• 한국재료학회지
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• 제29권4호
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• pp.241-251
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• 2019

There are several manufacturing techniques for developing thermionic cathodes for vacuum ultraviolet(VUV) ionizers. The triple alkaline earth metal emitters(Ca-Sr-Ba) are formulated as efficient and reliable thermo-electron sources with a great many different compositions for the ionizing devices. We prepare two basic suspensions with different compositions: calcium, strontium and barium. After evaluating the electron-emitting performance for europium, gadolinium, and yttrium-based cathodes mixed with these suspensions, we selected the yttrium for its better performance. Next, another transition metal indium and a lanthanide metal neodymium salt is introduced to two base emitters. These final composite metal emitters are coated on the tungsten filament and then activated to the oxide cathodes by an intentionally programmed calcination process under an ultra-high vacuum(${\sim}10^{-6}torr$). The performance of electron emission of the cathodes is characterized by their anode currents with respect to the addition of each element, In and Nd, and their concentration of cathodes. Compared to both the base cathodes, the electron emission performance of the cathodes containing indium and neodymium decreases. The anode current of the Nd cathode is more markedly degraded than that with In.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.270-274
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• 1997

The numerical model that can describe the ignition of the pseudospark discharge using hybrid fluid-particle method has been developed. The evolution process of the discharge has been divided into four phases along the potential distribution. After the plasma enters in the hollow cathode, the confining effect which is one of hollow cathode properties occurs and the electron current on anode rises rapidly. As the plasma expands successively, the sheath contracts and as the electric field in the sheath increases, the field-enhanced thermionic emission(Schottky emission) occurs. From numerical results, the physical mechanism that causes the rapid current rise in the ignition of the pseudospark discharge could be identified.

• 전기학회논문지
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• 제58권10호
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• pp.2011-2015
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• 2009

In an insulating dielectric liquid such as transformer oil, space charge injection and propagation were analyzed under the Fowler-Nordheim and Richardson-Dushman's thermal emission charge injection conditions for blade-plane electrodes stressed by a step voltage. The governing equations were composed of all five equations such as the Poisson's equation for electric fields, three continuity equations for electrons, negative, and positive ions, and energy balanced equation for temperature distributions. The governing equations for each carrier, the continuity equations, belong to the hyperbolic-type PDE of which the solution has a step change at the space charge front resulting in numerical instabilities. To decrease these instabilities, the governing equations were solved simultaneously by the Finite Element Method (FEM) employing the artificial diffusion scheme as a stabilization technique. Additionally, the terminal current was calculated by using the generalized energy method which is based on the Poynting's theorem, and represents more reliable and stable approach for evaluating discharge current. To verify the proposed method, the discharge phenomena were successfully applied to the blade~plane electrodes, where the radius of blade cap was $50{\mu}m$.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.708-718
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• 1996

The microstructure and electrical properties of the nonlinear ZnO varistor with A1$_{2}$ $O_{3}$ additions is investigated. The variation of nonlinear behavior with A1$_{2}$ $O_{3}$ additions is indicated from J-E and C-V measurement to be a result of the change of the interface defects density $N_{t}$ at the grain boundaries and the donor concentration $N_{d}$ in the ZnO grains. The optimum composition which has the nonlinear coefficients of -57 was observed in the sample with 0.005wt% A1$_{2}$ $O_{3}$ additions. The conduction mechanism at the pre-breakdown region is consistent with a Schottky thermal emission process obeying a relation given by $J^{\var}$exp[-(.psi.-.betha. $E^{1}$2/)kT] and the conduction process at the breakdown region follows a Fowler-Nordheim tunneling mechanism of the form $J^{\var}$exp(-.gamma./E).

• 한국정보통신학회논문지
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• 제11권5호
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• pp.955-960
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• 2007

본 연구에서는 단채널효과를 감소시키기 위하여 개발되고 있는 이중게이트 MOSFET의 게이트인가 전압에 따른 터널링전류의 변화를 관찰하고자한다. 소자가 나노단위까지 스케일링되면서 터널링전류는 매우 중요한 전류요소가 되었으며 특히 차단전류를 구성하고 있는 열방사전류와 비교하면 소자의 크기가 미세해질수록 급격히 증가하는 특성을 보이고 있다. 이를 감소시키기 위한 연구가 활발히 진행되고 있으며 본 연구에서는 이에 부응하기 위하여 게이트 인가전압에 따른 터널링전류의 변화를 고찰할 것이다. 게이트전압에 대한 터널링전류 변화를 관찰하기 위하여 전위분포함수를 유도하였으며 전위분포함수와 터널링확률의 관계로부터 차단전류변화를 유도하였다. 이와같이 유도한 전류는 열방사전류와 비교되었으며 터널링전류 감소를 위한 유효게이트전압에 대한 관계를 유도하였다.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.44-46
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• 2001

Increase of gate leakage current causes decrease of gain and increase of noise. In this paper, gate leakage current of GaAs MESEFTs' has been traced with different temperatures from $27^{\circ}C\;to\;350^{\circ}C$ to obtain the zero voltage saturation current $J_s$ which is critical to the temperature dependency of total current. From the results, thermal leakage current coefficient has been proposed to compensate for the total current due to the thermionic emission, tunneling, generation and/or hole injection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.50-53
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• 2001

In this study, gate leakage current mechanism has been analyzed for GaAs MESFET with different temperatures ranging from 27$^{\circ}C$ to 300$^{\circ}C$ . It is expected that the thermionic and field emission at the MS contact will dominate the current flow. Thermal cycle is applied to test the reliability of the device. From the results, it is proved that thermal stress gradually increases the gate leakage current at the same bias conditions and leads to the breakdown and failure mechanism which is critical in the field equipment. Finally the gate contact under the repeated thermal shock has been tested to check the quality of Schottky barrier and the current will be expressed in the analytical from to associate with the electrical characteristics of the device.

• 한국재료학회지
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• 제15권2호
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• 한국공작기계학회논문집
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• 제16권5호
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• pp.140-144
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• 2007

As an electron scanning microscopes has traditionally required a considerably large room equipped with several service and pipe lines due to its inherent size. As an alternative, a small sized SEM, simply called a mini-SEM, is introduced even if the performance in terms of magnification and resolution is a little inferior to a classical thermal SEM. However, the size and fabrication cost is dramatically reduced, dedicating to opening a new market. The optical system in the mini-SEM is redesigned and specimen stage is quitely reduced and vertical axis is excluded. The design tools and calibration techniques to develope the mini-SEM are introduced and its performance is verified through numerical analysis experiments.