• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1641-1647
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• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.105-110
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• 2001

It has recently been raised main issue how solve the problem of insufficient energy. One of the solution is to increase the thermal efficiency of power generation system. For the purpose of high efficiency, it is necessary to increase the steam temperature and pressure. So, the use of modified $9{\sim}12%Cr$ steel having superior creep rupture strength and oxidation resistance is required to endure such severe environment. The evaluation of creep properties of those heat resistance material is very important to secure the reliability of high temperature and pressure structural components. Since creep properties are determined by microstructural change such as carbide precipitation and coarsening, It is certain that there are some relationship between creep properties and hardness affected by microstructure. In this study, SP-Creep ruptured test for newly developed 9Cr steel being used as boiler valve material was performed, and creep properties of the material were evaluated. Also, hardness test were performed and hardness results were related to the creep properties such as LMP and creep strength to verify the availability of SP-Creep test as creep test method.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.1
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• pp.50-57
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• 2010

Stepwise production of syn-gas and hydrogen from methane on ferrite based media added with yttria-stabilized zirconia (YSZ) was carried out using a fixed bed infrared reactor. In this study, all M-ferrite (M=Co, Cu, Mn and Ni) media were prepared by co-precipitation method, and there the YSZ was added as a binder to improve thermal stability, reactivity, and resistance against carbon deposition. Most of the ferrite media containing YSZ showed the good redox property for temperature programmed reduction/oxidation (TPR/O) tests. Notably, the Cu-substituted ferrite medium with YSZ showed the great resistance against carbon deposition as well as the good reactivity for the stepwise production of syngas and hydrogen. Furthermore, it also showed the good durability without significant deactivation during five repeated cyclic tests.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.255-262
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• 1994

Arc melted Ti-5Bi alloy was oxidized by thermal oxidation method. In the present study free energy efficiency(${\eta}_e$) of titanium oxide electrode(TOE) was measured as a function of light intensity and light energy. Flat-band potential of TOE was measured as a function of the light intensity and the solution pH. The ${\eta}_e$ of TOE increased with the increase of light intensity and tight energy to maximum value of 3.2% and 13%, respectively, at $0.2W/cm^2$ and 4.0eV. The ${\eta}_e$ was strongly dependent on the magnitude of the bias voltage. Maximum value was found at 0.5V bias. Photocurrent of TOE was controlled by electron-hole pair generation in depletion layer. The flat-band potential of the illuminated TOE shifted to -0.065V/decade with increasing light intensity. With the decrease of pH of electrolyte, flat-band potential shifted to anodic direction. The experimental slope was in good agreement with the Nernstian value of 0.059V/pH decade.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.655-660
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• 2013

Photoelectrochemical cells have been used in photolysis of water to generate hydrogen as a clean energy source. A high efficiency electrode for photoelectrochemical cell systems was realized using a ZnO hierarchical nanostructure. A ZnO nanofiber mat structure was fabricated by electrospinning of Zn solution on the substrate, followed by oxidation; on this substrate, hydrothermal synthesis of ZnO nanorods on the ZnO nanofibers was carried out to form a ZnO hierarchical structure. The thickness of the nanofiber mat and the thermal annealing temperature were determined as the parameters for optimization. The morphology of the structures was examined by field-emission scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The performance of the ZnO nanofiber mat and the potential of the ZnO hierarchical structures as photoelectrochemical cell electrodes were evaluated by measurement of the photoelectron conversion efficiencies under UV light. The highest photoconversion efficiency observed was 63 % with a ZnO hierarchical structure annealed at $400^{\circ}C$ in air. The morphology and the crystalline quality of the electrode materials greatly influenced the electrode performance. Therefore, the combination of the two fabrication methods, electrospinning and hydrothermal synthesis, was successfully applied to fabricate a high performance photoelectrochemical cell electrode.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1000-1007
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• 2001

In an evacuated tube solar collector, the stable sealing of the heat pipe to the glass tube is important for the collector to use for a long period of time. The sealing of copper tube to the glass is quite difficult because of the large differences in the physical and chemical properties of the two materials. In this study, therefore, a proper copper oxide layer was induced to improve the chemical bonding of the two materials, and the oxidation state of copper and the interface between copper and glass were examined by XRD, SEM and EDS. Its bonding strength was also measured. Cu$_2$O was formed when the bare copper was heat-treated under 600$^{\circ}C$, while CuO oxide layer was formed above that temperature. The bonding state of CuO to the copper was very poor. The borate treatment of the copper, however, extend the stable forming of Cu$_2$O layer to 800$^{\circ}C$. Borosilicate glass tube was sealed to a copper tube by Housekeeper method only when the sealing part was covered with Cu$_2$O layer. The bonding strength at the interface was measured 354.4N, its thermal shock resistance was acceptable.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.

• Polymer(Korea)
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• v.35 no.6
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• pp.565-573
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• 2011

The nanocomposites containing graphene oxide (GO) were prepared in order to improve the mechanical properties of poly(methyl methacrylate)/aluminum hydroxide (PMMA/AH) composites. GO was prepared from graphite by oxidation of Hummers method followed by exfoliation with thermal treatment. The surface of GO was modified by oxygen plasma in various exposure times from 0 to 70 min to improve interfacial compatibility. Compared with PMMA/AH composites, the nanocomposites containing GO modified with oxygen plasma for the exposure time up to 50 min showed significant increases in flexural strength, flexural modulus, Rockwell hardness, Barcol hardness, and Izod impact strength. The morphology of fracture surface showed an improved interfacial adhesion between PMMA/AH composites and GO, which was properly treated with oxygen plasma. The mechanical properties of nanocomposites were deteriorated by increasing the content of GO above 0.07 phr due to the nonuniform dispersion of GO.