• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.303-310
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• 2008

We fabricated hydrogenated amorphous silicon(a-Si:H) 140 nm thick film on a $180\;nm-SiO_2/Si$ substrate with an inductively-coupled plasma chemical vapor deposition(ICP-CVD) equipment at $250^{\circ}C$. Moreover, 30 nm-Ni film was deposited with a thermal-evaporator sequently. Then the film stack was annealed to induce silicides by a rapid thermal annealer(RTA) at $200{\sim}500^{\circ}C$ in every $50^{\circ}C$ for 30 minuets. We employed a four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), and scanning probe microscope(SPM) in order to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure evolution, and surface roughness, respectively. We confirmed that nano-thick high resistive $Ni_3Si$, mid-resistive $Ni_2Si$, and low resistive NiSi phases were stable at the temperature of <300, $350{\sim}450^{\circ}C$, and >$450^{\circ}C$, respectively. Through SPM analysis, we confirmed the surface roughness of nickel silicide was below 12 nm, which implied that it was superior over employing the glass and polymer substrates.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.1
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• pp.37-44
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• 2016

Optical fiber temperature sensing systems have incomparable advantages over traditional electrical-cable-based monitoring systems. However, the fiber optic interrogators and sensors have often been rejected as a temperature monitoring technology in real-world industrial applications because of high cost and over-specification. This study proposes a multiplexed fiber optic temperature monitoring sensor system using an economical Optical Time-Domain Reflectometer (OTDR) and Hard-Polymer-Clad Fiber (HPCF). HPCF is a special optical fiber in which a hard polymer cladding made of fluoroacrylate acts as a protective coating for an inner silica core. An OTDR is an optical loss measurement system that provides optical loss and event distance measurement in real time. A temperature sensor array with the five sensor nodes at 10-m interval was economically and quickly made by locally stripping HPCF clad through photo-thermal and photo-chemical processes using a continuous/pulse hybrid-mode laser. The exposed cores created backscattering signals in the OTDR attenuation trace. It was demonstrated that the backscattering peaks were independently sensitive to temperature variation. Since the 1.5-mm-long exposed core showed a 5-m-wide backscattering peak, the OTDR with a spatial resolution of 40 mm allows for making a sensor node at every 5 m for independent multiplexing. The performance of the sensor node included an operating range of up to $120^{\circ}C$, a resolution of $0.59^{\circ}C$, and a temperature sensitivity of $-0.00967dB/^{\circ}C$. Temperature monitoring errors in the environment tests stood at $0.76^{\circ}C$ and $0.36^{\circ}C$ under the temperature variation of the unstrapped fiber region and the vibration of the sensor node. The small sensitivities to the environment and the economic feasibility of the highly multiplexed HPCF temperature monitoring sensor system will be important advantages for use as system-integrated temperature sensors.

• Proceedings of the KSRS Conference
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• 2004.10a
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• pp.512-514
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• 2004

The Electro-Optical Camera (EOC) is a high spatial resolution, visible imaging sensor which collects visible image data of the earth's sunlit surface and is the primary payload on KOMPSAT-l. The purpose of the EOC payload is to provide high resolution visible imagery data to support cartography of the Korean Peninsula. The EOC is a push broom-scanned sensor which incorporates a single nadir looking telescope. At the nominal altitude of 685Km with the spacecraft in a nadir pointing attitude, the EOC collects data with a ground sample distance of approximately 6.6 meters and a swath width of around 17Km. The EOC is designed to operate with a duty cycle of up to 2 minutes (contiguous) per orbit over the mission lifetime of 3 years with the functions of programmable gain/offset. The EOC has no pointing mechanism of its own. EOC pointing is accomplished by right and left rolling of the spacecraft, as needed. Under nominal operating conditions, the spacecraft can be rolled to an angle in the range from +/- 15 to 30 degrees to support the collection of stereo data. In this paper, the status of EOC such as temperature, dark calibration, cover operation and thermal control is checked and analyzed by continuously monitored state of health (SOH) data and image data during the mission life of 3 years. The aliveness of EOC and operation continuation beyond mission life is confirmed by the results of the analysis.

