• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.32-36
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• 2021

This study was investigated in carbon diffusion behavior of laser-carburized TiZrN coating layer and the changes of mechanical properties. The carbon paste was deposited on TiZrN coatings, and the laser was irradiated to carburize into the coatings. The XRD peak corresponding to the (111) plane shifted to a lower angle after the carburization, showing the lattice expansion by doped carbon. The decreased grain size implied the compression by the grain boundary diffusion of carbon. The XPS spectra for the bonding states of carbon was analyzed that carbon was substitute to nitrogen atoms in TiZrN, as carbide, through the thermal energy of laser. In addition, the combination of sp2 and sp3 hybridized bonds represented the formation of an amorphous carbon. The cross-sectional TEM image and the inverse FFT of the TiZrN coating after carburizing were observed as the wavy shape, confirming the amorphous phase located in grain boundaries. After the carburization, the hardness increased from 34.57 GPa to 38.24 GPa, and the friction coefficient decreased by 83 %. In particular, the ratio of hardness and elastic modulus (H/E) which is used as an index of the elastic recovery, increased from 0.11 to 0.15 and the wear rate improved by 65 %.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.4 no.2
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• pp.117-131
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• 2006

A coupled T-H-M(Thermo-Hydro-Mechanical) analysis was carried out for KENTEX (KAERI Engineering-scale T-H-M Experiment for Engineered Barrier System), which is a facility for validating the coupled T-H-M behavior in the engineered barrier system of the Korean reference HLW(high-level waste) disposal system. The changes of temperature, water saturation, and stress were estimated based on the coupled T-H-M analysis, and the influence of the types of mechanical constitutive material laws was investigated by using elastic model, poroelastic model, and poroelastic-plastic model. The analysis was done using ABAQUS, which is a commercial finite element code for general purposes. From the analysis, it was observed that the temperature in the bentonite increased sharply for a couple of days after heating the heater and then slowly increased to a constant value. The temperatures at all locations were nearly at a steady state after about 37.5 days. In the steady state, the temperature was maintained at $90^{\circ}C$ at the interface between the heater and the bentonite and at about $70^{\circ}C$ at the interface between the bentonite and the confining cylinder. The variation of the water saturation with time in bentonite was almost same independent of the material laws used in the coupled T-H-M processes. By comparing the saturation change of T-H-M and that of H-M(Hydro-Mechanical) processes using elastic and poroelastic material mod31 respectively, it was found that the degree of saturation near the heater from T-H-M calculation was higher than that from the coupled H-M calculation mainly because of the thermal flux, which seemed to speed up the saturation. The stresses in three cases with different material laws were increased with time. By comparing the stress change in H-M calculation using poroelasetic and poroelasetic-plastic model, it was possible to conclude that the influence of saturation on the stress change is higher than the influence of temperature. It is, therefore, recommended to use a material law, which can model the elastic-plastic behavior of buffer, since the coupled T-H-M processes in buffer is affected by the variation of void ratio, thermal expansion, as well as swelling pressure.

• Journal of Korea Foundry Society
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• v.37 no.6
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• pp.207-216
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• 2017

This study investigated the effects of the addition of Zn, Ca, and SiC on the microstructure and mechanical properties of Mg-Al alloys. The tensile properties of homogenized Mg-xAl (x = 6, 7, 8, and 9 wt.%) alloys increased with increasing Zn content by the solid-solution strengthening effect. However, when the added Zn content exceeded the solubility limit, the strength and ductility of the alloys decreased greatly owing to premature fracture caused by undissolved coarse particles or local melting. Among the Mg-xAl-yZn alloys tested in this study, the AZ74 alloy showed the best tensile properties. However, from the viewpoints of the thermal stability, castability, and tensile properties, the AZ92 alloy was deemed to be the most suitable cast alloy. Moreover, the addition of a small amount (0.17 wt.%) of SiC reduced the average grain size of the AZ91 alloy significantly, from $430{\mu}m$ to $73{\mu}m$. As a result, both the strength and the elongation of the AZ91 alloy increased considerably by the grain-boundary hardening effect and the suppression of twinning behavior, respectively. On the other hand, the addition of Ca (0.5-1.5 wt.%) and a combined addition of Ca (0.5-1.5 wt.%) and SiC (0.17 wt.%) increased the average grain size of the AZ91 alloy, which resulted in a decrease in its tensile properties. The SiC-added AZ92 alloy exhibited excellent tensile properties (YS 125 MPa, UTS 282 MPa, and EL 12.3%), which were much higher than those of commercial AZ91 alloy (YS 93 MPa, UTS 192 MPa, and EL 7.0%). The fluidity of the SiC-added AZ92 alloy was slightly lower than that of the AZ91 alloy because of the expansion of the solid-liquid coexistence region in the former. However, the SiC-added AZ92 alloy showed better hot-tearing resistance than the AZ91 alloy owing to its refined grain structure.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.3
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• pp.275-282
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• 2014

