• 제목/요약/키워드: Thermoelectric Energy

검색결과 234건 처리시간 0.023초

녹색도로의 열 에너지 하베스팅을 위한 시스템 개발에 관한 연구 (A Study on the Development of Green Road System for Heat Energy Harvesting)

  • 조병완;이덕희;이동윤;이창섭
    • 한국도로학회논문집
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    • 제13권1호
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    • pp.87-96
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    • 2011
  • 대량의 화석연료 소비로 인한 지구 생태계의 부작용에 따라 전 세계적으로 저탄소와 지속가능한 신재생에너지의 활용이 요구되고 있다. 본 논문에서는 여름철 아스팔트 포장도로에서 발생하는 열에너지를 열전현상을 이용하여 전기에너지로 변환하여 에너지 위기를 새로운 성장의 기회로 전환하려 하였다. 이를 위해 열발전소자의 전기적 특성실험과 아스팔트 포장도로 시험체에 열발전소자 매입 및 열 회수 파이프 매입 실험을 통해 에너지 하베스팅 전력을 측정하여 가장 효과적인 아스팔트 포장도로의 열에너지 하베스팅을 위한 시스템 구축방안을 검토하였으며, 결국 아스팔트 포장도로에서 발생하는 지속가능한 열 에너지원을 활용함과 동시에 환경보존과 경제성장을 도모할 수 있는 신개념의 녹색도로 사회기반시설을 제안하였다.

저온에서 La2/3+xTiO3-δ (x = 0, 0.13)세라믹스의 전자전도특성 (Low-Temperature Electron Transport Properties of La2/3+xTiO3-δ (x = 0, 0.13))

  • 정우환
    • 한국재료학회지
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    • 제24권11호
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    • pp.604-609
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    • 2014
  • The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

운전 온도에 따른 열전발전 모듈의 전기적 내부 저항 변화에 대한 연구 (Study on the Variation of Electrical Internal Resistance for Thermoelectric Generator Module with Operating Temperature)

  • 김윤호;김명기;김서영;리광훈;엄석기
    • 설비공학논문집
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    • 제22권1호
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    • pp.1-12
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    • 2010
  • An analysis model considered the manufacturing factors and the pellet size has been developed in order to predict the performance characteristics of thermoelectric modules as generators. Since the electrical internal resistance has a significant role in the performance of thermoelectric modules, the variations of electrical internal resistance with operating temperature are experimentally measured. The modified electrical internal resistance calculated from an experimental correlation is applied to the analysis model. To verify the modified analysis model, the output voltage, output current and output power are compared with experimental results for the operating temperature conditions of $T_h=85^{\circ}C$ and ${\Delta}T=40^{\circ}C$. The modified analysis shows a good agreement with the experimental results in terms of the output voltage, current, and power.

6H-SiC로부터 제작한 SiC 세라믹스의 열전변환 특성 (Thermoelectric Conversion Characteristics of SiC Ceramics Fabricated from 6H-SiC Powder)

  • 배철훈
    • 한국세라믹학회지
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    • 제27권3호
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    • pp.412-422
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    • 1990
  • Porous SiC ceramics were proposed to be promising materials for high-temperature thermoelectric energy conversion. Throughthe thermoelectric property measurements and microstructure observations on the porous alpha SiC and the mixture of $\alpha$-and $\beta$-SiC, it was experimentally clarified that elimination of stacking faults and twin boundaries by grain growth is effective to increase the seebeck coefficient and increasing content of $\alpha$-SiC gives rise to lower electrical conductivity. Furthermore, the effects of additives on the thermoelectric properties of 6H-SiC ceramics were also studied. The electrical conductivity and the seebeck coefficient were measured at 35$0^{\circ}C$ to 105$0^{\circ}C$ in argon atmospehre. The thermoelectric conversion efficiency of $\alpha$-SiC ceramics was lower than that of $\beta$-SiC ceramics. The phase homogeneity would be needed to improve the seebeck coefficient and electrical conductivity decreased with increasing the content of $\alpha$-phase. In the case of B addition, XRD analysis showed that the phase transformation did not occur during sintering. On the other hand, AlN addiiton enhanced the reverse phase transformation from 6H-SiC to 4H-SiC, and this phenomenon had a great effect upon the electrical conductivity.

