• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.841-850
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• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.925-928
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• 2011

Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials $Ag(Ta,Nb)O_3$ thick film. In this study, we have fabricated the $Ag(Ta,Nb)O_3$ thick film on the $Al_2O_3$ substrates by screen printing method. The $Ag(Ta,Nb)O_3$ thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150$^{\circ}C$, 2 hr. The electrical properties of $Ag(Ta,Nb)O_3$ thick film were investigated at 30~100$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1322-1326
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• 1999

In2O3 thick film gas sensor for detecting NOx gas of high concentration was fabricated by a screen printing technique. This work focussed on investigation of the change of sensitivity to NOx gas with firing temperatures of sensing layer and on improvement of the sensitivity by adding catalysts such as Al,. Ru, and SnO2 The cross sensitivites of sensor to CO, H2, CH4 and i-C4H10 gases were also examined under NO2 gas concentration of 200ppm Pure In2O3 gas sensor prepared at a firing temperature of 50$0^{\circ}C$ showed a maximum sensitivity to NOx gas at the operating temperature of 40$0^{\circ}C$ Al(0.004 wt%)-In2O3 sensor largely improved the sensitivities to both NO2 and NO gas and showed a superior selectivity compared with other gas sensors.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.328-333
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• 2004

Transparent ZnO:Al conductor films for the optoelectronic devices were deposited by using the capacitively coupled DC magnetron sputtering method. The effect of Al doping concentration and discharge power on the electrical and optical properties of the films was studied. The film resistivity of $8.5${\times}$10^{-4}$ $\Omega$-cm was obtained at the discharge power of 40 W with the ZnO target doped with 2 wt% $Al_2$$_O3$. The transmittance of the 840 nm thick film was 91.7% in the visible waves. Increasing doping concentration of 3 wt% $Al_2$$O_3$ in ZnO target results in significant decrease of film resistivity, which may be due to the formation of $Al_2$$O_3$ particles in the as-deposited ZnO:Al film and the reduced ZnO grain sizes. Increasing DC power from 40 to 60 W increases deposition rate by more than 50%, but can induce high defect density in the film, resulting in higher film resistivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.37-43
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• 1999

Co-firing incompatibility between the low temperature sinterable Glass/ceramic and Ag-thick film was studied. The dielectric material, which has been developed for microwave frequency applications, consists of $SiO_2-TiO_2-Bi_2O_3$-$Bi_2O_3$-RO system(RO:BaO -CaO-SrO) crystallizable glass and $Al_2O_3$as a ceramic filler. The large camber in the sintered specimen and cracks at the Ag-film under the influence of the camber occurred due to the difference of densification rate between the ceramic sheet and the Ag-film $B_2O_3$addition to the Glass/ceramic mixture reduced the severe camber. The cambers decreased with increasing the $B_2O_3$ content, and completely disappeared with 14 vol% $B_2O_3$addition. With additions of $B_2O_3$, $\varepsilon_{r}$ decreased abruptly, Q$\times$f value increased largely and the $\tau_f$ value of the material quickly shifted to positive one.

• Journal of Information Display
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• v.7 no.3
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• pp.27-30
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• 2006

This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.29-36
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• 2000

The effects of additives and fabrication methods of glass frits far thick film paste on durability in acid of glass frits fur thick film paste were studied. To investigate the effect of fabrication method, glass brit based on $PbO-SiO_2-B_2O_3$ was prepared by various mixing method and number of melting. The effects of addition of $ZrO_2$, $Al_2O_3$, and $TiO_2$in glass on the durability in acid solution were investigated.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.33-38
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• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.