• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.735-738
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• 2003

Downsizing electronics requires precision position control with an accuracy of sub-micron order, which demands development of ultra-fine displacive devices. Piezoelectric transducer is one of devices transferring electric field energy into mechanical energy and being capable for fine displacement control. The transducer has been widely used as fine Position control device Multilayer piezoelectric actuator, one of typical piezo-transducer, is fabricated by stacking alternatively ceramic and electrode layers several hundred times followed by cofiring process. Electrode material should be tolerable in the firing process maintaining at ceramic-sintering temperatures up to $1100{\sim}1300^{\circ}C$. Ag-Pd can be used as stable electrode material in heat treatment above $960^{\circ}C$. Besides, adding small quantity ceramic powder allow the actuator to be fabricated in a good shape by diminishing shrinkage difference between ceramic and electrode layers, resulting in avoidance of crack and delamination at and/or nearby interface between ceramic an electrode layers. This study presents synthesis of nano-oxide-added Ag/Pd powders and its feasibility to candidate material tolerable at high temperature. The powders were formed in a co-precipitation process of Ag and Pd in nano-oxide-dispersed solution where Ag and Pd precursors are melted in $HNO_3$ acid.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.96-110
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• 1995

Traveling-wave electrodes for the high-speed Ti:LiNbO$_{3}$ modulators are designed. For a solution to the problems of 1) phase-velocity mismatching between the optical wave and the Modulating M/W, 2) M/W electrode characteristic impedance mismateching, we assume devices with 1$\mu$m thick SiO$_{2}$ buffer layer between the electrode and the Ti:LiNbO$_{3}$ substrate. The electrode analyses are performed by the FEM using the second-order triangular elements. The optimum design parameters to satisfy the phase-velocity matching and the characteristic impedance matching are sought for. By use of the analyses' results, a Mach-Zehnder optical modulator with a CPW electrode is designed as an example. the band-width estimation is also illustrated.

• Journal of Welding and Joining
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• v.15 no.2
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• pp.89-99
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• 1997

Spot welding is one of the important welding processes for the construction of thin metal sheet. Because of low investment cost, alternating welding current is widely applied for power source. Direct current type could be, however, recommened for high quality weldment. In this study, the effect of welding current type on the weldability and the electrode life in spot welding of aluminium alloy were investigated. Various welding tests were done by using three phase direct and alternating welding current, respectively. In spite of high variation of welding force, weld quality and electrode life with alternating welding current were shown better results than those with direct current for 2mm thick alumininum alloy sheets. This was due to excessive erosion of the positive electrode in direct welding current compared with the negative one. On the contrary to 2mm sheets, the welding parameters of alternating current for 1mm sheets must be carefully selected.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.41-48
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• 1992

The characteristics of traveling-wave electrodes for high-frequency electroptic integrated devices are described from the view point of improvement of phase-matching based on the conformal mapping method. Specific calculations of the characteristic impedance, effective microwave index, and eletrode loss for asymmetric coplanar strip(ACPS) and coplanar waveguide(CPW) electrode structures are presented as a function of the geometric electrode parameters including the electrode thickness and buffer layer thickness. 5-10(x10S0-6Tm) thick Au-ACPS electrodes were successfully fabricated by electroplating and ECR etcher. The improvement of modulation bandwidth can be theoretically observed from the combination of electrode and buffer layer thickness.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.37-44
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• 1995

A coprecipitation method was used for preparing Ca and Pt doped $SnO_{2}$-based material. Crystallite size and specific surface area were investigated by TEM, XRD and BET analysis. $SnO_{2}(Ca)/Pt$ based thick film devices were prepared by a screen printing technique for hydrocarbon gas detecting. Then the electrical and sensing characteristics of devices were investigated. As Ca and Pt addition, the crystal growth of $SnO_{2}$ was suppressed during calcining and sintering, and the sensitivity of $SnO_{2}(Ca)/Pt$ thick film to gas was enhanced. Also any difference in the sensing properties has to be attributed to the Pt and Au electrode. For the 2000 ppm $CH_{4}$, the sensitivity of $SnO_{2}(Ca)/Pt$ thick film devices were about 83% at an operating temperature of $400^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.25 no.1
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• pp.32-41
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• 2022

Various steps in the electrode production process, such as slurry mixing, slurry coating, drying, and calendaring, directly affect the quality and, consequently, mechanical properties and electrochemical performance of electrodes. Herein, a new method of slurry coating is developed: Double-coated electrode. Contrary to single-coated electrode, the cathode is prepared by double coating, wherein each coat is of half the total loading mass of the single-coated electrode. Each coat is dried and calendared. It is found that the double-coated electrode possesses more uniform pore distribution and higher electrode density and allows lesser extent of particle segregation than the single-coated electrode. Consequently, the double-coated electrode exhibits higher adhesion strength (74.7 N m^-1) than the single-coated electrode (57.8 N m^-1). Moreover, the double-coated electrode exhibits lower electric resistance (0.152 Ω cm^-2) than the single-coated electrode (0.177 Ω cm^-2). Compared to the single-coated electrode, the double-coated electrode displays higher electrochemical performance by exhibiting better rate capability, especially at higher C rates, and higher long-term cycling performance. Despite its simplicity, the proposed method allows effective electrode preparation by facilitating high electrochemical performance and is applicable for the large-scale production of high-energy-density electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.615-618
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• 2004

The piezoelectricity and polarization of multilayer ceramic actuators, being designed to stack ceramic layer and electrode layer alternately, were investigated under a consideration of geometry, the thickness ratio of the ceramic layer to electrode layer The actuators were fabricated by tape-casting of $0.42PbTiO_3-0.38PbZrO_3-0.2Pb(Mn_{1/3}Nb_{2/3})O_3$ followed by laminating, burn-out and co-firing process. The actuators of $5\times5mm^2$ in area were formed in a way that $60{\sim}200{\mu}m$ thick ceramics were stacked 10 times alternately with $5{\mu}m$ thick electrode. Increase in polarization and electric field-displacement with increasing thickness ratio of the ceramic/electrode layer and thickness/cross section ratio were attributed to the change of $non-180^{\circ}/180^{\circ}$ domain ratio which was affected by the interlayer internal stress and Poisson ratio of ceramic layer. The piezoelectricity and actuation behaviors were found to be dependent upon the volume ratio (or thickness ratio) of ceramic layer relative to ceramic layer. Concerning with the existence of internal stress, the field-induced polarization and deformation were described in the multilayer actuator.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• Journal of Information Display
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• v.7 no.3
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• pp.27-30
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• 2006

This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.