• Molecules and Cells
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• 제27권2호
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• pp.149-157
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• 2009

In both gram-positive and several gram-negative bacteria, the transcription of dnaK and groE operons is negatively regulated by HrcA; however, the mechanism modulating HrcA protein activity upon thermal stress remains elusive. Here, we demonstrate that HrcA is modulated via reduction and oligomerization in vitro. Native-PAGE analysis was used to reveal the oligomeric structure of HrcA. The oligomeric HrcA structure became monomeric following treatment with the reducing agent dithothreitol, and this process was reversed by treatment with hydrogen peroxide. Moreover, the mutant HrcA C118S exhibited reduced binding to CIRCE elements and became less oligomerized, suggesting that cysteine residue 118 is important for CIRCE element binding as well as oligomerization. Conversely, HrcA mutant C280S exhibited increased oligomerization. An HrcA double mutant (C118S, C280S) was monomeric and exhibited a level of oligomerization and CIRCE binding similar to wild type HrcA, suggesting that cysteine residues 118 and 280 may function as checks to one another during oligomer formation. Biochemical fractionation of E. coli cells overexpressing HrcA revealed the presence of HrcA in the membrane fraction. Together, these results suggest that the two HrcA cysteine residues at positions 118 and 280 function as reduction sensors in the membrane and mediate oligomerization upon stress.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.120-120
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• 1999

III-nitride계 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 수 있는 낮은 저항의 ohmic contact은 필수적이다. Al이나 Ti와 같은 물질을 기초로 한 n-GaN의 경우는 이미 많은 연구결과가 발표되어 전기적 광학적 소자를 동작하는데 충분히 낮은 ohmic contact저항( )을 었다. 그러나 p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도( )의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 이상의 높은 값을 갖게 만들고 있으며, 이에 대한 해경방안으로는 고온의 열처리를 통하여 p-GaN와 금속 사이에서 화학적 반응을 일으킴으로써 표면 근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechanism을 이용하는 것이다. 이로 인해 결국 낮은 접촉 비저항을 얻을 수 있게되며, 일반적으로 p-GaN에서는 Nidl 좋은 물질로 알려져 있다. 그러나 Ni은 50$0^{\circ}C$이상의 열처리에서 쉽게 산화되는 특성 때문에 높은 캐리어를 얻는데 어려운 문제점이 있다. 이에 본 연구에서는 MBE로 성장된 p-GaN박막을 Mg의 activation을 더욱 증가시키기 위해 N2 분위기에서 15분간 90$0^{\circ}C$에서 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/Au를 ohmic metal로 하여 contact한 후에 90$0^{\circ}C$에서 10초간 rapid thermal annealing (RTA)처리를 했다. 성장된 박막의 광학적 성질은 PL로써 측정하였으며, photoconductivity 실험을 통해 impurity의 life time을 분석하였고, persistent photoconductivity를 통해 dark current를 측정하였다. 또한 contact resistance를 계산하기 위해 circular-TLM method을 이용하여 I-V 특성을 조사하였다.

• 한국세라믹학회지
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• 제47권5호
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• pp.401-406
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• 2010

For the lower-temperature preparation of calcium monoaluminate(CA, C:CaO, A:$Al_2O_3$) clinker which is hard to synthesize purely within its melting point, an equimolar hydrate was obtained and then used as a starting raw material of clinker burning. The hydrate was prepared from a mixture of waste oyster shell and industrial aluminium hydroxide by heating to $1200^{\circ}C$, grinding and mixing with water. The hydrate was composed of amorphous aluminium hydroxide and $C_3AH_6$(H:$H_2O$) formed by resolution-precipitation mechanism of the system C-A-H. By heating the hydrate, nearly pure and porous calcium monoaluminate clinker was formed at $1400^{\circ}C$ which is fairly lower temperature than that of its melting point. The formation of calcium monoaluminate was performed mainly by the reaction between amorphous alumina and $C_{12}A_7$ caused by the decomposition of $C_3AH_6$. The immediate and earlier formation of $C_{12}A_7$ seemed to be accelerated by not only high surface area and instability of the thermally decomposed hydrate but also the catalytic effect of water decomposed from the hydrate. The final calcium monoaluminate clinker was very porous because of the influence of highly porous shape of the thermally decomposed hydrate.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1193-1196
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• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

• 공업화학
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• 제9권5호
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• pp.674-679
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• 1998

액체금속로 증기발생기 전열관 재질로 사용이 예상되는 ferrite steel 시편을 사용해서 소듐분위기에서 미량의 물 누출 실험을 수행하였다. 누출경로는 소듐-물 반응생성물 및 부식생성물에 의한 self-plugging 현상과 열적인 transient 및 전열관의 vibration에 의한 re-opening 메카니즘으로 설명이 가능하였다. 실험결과, 600 Psig의 injection 압력으로 5 g $H_2O$를 소듐분위기 속의 시편으로 누출시킨 경우, 누출초기와 약 70분 경과 후에 약간의 누출 흔적이 보였으나, self-plugging되었던 누출경로는 129분이 경과되자 완전 re-opening된 것으로 확인되었다. 누출시편의 re-opening shape은 2중으로 되어 있었으며, 소듐부위에서 시편 표면에 나타난 re-opening size 약 2 mm의 직경을 나타내었다.

