• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.597-601
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• 2013

The accelerated thermal aging of a CSPE were carried out for 0, 80.82, 161.63 days at $100^{\circ}C$, which are equal to 0, 40 and 80 years of aging at $50^{\circ}C$, respectively. The volume electrical resistivities of the seawater and freshwater flooding were measured through 3-terminal circuit diagram. The volume electrical resistivities of the 0y, 40y and 80y were $2.454{\times}10^{13}{\sim}1.377{\times}10^{14}{\Omega}{\cdot}cm$, $1.121{\times}10^{13}{\sim}7.529{\times}10^{13}{\Omega}{\cdot}cm$ and $1.284{\times}10^{13}{\sim}8.974{\times}10^{13}{\Omega}{\cdot}cm$ at room temperature, respectively. The dielectric constant of the 0y, 40y and 80y were 2.922~3.431, 2.613~3.285 and 2.921~3.332 at room temperature, respectively. It is certain that the ionic ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) conduction current was formed by the salinity of the seawater. The volume electrical resistivity of the cleaned CSPE via freshwater trends slightly upward with the number of dried days at room temperature. As a result, the $CH_2$ component of thermally accelerated aged CSPE decreased after seawater and freshwater flooding for 5 days respectively, whereas the atoms such as Cl, O, Pb, Al, Si, Sb, S related with the conducting ion ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) component increased relatively.

• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.495-501
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• 2016

Mineral oil has been widely used as an insulating oil for electrical transformers for a long time, but the necessity of employing new insulation oil such as vegetable oil has been increased due to urgent needs for the biodegradability when it leaks and also for the thermal stability at a higher operation temperature. Although specific periods are required between the production and consumption, there are still short of the data to prove the insulation oils' storage stability depending upon various circumstances and their resources. Thus, this paper demonstrates the insulation oils' oxidation characteristics of both mineral and vegetable oils when each was exposed to different environments for 12 weeks. From this test, some properties including total acid number, water content and dielectric breakdown were changed under specific conditions and resources. Vegetable oils showed higher hydrophilicity and water saturation than those of mineral oils due to their molecular compositions. Under sunlight exposure condition, all insulation oils oxidized and changed their properties when exposing to the direct light, regardless of the resource used.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.1-9
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• 2024

This paper addresses the significance of Cu/Polymer Hybrid Bonding technology in the advancement of semiconductor packaging. As the demands of the AI era increase, the semiconductor industry is exploring heterogeneous integration packaging technologies to achieve high I/O counts, low power consumption, efficient heat dissipation, multifunctionality, and miniaturization. The conventional Cu/SiO₂ Hybrid Bonding structure faces limitations such as achieving compatibility with CMP processes to attain surface roughness below 1nm and the occurrence of bonding defects due to particles. However, Cu/Polymer Hybrid Bonding technology, utilizing polymers, is gaining attention as a promising alternative to overcome these challenges. This study focuses on the deposition, patterning, and material properties of polymers essential for Cu/Polymer Hybrid Bonding, highlighting the advantages and potential applications of this technology compared to existing methods. Specifically, the use of polymers with low glass transition temperatures (Tg) is discussed for their benefits in low-temperature bonding processes and improved mechanical properties due to their high coefficients of thermal expansion. Furthermore, the study explores surface property modifications of polymers and the enhancement of bonding mechanisms through plasma treatment. This research emphasizes that Cu/Polymer Hybrid Bonding technology can serve as a critical breakthrough in developing high-performance, low-power semiconductor devices within the industry.

• Journal of the Korean Chemical Society
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• v.12 no.2
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• pp.65-80
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• 1968

The physico-chemical properties of nine selected thallium borosilicate glasses and other 21 supplementary compositions were investigated. Their composition-property curves are found to be in many respects analogous to those of other borosilicate glasses containing lithia, soda, and lead oxide. It is indicated that certain minima found in the composition-property curves of thallium borosilicate glasses might be caused by a change in boron coordination as has been observed to occur in the $Na_2O-B_2O_3-SiO_2$ glasses. Typical effects of thallium ions on the borosilicate glass are summarized as follows: 1) Addition of thallium ions increased density, refractive index, water solubility, linear coefficient of thermal expansion, and dielectric constant. 2) Increased concentration of thallium decreased the softening point of the glasses, caused fluorescence under ultraviolet radiation and smeared out the absorption edges up to $15{\mu}$ in the infrared region. An extensive liquid immiscibility was found by replication electron microscope technique in the $Tl_2O-B_2O_3-SiO_2$ system. The immiscibility covers a composition range roughly from 55 wt. % Tl2O to the binary system $B_2O_3-SiO_2.$ By acid treatment, it was found that the immiscible glass consists of separate silica-rich and boron-rich phases.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.1014-1019
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• 1999

Copolyamic acid PMDA/6FDA-PDA(PAA) and homopolyamic acids PMDA-PDA(PAA) and 6FDA-PDA(PAA) were synthesized from 1,2,4,5-benzenetetracarboxylic dianhydride(PMDA) and 2,2'-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride(6FDA) as the dianhydride and 1,4-phenylenediamine (PDA) as the diamine. Residual stresses were detected in-situ during thermal imidization of the co- and homopolyimide precursors as a function of processing temperature over the range of $25{\sim}400^{\circ}C$ using thin film stress analyzer(TFSA), and morphological structures were investigated by WAXD. In comparison, the resultant residual stress of polyimide films composed of different compositions decreased with the increasing content of PMDA unit in the chain and was about 5 Mpa in compression mode for PMDA-PDA. In this study, the synthesis of random PMDA/6FDA-PDA copolyimide could be completed and compensate for the difficulty of process due to high $T_g$ of PMDA-PDA and relatively higher stress of 6FDA-PDA. It showed that we can make a low level stress copolyimied having excellent mechanical properties by incorporating appropriate rod-like rigid structure PMDA-PDA unit into 6FDA-PDA polyimide backbone which generally shows higher stress due to rotational hinges such as bulky di(trifluoromethyl). Specially, PMDA/6FDA-PDA(0.9:0.1:1.0) satisfied excellent mechanical property and low level stress as an inter layer showing low dielectric constant.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3252-3260
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• 2012

2,2'-Bipyridinium chlorochromate[$C_{10}H_8N_2HCrO_3Cl$] was synthesized by the reaction of 2,2'- bipyridine with chromium(VI) trioxide in 6M HCl. The structure was characterized by IR and ICP analysis. The oxidation of benzyl alcohol using 2,2'-bipyridinium chlorochromate in various solvents showed that the reactivity increased with the increase in the order of the dielectric constant(${\varepsilon}$), in the order: cyclohexene< chloroform$p-CH_3$, H, m-Br, $m-NO_2$) in N,N'-dimethylformamide. Electron-donating substituents accelerated the reaction, whereas electron acceptor groups retarded the reaction. The Hammett reaction constant(${\rho}$) was -0.64(303K). The oxidation reactivity of alcohols can be a useful factor to study about physical properties such as thermal stability, when the polysilsesquioxane solution is ready for an applying coating agent. The observed experimental data was used to rationalized the hydride ion transfer in the rate-determining step.