• Title/Summary/Keyword: Thermoelectric coefficient

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Electrical Properties of n-type Co-doped Fe-Si Alloy (Co 첨가 Fe-Si n형 반도체의 전기적 특성)

  • Pai, Chul-Hoon;Kim, Jeung-Gon
    • Korean Journal of Metals and Materials
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    • v.47 no.12
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    • pp.860-865
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    • 2009
  • The effect of Co additive on the electrical properties of Fe-Si alloys prepared by a RF inductive furnace was investigated. The electrical conductivity and Seebeck coefficient were measured as a function of the temperature under an Ar atmosphere to evaluate their applicability to thermoelectric energy conversion. The electrical conductivity of the specimens increased as the temperature increased, showing typical semiconducting behavior. The electrical conductivity of Co-doped specimens was higher than that of undoped specimens and increased slightly as the amount of Co additive increased. This is most likely due to the difference in the carrier concentration and the amount of residual metallic phase ${\varepsilon}$-FeSi (The ${\varepsilon}$-FeSi was detected in spite of an annealing treatment of 100 h at $830^{\circ}C$). Additionally, metallic conduction increased slightly as the amount of Co additive increased. On the other hand, Co-doped specimens showed a lower Seebeck coefficient due to the metallic phase. The power factor of Co-doped specimens was higher than that of undoped specimens. This would be affected more by the electrical conductivity compared to the Seebeck coefficient.

One-dimensional Bi-Te core/shell structure grown by a stress-induced method for the enhanced thermoelectric properties

  • Kang, Joo-Hoon;Ham, Jin-Hee;Lee, Woo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.47-47
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    • 2009
  • The formation of variable one-dimensional structures including core/shell structure is of particular significance with respect to potential applications for thermoelectric devices with the enhanced figure of merit ($ZT=S2{\sigma}T/{\kappa}$). We report the fabrication of Bi-Te core/shell nanowire based on a novel stress induced method. Fig. 1 schematically shows the nanowire fabrication process. Bi nanowires are grown on the Si substrate by the stress-induced method, and then Te is evaporated on the Bi nanowires. Fig. 2 is a transmission electron microscopy image clearly showing a core/shell structure for which effective phonon scattering and quantum confinement effect are expected. Electrical conductivity of the core/shell nanowire was measured at the temperatures from 4K to 300K, respectively. Our results demonstrate that Bi-Te core/shell nanowire can be grown successfully by the stress-induced method. Based on the result of electrical transport measurement and characteristic morphology of rough surface, Seebeck coefficient and thermal conductivity of Bi-Te core/shell nanowires are presented.

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MOCVD of $Bi_2Te_3$-based thermoelectric materials and their material characteristics (MOCVD법으로 성장된 열전재료용 $Bi_2Te_3$ 박막의 특성)

  • Kim, Jeong-Hun;Jung, Yong-Chul;Suh, Sang-Hee;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.13-15
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    • 2005
  • The growth of $Bi_2Te_3$ thin films on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) is discussed in this paper. The results of surface morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The surface morphologies of $Bi_2Te_3$ films were strong1y dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of Te/Bi and deposition temperature. The high Seebeck coefficient (of $-160{\mu}VK^{-1}$) and good surface morphology of our result is promising for $Bi_2Te_3$ based thermoelectric thin film and two dimensional supperlattice device applications.

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Heat Flow and Cooling Performance of an Electronic Refrigerating Kimchi Jar (전자냉동 김치독의 열유동 및 성능 특성)

  • Song, Kyu-Soek;Kim, Kyung-Hwan;Lee, Seung-Chul;Ko, Chul-Kyun;Lee, Jae-Heon;Oh, Myung-Do
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.23 no.7
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    • pp.928-936
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    • 1999
  • The electronic refrigerating kimchi jar operates with a low noise because it contains no compressor but it consumes more energy than that of an refrigerator with compressor. In this paper, the heat flow characteristics and cooling performance of an electronic refrigerating kimchi jar are studied by means of experiments. When the storage temperature is kept in a range of $-5.7^{\circ}C$ to $4.1^{\circ}C$. in the case of three ambient temperatures; $12.7^{\circ}C$, $22.3^{\circ}C$ and $32.2^{\circ}C$, the cooling performance of $20{\ell}$ kimchi jar is investigated. The experiments show that the temperature difference that exists between kimchi jar and its ambient provides a measure of the coefficient of performance of kimchi jar. It is also found that ratio of net pumping heat to the heat pumping rate of thermoelectric module is independent of the temperature difference.