• 한국화재소방학회논문지
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• 제26권4호
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• pp.1-9
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• 2012

본 연구에서는 중소기업형의 밀가루 제조공정 및 각질제거용 기능성 비누를 생산하는 화장품 제조공정에서의 분진들을 채집하여 폭발 및 열적특성을 비교하기 위해 실험을 수행하였다. 폭발실험은 Hartman식 분진폭발장치를 이용하였고, 열적실험은 DSC 및 TGA를 이용하여 활석첨가시 농도의 변화에 따른 폭발압력 및 폭발하한계와 온도에 따른 무게감량과 흡열량을 측정하였다. 폭발실험결과 두 시료 모두 활석분진의 비율이 증가할수록 폭발하한농도가 증가하는 것을 볼 수 있었고, 폭발압력은 감소됨을 확인하였다. 그리고 DSC 실험결과 활석의 첨가량이 증가할수록 열유속은 감소하고 온도 또한 약간의 감소상태인 것으로 분석되었다. 또한 두 시료 모두 승온 속도가 증가 할수록 흡열개시온도가 낮은 온도부분으로 이동하고 있으며, 흡열량도 크게 증가하였다. 아울러 TGA 실험결과 활석의 양이 증가할수록 전체 무게감량이 줄어드는 것으로 나타났다. 향후 분진폭발메커니즘의 지속적 연구와 보완이 효과적인 분진폭발예방 대책수립에 기여할 것으로 기대된다.

• 열처리공학회지
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• 제31권5호
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• pp.220-230
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• 2018

The objective of this study is to investigate the effect of solution treatment on the microstructure and corrosion behavior of cast AZ91-4%RE magnesium alloy. In the as-cast state, microstructure of the AZ91-4%RE alloy was characterized by intermetallic ${\beta}(Mg_{17}Al_{12})$, $Al_{11}RE_3$ and $Al_2RE$ phase particles distributed in ${\alpha}-(Mg)$ matrix. After solution treatment, the ${\beta}$ particles with low melting point dissolved into the matrix, but Al-RE phases still remained due to their high thermal stabilities. It was found from the immersion and potentiodynamic polarization tests that corrosion rate of the AZ91-4%RE alloy increased after the solution treatment. On the contrary, EIS tests and EDS compositional analyses on the surface corrosion products indicated that the stability of the corrosion product was improved after the solution treatment. Examinations on the corroded microstructures for the ascast and solution-treated samples revealed that dissolution of the ${\beta}$ particles which play a beneficial role in suppressing corrosion propagation, would be responsible for the deterioration of corrosion resistance after the solution treatment. This result implies that the microstructural features such as amount, size and distribution of secondary phases that determine corrosion mechanism, are more influential on the corrosion rate in comparison with the stability of surface corrosion product.

• Bulletin of the Korean Chemical Society
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• 제8권2호
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• pp.96-101
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• 1987

2-Ethoxy-6-methoxy-5-cyano-3,4-dihydro-2H-pyran (1_a$), 2-n-butoxy-6-methoxy-5-cyano-3,4-dihydro-2H-pyr an (1b), 2-isobutoxy-6-methoxy-5-cyano-3,4-dihydro-2H-py ran ($1_c$), and 2-ethoxy-6-methoxy-3-methyl-5-cyano-3,4-dihydro -2H-pyran ($1_d$) were prepared by (4 + 2) cycloaddition reaction of methyl $\alpha$-cyanoacrylate with the corresponding alkyl vinyl ethers. Compounds $1_{a-d}$ were ring-open polymerized by cationic catalyst to obtain alternating head-to-head (H-H) copolymers. For comparison, head-to-tail (H-T) copolymer $3_a$ was also prepared by free radical copolymerization of the corresponding monomers. The H-H copolymer exhibited minor differences in its $1_H% NMR and IR spectra, but in the $^{13}C$ NMR spectra significant differences were observed between the H-H and H-T copolymers. Glass transition temperature ($T_g$) of H-H copolymer was higher than that of the H-T copolymer, but thermal decomposition temperature of the H-H copolymer was lower than that of the H-T copolymer. Compounds $1_a$, $a_b$, and $1_c$, copolymerized well with styrene by cationic catalyst, but compound 1d failed to copolymerize with styrene. All of the H-H and H-T copolymers were soluble in common solvents and the inherent viscosities were in the range 0.2-0.4 dl/g.

• 대한금속재료학회지
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• 제50권10호
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.