• Journal of Korean Society for Geospatial Information Science
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• v.13 no.4 s.34
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• pp.59-65
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• 2005

It is very important to detect land cover/land use change from the past and to use it for future urban plan. This paper investigated the application of Landsat satellite imagery for detecting urban growth and assessing its impact on surface temperature in the region. Land cover/land use change detection was carried out by using 30m resolution Landsat satellite images and hierarchial approach was introduced to detect more detail change on the changing area through high resolution aerial photos. Also, surface temperature according to land cover/land use was calculated from Landsat TM thermal infrared data and compared with real temperature to analyze the relationship between urban expansion and surface temperature. As a result, the urban expansion has raised surface radiant temperature in the urbanized area. The method using remote sensing data based on GIS was found to be effective in monitoring and analysing urban growth and in evaluating urbanization impact on surface temperature.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.556-559
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• 2007

The Urban Environmental Quality (UEQ) indicates a complex and various parameters resulting from both human and natural factors in an urban area. Vegetation, climate, air quality, and the urban infrastructure may interact to produce effects in an urban area. There are relationships among air pollution, vegetation, and degrading environmental the urban heat island (UHI) effect. This study investigates the application of multi-spectral remote sensing data from the Landsat ETM and TM sensors for the mapping of air quality and UHI intensity in Seoul from 2000 to 2006 in fine resolution (30m) using the emissivity-fusion method. The Haze Optimized Transform (HOT) correction approach has been adopted for atmospheric correction on all bands except thermal band. The general UHI values (${\Delta}(T_{urban}-T_{rural})$) are 8.45 (2000), 9.14 (2001), 8.61 (2002), and $8.41^{\circ}C$ (2006), respectively. Although the UHI values are similar during these years, the spatial coverage of "hot" surface temperature (>$24^{\circ}C$) significantly increased from 2000 to 2006 due to the rapid urban development. Furthermore, high correlations between vegetation index and land surface temperature were achieved with a correlation coefficients of 0.85 (2000), 0.81 (2001), 0.84(2002), and 0.89 (2006), respectively. Air quality is shown to be an important factor in the spatial variation of UEQ. Based on the quantifiable fine resolution satellite image parameters, UEQ can promote the understanding of the complex and dynamic factors controlling urban environment.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.4
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• pp.600-609
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• 2001

WSGGM based low-resolution spectral model for calculating radiation transfer in combustion gases is applied to estimate self-absorption of radiation energy in one-dimensional opposed flow flames. Development of such a model is necessary in order to enable detailed chemistry-radiation interaction calculations including self-absorption. Database of band model parameters which can be applied to various one-dimensional opposed flow diffusion and partially premixed flames is created. For the validation of the model and database, low resolution spectral intensities at fuel exit side are calculated and compared with the results of a narrow band model with those based on the Curtis-Godson approximation. Good agreements have been found between them. The resulting radiation model is coupled to the OPPDIF code to calculate the self-absorption of radiant energy and compared with the results of an optically thin calculation and the results of a discrete ordinates method in conjunction with the statistical narrow band model. Significant self-absorption of radiation is found for the flames considered here particularly for the fuel side of the reacting zone. However, the self-absorption does not have significant effects on the flame structure in this case. Even in the case of the low velocity diffusion flame and the partially premixed flame of low equivalence ratio, the effects of self-absorption of radiation on the flame temperature and production of minor species are not significant.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.35-42
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• 1998

- The Si-$SiO_2$ interface of silicon on insulator (SOI) formed by 100 keV $O^+$ was ohserved using high resolution transmission electron microscopy (HRTEM), before and after annealing. The interface of as-implanted sample, ~$5\times 10^{17}\textrm{cm}^{-2}O^+$ implanted at $550^{\circ}C$ was very rough and it has many defectsoxide precipitate, stacking fault, coesite $SiO_2$ etc. However, the interface became flat by high temperature annealing at $1300^{\circ}C$ for 4 hour. It's roughness, observed by HRTEM, was comparable to the interface roughness of 3 keV $O_2^\;+$ ion beam oxide and -6 nm gate oxide formed by thermal oxidation.

• The Journal of the Korea institute of electronic communication sciences
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• v.3 no.3
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• pp.165-169
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• 2008

Analog-to-Digital converters (ADCs) used in instrumentation and measurements often require high absolute accuracy, including excellent linearity and negligible dc offset. Incremental converters provide a solution for such measurement applications, as they retain most of the advantages of conventional ${\Delta}{\Sigma}$ converters, and yet they are capable of offset-free and accurate conversion. Most of the previous research on incremental converters was for single-channel and dc signal applications, where they can perform extremely accurate data conversion with more than 20-bit resolution. In this paper, a design technique for implementing multiplexed incremental data converters to convert narrow bandwidth ac signals is discussed. A design methodology to optimize the signal-to-quantization+thermal noise ratio of multiplexed IDC is presented. It incorporates the operation principle, topology, and digital decimation filter design. The theoretical results are verified by simulation results.