• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.1883-1889
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• 2013

Although Fe-Si based alloy has lower figure of merit than Si-Ge alloy applied for space probe, its low cost related to abundant raw material, rather simple processing, high temperature resistance and reliability up to $800^{\circ}C$ made it one of the most promising middle temperature thermoelectric generation materials. The effect of particle size and additive on the thermoelectric properties of p-$FeSi_2$ prepared by a RF inductive furnace was investigated. The electrical conductivity increased slightly with decreasing particle size and hence better grain-to-grain connectivity due to the increase of density. The Seebeck coefficient exhibited the maximum value at about 600~800K and decreased slightly with increasing particle size. This must be due to the amount of residual metallic phase ${\varepsilon}$-FeSi. $Fe_2O_3$ and/or $Fe_3O_4$-doped specimens showed the higher electrical conductivity and the lower Seebeck coefficient due to increase of the metallic phase and Si-vacancy. On the other hand, $SiO_2$-doped specimen showed the higher electrical conductivity and the higher Seebeck coefficients.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.83-90
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• 1990

The semiconducting $(Pb_1\;_xSn_x)_1$ $_yTe_y$, one of the low - temperature thermoelectric materials, has been prepared and its chemical composition and nonstoichiometry has been analyzed. The content of Pb in the specimens was determined by the complexometric back - titration method with EDTA and Pb(II) standard solutions. Te - content was analyzed with the redox titration method. The electrical conductivity and the thermoelectric power have also been measured by the DC 4 - probe and the heat-pulse technique, respectively. All of the specimens showed a nonstoichiometric behavior in their chemical compositions (Te excess), thus gave rise to a p - type semiconducting property, and the nonstoichoimetry became bigger as the Sn - content increased. The thermoelectric power vs. temperature results have been analyzed upon the basis of the Fermi level vs. temperature profiles in the saturation regime. The specimen of x=0.1 evolved a transition from p - to n - type property at about 670K, which has been explained by the fact that the mobility of electrons is bigger than that of holes in the temperature range of the intrinsic regime.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.263-263
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• 2009

The microtstructures and properties of alloys in the pseudo-binary $Bi_2Te_3-PbTe$ system were investigated as a first step towards the design of nanostructured materials with enhanced thermoelectric properties. The liquid alloys were cooled by water quenching method. Dendritic and lamellar structures were observed clearly by using environmental scanning electron microscope(eSEM) and electron probe micro analyzer(EPMA) take into account composition ratio between $Bi_2Te_3$ and PbTe. The compound $Pb_2Bi_6Te_{11}$ precipitated as a metastable phase under all conditions. The structure of those samples changed from dendritic to lamellar by increasing $Bi_2Te_3$ ratio of composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.11-11
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• 2010

In order to design for nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system were investigated for their micro structure and thermal properties. For this synthesis the liquid alloys were cooled by water quenching method. The micro structure images were taken by using electron probe micro analyzer (EPMA). Dendritic and lamellar structures were clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. It was confirmed that a metastable compounds is $PbBi_2Te_4$ in the The $Bi_2Te_3$-PbTe system. The change in the composition increasing $Bi_2Te_3$ ratio causes to change structure from dendritic to lamellar. Seebeck coefficient of alloys 5 which the mixture rate of $Bi_2Te_3$ is 83% was measured as the highest value. In contrast, the others decreased by increasing $Bi_2Te_3$. n-type characteristics was observed at all condition except alloy 6 which $Bi_2Te_3$ ration is 91%. The power factors of all samples were calculated with Seebeck coefficient and resistivity. Also the thermal conductivity was measured by using laser flash analyzer (LFA). In this work, the microstructures and thermal properties have been measured as a function of ratio of $Bi_2Te_3$ in the $Bi_2Te_3$-PbTe system.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.