Computer Simulation Study of the Thermoelectric Cooling by Hybrid Method (하이브리드법을 이용한 열전냉각의 수치해석 연구)

  • Kim, N.J.;Lee, J.Y.;Kim, C.B.
    • Solar Energy
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    • v.20 no.1
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    • pp.97-108
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    • 2000
  • The purpose of this study is to minimize the heat transfer surface area and cold fluid exit temperature of heat exchanger which applied to the refrigeration and air-conditioning system by utilizing the thermoelectric principle. Both uniform and non-uniform current distribution methods which applied to the analysis of the TE elements that incorporates heat exchanger were investigated. The non-uniform current distribution method had the better coefficient of performance and had the lower cold fluid exit temperature of the TE cooling system than the uniform current distribution method. It was found that if a TE cooling system incorporates a heat exchanger, a non-uniform current distribution should guarantee to the lowest cold fluid exit temperature. Also, the hybrid method (combination of the uniform and non-uniform current distribution method) is investigated to achieve the best results by combining the uniform and non-uniform current distributions. The results show that it can lower the cold fluid exit temperature and reduce the heat transfer surface area for the parallel flow arrangement if we apply the constant current in some entry region and the non-uniform increasing current in the direction of the cold fluid flow afterwards.

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Correlation between a Structural Change and a Thermoelectric Performance of a Glassy Carbon Thin Film Induced by Electron Beam Irradiation (전자빔 조사에 의한 유리상 탄소에서의 구조적 변화와 열전 성능의 상관관계)

  • Oh, Inseon;Jo, Junhyeon;An, Ki-Seok;Yoo, Jung-woo
    • Composites Research
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    • v.29 no.4
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    • pp.156-160
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    • 2016
  • Glassy carbon can be utilized in a variety of harsh environment due to exceptional thermal stability and chemically impermeability along with scalability and low electrical resistance. In this work, we studied effects of electron(e)-beam irradiation on thermoelectric properties of the glassy carbon film. E-beam irradiation triggered local crystallization and/or amorphization of glassy carbon thin films, which was determined by a Raman spectroscopy. The structural change by e-beam irradiation leads to the change in the doping level of the glassy carbon, which can be inferred from the change of a Seebeck coefficient and an electric conductivity. The optimal power factor we obtained for the irradiated glassy carbon film was ~200% higher than that of the non-irradiated sample.

Thermoelectric characteristics depend on compositions of $Bi_2Te_3$ in mixed alloy with PbTe

  • Jung, Kyoo-Ho;Yim, Ju-Hyuk;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.11-11
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    • 2010
  • In order to design for nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system were investigated for their micro structure and thermal properties. For this synthesis the liquid alloys were cooled by water quenching method. The micro structure images were taken by using electron probe micro analyzer (EPMA). Dendritic and lamellar structures were clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. It was confirmed that a metastable compounds is $PbBi_2Te_4$ in the The $Bi_2Te_3$-PbTe system. The change in the composition increasing $Bi_2Te_3$ ratio causes to change structure from dendritic to lamellar. Seebeck coefficient of alloys 5 which the mixture rate of $Bi_2Te_3$ is 83% was measured as the highest value. In contrast, the others decreased by increasing $Bi_2Te_3$. n-type characteristics was observed at all condition except alloy 6 which $Bi_2Te_3$ ration is 91%. The power factors of all samples were calculated with Seebeck coefficient and resistivity. Also the thermal conductivity was measured by using laser flash analyzer (LFA). In this work, the microstructures and thermal properties have been measured as a function of ratio of $Bi_2Te_3$ in the $Bi_2Te_3$-PbTe system.