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ErAs 나노입자가 첨가된 InGaAlAs 박막의 평면정렬방향으로의 열전특성 (In-Plane Thermoelectric Properties of InGaAlAs Thin Film with Embedded ErAs Nanoparticles)

  • 이영중
    • 한국재료학회지
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    • 제21권8호
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    • pp.456-460
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    • 2011
  • Microelectromechanical systems (MEMS)-fabricated suspended devices were used to measure the in-plane electrical conductivity, Seebeck coefficient, and thermal conductivity of 304 nm and 516 nm thick InGaAlAs films with 0.3% ErAs nanoparticle inclusions by volume. The suspended device allows comprehensive thermoelectric property measurements from a single thin film or nanowire sample. Both thin film samples have identical material compositions and the sole difference is in the sample thickness. The measured Seebeck coefficient, electrical conductivity, and thermal conductivity were all larger in magnitude for the thicker sample. While the relative change in values was dependent on the temperature, the thermal conductivity demonstrated the largest decrease for the thinner sample in the measurement temperature range of 325 K to 425 K. This could be a result of the increased phonon scattering due to the surface defects and included ErAs nanoparticles. Similar to the results from other material systems, the combination of the measured data resulted in higher values of the thermoelectric figure of merit (ZT) for the thinner sample; this result supports the theory that the reduced dimensionality, such as in twodimensional thin films or one-dimensional nanowires, can enhance the thermoelectric figure of merit compared with bulk threedimensional materials. The results strengthen and provide a possible direction in locating and optimizing thermoelectric materials for energy applications.

Strong Correlation Effect by the Rare Earth Substitution on Thermoelectric Material Bi2Te3 ; in GGA+U Approach

  • Quang, Tran Van;Kim, Miyoung
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2013년도 임시총회 및 하계학술연구발표회
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    • pp.19-20
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    • 2013
  • Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

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La2NiO4+δ세라믹스의 유전이완 및 전기전도특성 (Dielectric Relaxation and Electrical Conduction Properties of La2NiO4+δ Ceramics)

  • 정우환
    • 한국재료학회지
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    • 제21권7호
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    • pp.377-383
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    • 2011
  • Thermoelectric power, dc conductivity, and the dielectric relaxation properties of $La_2NiO_{4.03}$ are reported in the temperature range of 77 K - 300 K and in a frequency range of 20 Hz - 1 MHz. Thermoelectric power was positive below 300K. The measured thermoelectric power of $La_2NiO_{4.03}$ decreased linearly with temperature. The dc conductivity showed a temperature variation consistent with the variable range hopping mechanism at low temperatures and the adiabatic polaron hopping mechanism at high temperatures. The low temperature dc conductivity mechanism in $La_2NiO_{4.03}$ was analyzed using Mott's approach. The temperature dependence of thermoelectric power and dc conductivity suggests that the charge carriers responsible for conduction are strongly localized. The relaxation mechanism has been discussed in the frame of the electric modulus and loss spectra. The scaling behavior of the modulus and loss tangent suggests that the relaxation describes the same mechanism at various temperatures. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with activation energy of ~ 0.106eV. At low temperature, variable range hopping and large dielectric relaxation behavior for $La_2NiO_{4.03}$ are consistent with the polaronic nature of the charge carriers.

Optimized Thermoelectric Properties in Zn-doped Zintl Phase Magnesium-Antimonide

  • Rahman, Md. Mahmudur;Ur, Soon-Chul
    • 한국재료학회지
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    • 제32권6호
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    • pp.287-292
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    • 2022
  • Magnesium-antimonide is a well-known zintl phase thermoelectric material with low band gap energy, earth-abundance and characteristic electron-crystal phonon-glass properties. The nominal composition Mg3.8-xZnxSb2 (0.00 ≤ x ≤ 0.02) was synthesized by controlled melting and subsequent vacuum hot pressing method. To investigate phase development and surface morphology during the process, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were carried out. It should be noted that an additional 16 at. % Mg must be added to the system to compensate for Mg loss during the melting process. This study evaluated the thermoelectric properties of the material in terms of Seebeck coefficient, electrical conductivity and thermal conductivity from the low to high temperature regime. The results demonstrated that substituting Zn at Mg sites increased electrical conductivity without significantly affecting the Seebeck coefficient. The maximal dimensionless figure of merit achieved was 0.30 for x = 0.01 at 855 K which is 30% greater than the intrinsic value. Electronic flow properties were also evaluated and discussed to explain the carrier transport mechanism involved in the thermoelectric properties of this alloy system.

Enhancing Electrical Properties of N-type Bismuth Telluride Alloys through Graphene Oxide Incorporation in Extrusion 3D Printing

  • Jinhee Bae;Seungki Jo ;Kyung Tae Kim
    • 한국분말재료학회지
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    • 제30권4호
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    • pp.318-323
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    • 2023
  • The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi2Te3 materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi1.7Sb0.3Te3 (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

열전모듈 냉장고의 에너지 효율에 미치는 설계인자의 영향 (The Effect of Design Parameters on the Energy Efficiency of a TEM Refrigerator)

  • 이태희;김진호
    • 한국지열·수열에너지학회논문집
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    • 제14권3호
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    • pp.29-34
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    • 2018
  • To present the design direction of the thermoelectric module (TEM) refrigerator, analysis of the effect of the design parameters on the energy efficiency and performance of the refrigerator is performed. The design parameters considered are the cooling capacity of the TEM and the heat transfer performance of the heating and cooling surface of the TEM. The heat transfer performance is the most effective design parameter for improving cooling power. The smaller ΔT and cooling capacity of the TEM make the higher efficiency of the refrigerator.