• Title/Summary/Keyword: Thermal shock parameters

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Ag Sintering Die Attach Technology for Wide-bandgap Power Semiconductor Packaging (Wide-bandgap 전력반도체 패키징을 위한 Ag 소결 다이접합 기술)

  • Min-Su Kim;Dongjin Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.1
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    • pp.1-16
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    • 2023
  • Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.