Particle-reinforced metal matrix composites exhibit a strengthening effect due to the particle size-dependent length scale that arises from the strain gradient, and thus from the geometrically necessary dislocations between the particles and matrix that result from their CTE(Coefficient of Thermal Expansion) and elastic-plastic mismatches. In this study, the influence of the size-dependent length scale on the particle-matrix interface failure and ductile failure in the matrix was examined using finite-element punch zone modeling whereby an augmented strength was assigned around the particle. The failure behavior was observed by a parametric study, while varying the interface failure properties such as the interface strength and debonding energy with different particle sizes and volume fractions. It is shown that the two failure modes (interface failure and ductile failure in the matrix) interact with each other and are closely related to the particle size-dependent length scale; in other words, the composite with the smaller particles, which is surrounded by a denser dislocation than that with the larger particles, retards the initiation and growth of the interface and matrix failures, and also leads to a smaller amount of decrease in the flow stress during failure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.37-43
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• 2013

Conductivity of LSGMC materials were affected by secondary phase segregation, composition and synthetic route. $La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.1}Co_{0.1}O_{3-{\delta}}$ (LSGMC) powders were prepared using the glycine nitrate process to produce high surface area and compositionally homogeneous powders. The powders were synthesized with different 0.5, 1, 1.5, 2, 2.5 of glycine/cation molar ratios. A single perovskite phase from the synthesized powders was characterized with X-ray diffraction patterns. The obtained sintered pellets showed the dense grain microstructure. In case of 1.5 molar ratio, its density was higher than the others. The electrical conductivity measured at $800^{\circ}C$ was observed to be 0.131 $Scm^{-1}$. In addition, the linear thermal expansion behavior was indicated between $25^{\circ}C$ and $800^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.2
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• pp.187-194
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• 2012

The strength of particle-reinforced metal matrix composites is, in general, known to be increased by the geometrically necessary dislocations punched around a particle that form during cooling after consolidation because of coefficient of thermal expansion (CTE) mismatch between the particle and the matrix. An additional strength increase may also be observed, since another type of geometrically necessary dislocation can be formed during extensive deformation as a result of the strain gradient plasticity due to the elastic-plastic mismatch between the particle and the matrix. In this paper, the magnitudes of these two types of dislocations are calculated based on the dislocation plasticity. The dislocations are then converted to the respective strengths and allocated hierarchically to the matrix around the particle in the axisymmetric finite-element unit cell model. The proposed method is shown to be very effective by performing finite-element strength analysis of $SiC_p$/Al2124-T4 composites that included ductile failure in the matrix and particlematrix decohesion. The predicted results for different particle sizes and volume fractions show that the length scale effect of the particle size obviously affects the strength and failure behavior of the particle-reinforced metal matrix composites.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.415-421
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• 2000

The effect of silica binder content on the mechanical properties of zircon shell mold was investigated. Content of binder silica sol to refractory powder in weight[$R_W$] was adjusted from 0.18 to 0.43. Sintering of the shell mold was carried out in the temperature range of $871^{\circ}C$ to $1400^{\circ}C$. Green strength of the shell mold at room temperature increased with increasing $R_W$ and sintering temperature up to $1300^{\circ}C$. However, the mold with $R_W$ of 0.43 that sintered at $1400^{\circ}C$ for 3 hours showed relatively low strength and large level of porosity. The mechanical behavior of the shells is supposed to attributed to the difference in thermal expansion coefficient between refractory powder and binder silica. The optimum value of $R_W$ for zircon-based shell molds was found to be 0.33.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.