• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.362.1-362.1
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• 2016

InAs nanowires were synthesized by a vapor-liquid-solid method with InAs powder. The composition and crystalline structure of nanowires were confirmed by energy-dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM), respectively. The thermal conduction of nanowires was investigated by the optical method using Raman spectroscopy: i.e., the local temperature on nanowire was determined by laser heating. As temperature increased, the Raman peaks are shifted to low frequency and broadened. The temperature dependent Raman scattering experiments was realized on InAs nanowires with different percentages of zinc-blende and wurtzite structure. The temperature dependence on the nanowire structure has been successfully obtained: the phonon scattering was more increased in InAs heretostructure nanowires, compared to the InAs nanowires with homostructure. The result strongly suggests that the thermal conduction can be effectively controlled by ordered interface without any decrease in electrical conduction.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.637-641
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• 2004

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.306-310
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• 2018

In order to develop a highly sensitive infrared sensor, it is necessary to develop techniques for decreasing the rate of heat absorption and the transition of the absorption wavelength to a longer wavelength, both of which can be induced by decreasing the pixel size of the bolometer. Therefore, in this study, $1{\mu}m$ hole-arrays with a subwavelength smaller than the incident infrared wavelength were formed on the amorphous silicon-based microbolometer pixels in the absorber, which consisted of a TiN absorption layer, an a-Si resistance layer and a SiNx membrane support layer. We demonstrated that it is possible to reduce the thermal time constant by 16% relative to the hole-patternless bolometer, and that it is possible to shift the absorption peak to a shorter wavelength as well as increase absorption in the $4-8{\mu}m$ band to compensate for the infrared long-wavelength transition. These results demonstrate the potential for a new approach to improve the performance of high-resolution microbolometers.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2481-2485
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• 2007

Spatially resolved, quantitative, non-destructive analysis using synchrotron x-ray reflectivity (XR) with subnano-scale resolution was successfully performed on the nanoporous organosilicate thin films for low dielectric applications. The structural information of porous thin films, which were prepared with polymethylsilsesquioxane and thermally labile 4-armed, star-shaped poly(ε-caprolactone) (PCL) composites, were characterized in terms of the laterally averaged electron density profile along with a film thickness as well as a total thickness. The thermal process used in this work caused to efficiently undergo sacrificial thermal degradation, generating closed nanopores in the film. The resultant nanoporous films became homogeneous, well-defined structure with a thin skin layer and low surface roughness. The average electron density of the calcined film reduced with increase of the initial porogen loading, and finally leaded to corresponding porosity ranged from 0 to 22.8% over the porogen loading range of 0-30 wt%. In addition to XR analysis, the surface and the inner structures of films are investigated and discussed with atomic force and scanning electron microscopy images.

• Publications of The Korean Astronomical Society
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• v.30 no.1
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• pp.17-29
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• 2015

The IGRINS is a near infrared high resolution spectrograph jointly developed by the Korea Astronomy and Space Science Institute and the University of Texas at Austin. We present design and fabrication of the optomechanical mount for the five mirrors, i.e., an input fold mirror, a slit mirror, a dichroic, and two camera fold mirrors. Based on the structure analysis and the thermal analysis of finite element methods, the optomechanical mount scheme satisfies the mechanical and the thermal design requirements given by the optical tolerance analysis. The performance of the fabricated mirror mounts has been verified through three IGRINS commissioning runs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.13-17
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• 2002

Ga$_2$O$_3$ nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing Ga$_2$O$_3$ nanobelts were farmed in a nitrogen atmosphere, while Ga$_2$O$_3$ nanoparticles were formed inan oxygen atmosphere. The structural properties of the Ga$_2$O$_3$ nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission eleotron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are with the range of about 10∼200nm width and 10∼50nm thickness, and that nanoparticles are with the range of about 20∼50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (010) lattice plane and that they are enclosed by facets of the (10T) and (101) lattice planes. The formation of the nanobelts may be described by the vapor-solid(VS) mechanism, and the supersaturation device of gaseous phase may play an important role in the formation of Ga$_2$O$_3$ nanomaterials.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.6
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• pp.453-463
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• 2002

Prognostic meteorological model, MM5V3 (Mesoscale Model 5 Version 3) was used to assess the effects of the land-use modifications on spatial variations of temperature and wind fields in Busan during the selected period of summer season in 2000. We first examined sensitivity analysis for temperature between MM5V3 predictions and meteorological data observed at 4 AWS (Automatic Weather System) stations in Busan, which exhibited low structural and accurate errors (Mean Bias Error, MBE: 0.73, Root Mean Square Error, RMSE: 1.18 on maximum). The second part of this paper, MMSV3 simulations for the modification of land-use was performed with 1 km resolution in target domain, 46$\times$46 $\textrm{km}^2$ area around city of Busan. It was found that modification result from change of surface land-use in central urban area altered spatial distributions of temperature and wind. In particular, heat island core moved slightly to the seaward at 1300 LST. This results may imply that modification of surface land-use leads to change the thermal environments; in addition, it has a significant effect on local wind circulations and dispersions of air pollutants.

• Macromolecular Research
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• v.16 no.1
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• pp.31-35
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• 2008

Photoreactive polymers as a color filter resist containing both photoreactive acrylate and cinnamate double bonds were synthesized usin two step reactions. The chemical structures of the synthesized polymers were confirmed by $^1H$-NMR and FT-IR spectroscopy. The photoreactive polymers were quite soluble in most common organic solvents and produced excellent quality thin films by spin-coating. The photocuring kinetics of the acrylate and cinnamate double bonds were examined by FT-IR and UV- Vis spectroscopy, which confirmed the excellent photoreactivity of both the acrylate and cinnamate double bonds in the polymers. Upon UV irradiation, photocuring was almost completed within approximately 5 min, irrespective of the type of the prepolymers. The polymers also exhibited superior thermal stability, showing little change in transmittance in the visible region even after heating to $250^{\circ}C$ for one hour. Photolithographic micropatterns could be obtained with a resolution of a few microns.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.1
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• pp.66.1-66.1
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• 2014

Radiative transfer programs to simulate the 3-micron auroral $CH_4$ emissions of Jupiter have been developed. The formalism of the radiative transfer calculations including the thermal, fluorescent, and auroral emissions of the $CH_4$ bands for an atmospheric layer having an optical depth of ${\tau}_v$ is given by: ${\mu}dI_v/d{\tau}_v=I_v-{\varpi}_v{^*}J_v(1-{\varpi}_v{^*})B_v-{\varpi}{^*}F_{ov}{e}{x}{p}(-{\tau}_v/{\mu}_o)4{\pi}-hv{\varpi}{^*}V/4{\pi}$ where ${\varpi}_v{^*}$ is the single scattering albedo of $CH_4$ consisting of Einstein A coefficient and collisional deexcitation rate. Other terms are usual radiative transfer parameters appearing in textbooks including the terms for scattered ${\varpi}_v{^*}J_v$, thermal $(1-{\varpi}_v{^*})B_v$, and attenuated solar radiations $F_{ov}$ at the certain atmospheric layer. For auroral excitations, we include V, which is the number of excited states per $cm^3$ persec by auroral particle bombardments. We apply this formalism to the high-resolution spectra of the auroral regions observed with GNIRS/Gemini North, and will present preliminary results for the 3 micron auroral processes of Jupiter.