• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.83-86
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• 2002

Nanoscopic emission from periodic nano-hole arrays in thick metal films is studied experimentally. The experiments give direct evidence for SP excitations in such structures. We show that the symmetry of the emission is governed by polarization and its shape is defined the interference of SP waves of different diffraction orders. Near-Held pattern analysis combined with the far-Held reflection and transmission measurements suggests that the SP eigenmodes of these arrays may be understood as those of ionic plasmon molecules.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.65-71
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• 2011

Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.1
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• pp.13-18
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• 1997

바인다로서 에폭시 수지와 전도성 금속 충전물로서 은분을 그리고 기타 첨가물을 사용하여 패이스트를 제조하고 전도성 후막을 형성한후 이에대한 열화특성으 연구하였다. 후막의 열화특서은 열과 습도에 대한 내구성 평가로써 250$\pm$5$^{\circ}C$의 solder에 의한 solder dipping test 85$^{\circ}C$~-4$0^{\circ}C$의 cycle을 200회실시하여 저항값의 변화를 관찰하는 heat cycle test 95% 상대습도 및 $65^{\circ}C$에서 500시간동안 유지시키는 humidity resistance test를 실시하 였다. 열화시험후의 전기 저항값의 변화는 페이스트에 사용된 은분의 특성에 의존함을 알수 있었다. 사용된 은분의 입도가 작아질수록 즉 비표면적이 커질수록 열화시험 이전의 저항값 도 컸을뿐 아니라 열화의 정도도 증가함을 알수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1353-1354
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• 2006

The dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) and MgO-doped BST ceramics were investigated for tunable microwave applications by sol-gel method. The effects of MgO mixing with BST. It is observed that Mg substitution into BST causes a shift in the cubic-tetragonal BST Phase transition peak to a lower temperature. MgO-substituted BST and MgO-mixed phases exhibit homogeneous and broadened BST phase transition peaks. Mg substitution into BST has a significant effect on the grain sife reduction. Dielectric constant and loss is inhanced with decrease MgO dopant.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.399-406
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• 2020

Pd nanogap hydrogen sensors were developed using an elastomeric substrate and operated through an on-off mechanism. A 10 nm thick Pd thin film was formed on a polydimethylsiloxane (PDMS) substrate, and 50% of the physical strain was applied in the longitudinal direction to fabricated uniform nanogaps. The initial concentration of the hydrogen gas for the PDMS/Pd films was controlled, and subsequently, the on-off switching response was measured. We found that the average nanogap was less than 50 nm, and the Pd nanogap hydrogen sensors operated over a wide range of temperatures. In particular, the sensors work properly even at a very low temperature of -40℃ with a fast response time of 2 s. In addition, we have investigated the relative humidity and annealing effects.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.691-694
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• 2004

물리적 힘에 의한 초전도 분말의 균일한 표면 확보 및 고밀도화 가 필요하다. 그러나 전기영동전착법의 특성상 물리적 힘에 의한 고밀도화에 어려움이 따르고 전착후막의 기공과 크랙현상을 발생시키는 단점으로 인하여 전기영동전착법에 의한 입자의 고밀도화를 위해서는 전착과정에서 현탁분말입자의 치밀성 및 일정한 방향성을 위한 공정기술이 요구된다. 전기영동법에 의한 초전도 후막의 특성을 향상시키기 위한 방법으로 DC전계인가 와 AC보조전계 인가방식에 공정이 있으며 이들 두 공정에 의해 제작된 후막의 특성을 비교 분석하고 두 공정기술에 따른 최적화 방안을 연구 하였다. YBCO 초전도 후막의 균일한 표면과 초전도특성 향상을 위한 공정개선방법으로는 수직방향 교류전계 인가 방식을 적용한 공정기술을 전기영동전착 공정에 적용하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.113-113
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• 2015

본 연구에서는 thermal evaporation법을 이용하여 제작한 CdTe 후막의 미세구조, 전기적 특성 및 X-선 조사에 따른 특성을 비교분석하였다. 기판온도를 $370{\sim}450^{\circ}C$로 변화시키며 증착하였으며, CdCl2 첨가에 따른 미세구조 변화를 관찰하였다. CdTe 막의 상 하부에 전극을 형성하여 I-V 특성을 평가하고, 실제 X-ray를 샘플에 조사하여 sensitivity를 측정하였다. 박막형성 초기에는 기판온도가 증가함에 따라 grain size가 증가하였지만, grain uniformity는 감소하였다. X-ray 특성향상을 위해서는 grain size와 uniformity 모두 중요한 인자이기 때문에 uniformity 향상을 위해 Cl을 첨가하였다. 미량의 Cl 첨가에서는 큰 변화를 보이지 않았지만 더 많은 양의 Cl 첨가 시, grain size 와 uniformity 모두 증가되는 것을 확인하였으며, 그에 따라 I-V, X-ray 조사 특성 모두 개선되는 것을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.311-312
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• 2007

In this study, composite $BaSrTiO_3$ has been studied for high frequency device applications. Composite $Ba_{0.5}Sr_{0.5}TiO_3$ has high dielectric permittivity and low loss tangent at the relative frequency range from MHz to GHz. 10,30 and 50 wt% of epoxy doped $Ba_{0.5}Sr_{0.5}TiO_3$ powders were prepared with bisphenol A and F polymer employing ball milling process. Epoxy/($BaSrTiO_3$) composites thick films were screen printed on the Cu plated PCB substrates through screen printing methods. The specimens were designed for the embedded capacitor applications. Temperature dependent dielectric permittivity of Epoxy doped $BaSrTiO_3$ ceramics was measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.29-30
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide ($SiO_2$) under both Negative-bias Temperature Instability(NBTI) and Hot-carrier-induced(HCI) stresses using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (1~5 atm.). Statistical parameter variations depend on the stress conditions. We suggest that deuterium bonds in $SiO_2$ film is effective in suppressing the generation of traps related to the energetic hot electrons.