ridge_valley thickness ratio (RVTR), and the Global Contrast Factor (GCF). A fuzzy logic technique that uses Mamdani fuzzy rule model is designed. The fuzzy inference system is able to analyse and determinate the fingerprint image type (oily, dry or neutral) based on the extracted feature values and the fuzzy inference rules. The percentages of the test fuzzy inference system for each type is as follow: For dry fingerprint the percentage is 81.33, for oily the percentage is 54.75, and for neutral the percentage is 68.48. Secondly, a fuzzy morphology is applied to enhance the dry and oily fingerprint images. The fuzzy morphology method improves the quality of a fingerprint image, thus improving the performance of the fingerprint identification system significantly. All experimental work which was done for both quality analysis and image enhancement was done using the DB_ITS_2009 database which is a private database collected by the department of electrical engineering, institute of technology Sepuluh Nopember Surabaya, Indonesia. The performance evaluation was done using the Feature Similarity index (FSIM). Where the FSIM is an image quality assessment (IQA) metric, which uses computational models to measure the image quality consistently with subjective evaluations. The new proposed system outperformed the classical system by 900% for the dry fingerprint images and 14% for the oily fingerprint images.

Development of Bonding Dispenser and Press Machine to Regenerate Retainer Ring for Semiconductor CMP Process (반도체 CMP 공정용 리테이너 링 재생을 위한 본딩 디스펜서 및 프레스 머신 개발)

  • Hyoung-Keun Park
    • The Journal of the Korea institute of electronic communication sciences
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    • v.19 no.3
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    • pp.507-514
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    • 2024
  • In the semiconductor manufacturing line, continuous efforts are being made to reduce the cost of products produced, and the demand for this is accelerating in the chemical mechanical polishing(CMP) process, and a representative example of these cost reduction items is the 5-Zone Ring. After about 150 hours of use in the CMP process, the thickness of the ring decreases to less than 1 mm and must be replaced with a new product. Therefore, in this study, bonding dispensers and press machines with a dispensing amount error of 10g±0.8% or less and a pressure uniformity of ±1.8% or less were developed to reduce semiconductor manufacturing costs by repeatedly regenerating worn parts of the retainer ring, and to minimize environmental pollution caused by industrial waste treatment.

A study on CAE and injection molding of automotive thick-walled light guide with micro-optical patterns (마이크로 광학 패턴이 있는 차량용 후육 라이트 가이드의 CAE 및 사출성형에 관한 기초연구)

  • Dong-Won Lee;Jong-Su Kim;Hyeon-Hwa Lee;Sung-Hee Lee
    • Design & Manufacturing
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    • v.17 no.3
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    • pp.8-14
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    • 2023
  • In this study, basic research was conducted on manufacturing technology of thick-walled light guide a component that controls the light source of automobile lamps. As a preliminary study for manufacturing the final injection molded parts, a model for analyzing the influence of micro patterns on light guides is presented. The optical characteristics of the light guide were analyzed according to the change of the curvature radius of the micro-optical pattern, and the injection molding characteristics of the light guide according to the change of injection molding conditions were analytically evaluated. It was confirmed that the luminance uniformity improves as the R value decreases for changes in the micro-pattern R value, but it was confirmed that there are technical limitations in actual injection mold core processing and high-replication injection molding. Injection molding analysis showed that cooling channel design is very important compared to general injection molding due to thick-wall characteristics and thickness variation. It was also confirmed that the cooling channel has a great influence on the cycle time and birefringence result due to residual stress. As a result of analyzing the influence of filling time, holding condition, and cooling on shrinkage, it was found that the cooling water temperature has a significant effect on the shrinkage of ultra-fine light guide parts, and the holding condition also has a significant effect.

Epoxy/BaTiO3 (SrTiO3) composite films and pastes for high dielectric constant and low tolerance embedded capacitors fabrication in organic substrates

  • Paik Kyung-Wook;Hyun Jin-Gul;Lee Sangyong;Jang Kyung-Woon
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2005.09a
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    • pp.201-212
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    • 2005
  • [ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

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Studies on Fabrication and Characteristics of $Al_{0.3}Ga_0.7N/GaN$ Heterojunction Field Effect Transistors for High-Voltage and High-Power Applications (고전압과 고전력 응용을 위한 $Al_{0.3}Ga_0.7N/GaN$ 이종접합 전계효과 트랜지스터의 제작 및 특성에 관한 연구)

  • Kim, Jong-Wook;Lee, Jae-Seung;Kim, Chang-Suk;Jeong, Doo-Chan;Lee, Jae-Hak;Shin, Jin-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.8
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    • pp.13-19
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    • 2001
  • We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

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Temperature Analysis for the Point-Cell Source in the Vapor Deposition Process

  • Park, Jong-Wook;Kim, Sung-Cho;Hun Jung
    • Journal of Mechanical Science and Technology
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    • v.18 no.9
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    • pp.1680-1688
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    • 2004
  • The information indicating device plays an important part in the information times. Recently, the classical CRT (Cathod Ray Tube) display is getting transferred to the LCD (Liquid Crystal Display) one which is a kind of the FPDs (Flat Panel Displays). The OLED (Organic Light Emitting Diodes) display of the FPDs has many advantages for the low power consumption, the luminescence in itself, the light weight, the thin thickness, the wide view angle, the fast response and so on as compared with the LCD one. The OLED has lately attracted considerable attention as the next generation device for the information indicators. And also it has already been applied for the outside panel of a mobile phone, and its demand will be gradually increased in the various fields. It is manufactured by the vapor deposition method in the vacuum state, and the uniformity of thin film on the substrate depends on the temperature distribution in the point-cell source. This paper describes the basic concepts that are obtained to design the point-cell source using the computational temperature analysis. The grids are generated using the module of AUTOHEXA in the ICEM CFD program and the temperature distributions are numerically obtained using the STAR-CD program. The temperature profiles are calculated for four cases, i.e., the charge rate for the source in the crucible, the ratio of diameter to height of the crucible, the ratio of interval to height of the heating bands, and the geometry modification for the basic crucible. As a result, the blowout phenomenon can be shown when the charge rate for the source increases. The temperature variation in the radial direction is decreased as the ratio of diameter to height is decreased and it is suggested that the thin film thickness can be uniformed. In case of using one heating band, the blowout can be shown as the higher temperature distribution in the center part of the source, and the clogging can appear in the top end of the crucible in the lower temperature. The phenomena of both the blowout and the clogging in the modified crucible with the nozzle-diffuser can be prevented because the temperature in the upper part of the crucible is higher than that of other parts and the temperature variation in the radial direction becomes small.