• Journal of Sensor Science and Technology
• /
• v.23 no.5
• /
• pp.337-341
• /
• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.12
• /
• pp.555-559
• /
• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

• Journal of Korean Vacuum Science & Technology
• /
• v.5 no.1
• /
• pp.11-18
• /
• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Journal of the Korean Ceramic Society
• /
• v.33 no.4
• /
• pp.385-390
• /
• 1996

The electrical resistivity of the ceramic glaze coated on ceramic substrate plays an important role on the characteristics of the thick and thin film electrical circuits. In this study the effects of the various modifiers on the electrical resistivity were examined in SiO2-Al2O3-B2O3-RO-Na2O (RO=CaO , SrO, BaO, PbO) glass system. In alkali free glasses where divalent cations are responsible for electrical conduction the electrical conductivity of th glasses increased with the ionic size of divalent cations due to the decrease in the bond strength between oxyben and divalent cation. In Na2O containing glasses however where Na+ ion is responsible for electrical conduction the ionic conductivity decreased with the ionic size of divalent cations because the blocking effect of the cations on Na+ ion movement increased with larger divalent cations. Na+ ionic conduction also depended on the glass structure relaxation due to the corrdination number changes of B2O3 and Al2O3 which varied with the NaO2 content in the glass.

• Progress in Superconductivity and Cryogenics
• /
• v.13 no.4
• /
• pp.22-25
• /
• 2011

A single-coat $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) film of high critical currents ($I_c$) could be successfully fabricated by optimizing the viscosity of the coating solution in the metal-organic deposition (MOD) process. From a Ba-deficient coating solution (Y: Ba: Cu = 1: 1.5: 3) having the viscosity of 212 $mPa{\cdot}sec$, 0.9 ${\mu}m$-thick single coat YBCO film with the $I_c$ value of 289 A/cm-width ($J_c$ = 3.2 MA/$cm^2$) at 77 K was achievable on the $SrTiO_3$ (STO) substrate, which was superior to that of our previous report for 0.8 ${\mu}m$-thick single coat YBCO film from a stoichiometric coating solution (Y: Ba: Cu = 1: 2: 3) on the $LaAlO_3$ (LAO) substrate. This result might be attributed to denser and more homogeneous microstrcuture in the case of the YBCO film from the Ba-deficient coating solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.865-868
• /
• 2002

$SnO_2$ powders were prepare by precipitating $Sn(OH)_4$ from an aqueous solution of $SnCl_4{\cdot}5H_2O$, pH 9.5. The effects of stability and sensitivity of $SnO_2$ thick film sensors added with various amounts, $SiO_2$, $Al_2O_3$, $ZrO_2$, $TiO_2$ have been investigated. It is shown that the 3wt% $Al_2O_3$ or $SiO_2$ can improve the stability of $SnO_2$ gas sensor at an operating temperature of $350^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.174-175
• /
• 2014

We fabricated a Ni/C composite thick film on ${\alpha}-Al_2O_3$ substrate. A number of precipitations were observed on the film surface. Structural characterization was performed on the observed precipitations using transmission electron microscopy (TEM) with help of the elemental mapping, electron diffraction (ED) and ED simulation. The structural characterization revealed that the precipitation is ${\theta}-Al_2O_3$ having the space group of C2/m (Monoclinic).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.9
• /
• pp.812-817
• /
• 2008

A catalytic combustible sensor for LPG/LNG detection was fabricated on $Al_2O_3$ substrate using planar technology. The catalysts of Pd and Pt were added to ${\alpha}$- and ${\gamma}-Al_2O_3$ powders. The mixture of Pt, Pd and $Al_2O_3$ were homogenized by using a three roll mixer. TCR characteristics of Pt heater were optimized with the heat treatment temperature. Sensing properties were investigated as a function of the microstructure of $Al_2O_3$, the gas concentration and the variation of input voltage. ${\alpha}-Al_2O_3$ sintered at 500 $^{\circ}C$ is more suitable as LPG/LNG sensor due to good grain shape and size distribution of about 300 nm than that of ${\gamma}-Al_2O_3$ which is in irregular shape and with a particle size of 5-30 ${\mu}m$. The sensor has shown maximum output voltage of 14 mV for 1000 ppm $C_4H_{10}$ and 3.8 mV for 1000 ppm $CH_4$ at 5.0 V input voltage.

• Korean Journal of Materials Research
• /
• v.8 no.6
• /
• pp.526-531
• /
• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of Sensor Science and Technology
• /
• v.16 no.6
• /
• pp.407-412
• /
• 2007

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.