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Fabrication of a Micro-thermoelectric Probe (마이크로 프로브 기반 열전 센서 제작 기술)

  • Chang, Won-Seok;Choi, Tae-Youl
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.35 no.11
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    • pp.1133-1137
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    • 2011
  • A novel technique for the fabrication of a glass micropipette-based thermal sensor was developed utilizing inexpensive thermocouple materials. Thermal fluctuation with a resolution of ${\pm}0.002$ K was measured using the fabricated thermal probe. The sensors comprise unleaded low-melting point solder alloy (Sn) as a core metal inside a borosilicate glass pipette coated with a thin film of Ni, creating a thermocouple junction at the tip. The sensor was calibrated using a thermally insulated calibration chamber, the temperature of which can be controlled with a precision of ${\pm}0.1$ K and the thermoelectric power (Seebeck coefficient) of the sensor was recorded from 8.46 to $8.86{\mu}V$/K. The sensor we have produced is both cost-effective and reliable for thermal conductivity measurements of micro-electromechanical systems (MEMS) and biological temperature sensing at the micron level.

Thermoelectric/electrical characterization of electrodeposited BixTey thin films (전기도금법에 의해 전착된 BixTey 박막의 전기 및 열전 특성)

  • Yu, In-Jun;Lee, Gyu-Hwan;Kim, Yang-Do;Im, Jae-Hong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.308-308
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    • 2012
  • Electrodeposition of thermoelectric materials, including binary and ternary compounds, have been attracting attentions, because its many advantages including cost-effectiveness, rapid deposition rate, and ease of control their microstructure and crystallinity by adjusting electrodeposition parameters. In this work, $Bi_xTe_y$ films were potentiostatically electrodeposited using Au/Ni(80/20 nm)/Si substrate as the working electrode in solutions consisting of 10mM $TeO_2$ and 1M $HNO_3$ where $Bi(NO_3)_3$ was varied from 2.5 to 10 mM. Prior to electrodeposition potentiostatically, linear sweep voltammograms (LSV) were acquired with a standard three-electrode cell. The $Bi_xTe_y$ films deposited using the electrolyte containing low Bi ions shows p-type conductivity, which might be attributed by the large incorporation of Te phases. Near stoichiometric $Bi_2Te_3$ thin films were obtained from electrolytes containing 5mM $Bi(NO_3)_3$. This film shows the maximum Seebeck coefficient of $-100.3{\pm}12.7{\mu}V/K$. As the increase of Bi ions in electrolytes decreases the Seebeck coefficient and resistivity. The maximum power factor of $336.2{\mu}W/m{\cdot}K^2$ was obtained from the film deposited using the solution of 7.5mM $Bi(NO_3)_3$.

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Characterization and consolidation of thermoelectric CrSi2 compound prepared by mechanical alloying (MA법으로 제조된 CrSi2 열전화합물의 평가 및 치밀화)

  • Lee, Chung-Hyo;Kim, Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.3
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    • pp.135-141
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    • 2013
  • Mechanical alloying was carried out to produce $CrSi_2$ thermoelectric compound using a mixture of elemental $Cr_{33}Si_{67}$ powders. An optimal milling and heat treatment conditions to obtain the single phase of $CrSi_2$ compound with fine microstructure were investigated by X-ray diffraction and differential scanning calorimetry measurement. $CrSi_2$ intermetallic compound with a grain size of 70 nm could be obtained by MA of $Cr_{33}Si_{67}$ powders for 70 hours and subsequently annealed at $650^{\circ}C$. Consolidation of the MA powders was performed in a spark plasma sintering (SPS) machine using graphite dies at $600{\sim}1000^{\circ}C$ under 60 MPa. The shrinkage of MA samples during SPS consolidation process increased gradually with increasing temperature up to $1000^{\circ}C$ and relatively significant at about $600^{\circ}C$. We tend to believe that these behaviors are deeply related to form a $CrSi_2$ compound during heating process, as can be realized from the DSC measurement. Electrical conductivity and Seebeck coefficient of sintered bodies were measured up to $900^{\circ}C$. Seebeck coefficient and power factor of $Cr_{33}Si_{67}$ compact prepared by MA and SPS at $1000^{\circ}C$ showed the maximum value of $125{\mu}V/K$ at $400^{\circ}C$ and $4.3{\times}10^{-4}W/mK^2$ at $350^{\circ}C$, respectively.