• 태양에너지
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• 제17권3호
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• pp.67-73
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• 1997

공기는 열전도 계수가 낮으므로 밀폐공간 내에서 적당한 형태를 형성하여 자연대류 열전달을 촉진 시키다면 태양열 집열기로서 건물 난방에 이용할 수 있고, 또 자연대류가 일어나지 않도록 유동을 억제 시킨다면 매우 훌륭한 단열재로 사용할 수 있다. 따라서, 본 연구에서는 건물벽 구조에 따라 내 외벽 사이에 단순 사각 밀폐공간을 형성하여 외벽의 가열부와 내벽의 방열부의 위치를 변화시켜 가며 수치해석을 수행하여 최대 난방 및 단열효과를 얻을 수 있는 새로운 대체 건물벽 개발에 관한 기초 설계 자료를 제시하고자 한다. 연구 결과 부력에 의한 driving force를 얻기 위해서는 방열부가 가열부보다 항상 위쪽에 위치하고 크기는 전체 높이의 1/2 이하일 때 열전달이 촉진됨을 알았다.

• Journal of Advanced Marine Engineering and Technology
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• 제39권8호
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• pp.801-806
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• 2015

The experimental analysis of a crevice-type vapor chamber heat pipe (CVCHP) is investigated. The heat source of the CVCHP is a high-power light-emitting diode (LED). The CVCHP, which exhibits a bubble pumping effect, is used for heat dissipation in a high-heat-flux system. The working fluid is R-141b, and its charging ratio was set at 60 vol.% of the vapor chamber in a heat pipe. The total thermal conductivity of the falling-liquid-film-type model, which was a modified model, was 24% larger than that of the conventional model in the LED package. Flow visualization results indicated that bubbles grew larger as they combined. These combined bubbles pushed the working fluid to the top, partially wetting the heat-transfer area. The thermal resistance between the vapor chamber and tube in the modified design decreased by approximately 32%. The overall results demonstrated the better heat dissipation upon cooling of the high-power LED package.

• 한국신뢰성학회:학술대회논문집
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• 한국신뢰성학회 2004년도 정기학술대회
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• pp.147-151
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• 2004

In this study, an optical fiber assembly directly coupled with a laser diode or a photo diode is designed to confirm high reliable optical coupling efficiency of optical transmitter(Tx) and receiver(Rx). The optical fiber assembly is fabricated by soldering an optical fiber and a Kovar ferrule using a glass solder after inserting an optical fiber through a Kovar ferrule. The Kovar which has good welding characteristics is applied to introduce laser welding technique. The glass solder has excellent thermal characteristics such as thermal shift delamination compared with PbSn, AuSn solder previously used usually. Furthermore, the glass solder doesn't need fiber metalization and this enables low cost fabrication. However, the glass soldering is high temperature process over 35$0^{\circ}C$ and the convex shape after solidification due to surface tension causes the stress concentration on optical fiber. The stress concentration on the optical fiber increases the optical insertion loss and possibility of crack formation. The shape of glass solder was designed referring to 2-D Axi-symmetric FEM simulation. To test the mechanical reliability, mechanical vibration test and shock test were done according to Telcorida GR-468-Core protocol. After each test, the optical loss of the stress distributed fiber assembly didn't exceed 0.5 dB, which passes the test.

• 한국재료학회지
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• 제21권1호
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• 한국광학회지
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• 제18권4호
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• pp.270-273
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• 2007

광섬유가 연결된 레이저 다이오드로 펌핑하는 Nd:YAG 레이저의 공진기 길이를 14 mm로 구성하고 펌핑광의 세기에 따른 946 nm Nd:YAC 레이저의 출력 특성을 조사하였다. 이때 이득 매질의 온도는 열전 냉각기를 이용하여 일정하게 유지시켰다. 그 결과 이득 매질의 온도를 낮게 유지할수록 더 강한 출력을 얻을 수 있었으며, $5^{\circ}C$에서 9.95 W로 펌핑할 때 최고 870 mW의 출력을 확인하였다. 출력거울의 반사율 변화에 따른 펌핑광의 발진 문턱값을 측정하여 0.23의 공진기 손실값을 얻을 수 있었다. 또한 펌핑광의 세기가 10 W 이상일 때 이득매질의 열적인 효과로 인한 출력의 감소 현상을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• 센서학회지
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• 제23권3호
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.95-100
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• 2010

LED (Light Emitting Diode)는 인가된 에너지 대비 15%가 빛으로, 나머지 85%가 열로 변환되는 것은 이미 잘 알려져 있다. 최근 LED칩 용량이 증가함에 따라서 LED칩으로부터 방출되는 열은 더욱 증가하게 되고 이는 LED 제품의 성능저하와 수명단축에 직접적인 영향을 미친다. 따라서, 산업계에서는 고출력 LED 칩에서 발생하는 열을 제어하기 위해 제품설계구조 연구가 진행 중에 있으며 또한, 부가적으로, 기존의 알루미늄, 접착제 및 구리를 사용하는 MCL(Metal Clad Laminate)구조에서 저가형 FR4 및 구리를 사용하는 CCL (Copper Clad Laminate)로 변경하여 원가절감을 하고자 하는 대체 소재연구가 진행되고 있다. 본 연구에서는 저가형 CCL에 열방출 극대화를 위하여 열비아(thermal via)를 디자인별로 형성한 후 1 W급 LED 칩을 실장하여 열저항(thermal resistance) 변화를 분석하였으며, 최적의 열방출을 위한 열비아 구조를 제안하고자 하였다.

• 새물리
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• 제68권11호
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• pp.1167-1172
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• 2018

탄소 나노 튜브는 탄소 원자들이 육각형의 벌집모양으로 서로 연결된 고분자 탄소동소체로 다중벽일 경우 $3000W{\cdot}m^{-1}{\cdot}K^{-1}$, 단일벽일 경우 $6000W{\cdot}m^{-1}{\cdot}K^{-1}$ 정도로 매우 높은 열전도도를 보인다. 본 연구에서는 단일 빔과 이중 빔 방법으로 열렌즈 효과를 이용하여, 1.5 M 다중벽 탄소 나노튜브 분산액의 투과율과 열확산도를 측정하였다. 단일 레이저 빔의 진행방향으로 시료를 움직이는 z-scan 방법을 통해 비선형 광학계수들을 구하고, 이중 레이저 빔을 이용하여 열확산도를 측정하였다. 펌프 빔으로는 파장 532 nm이고 세기가 100 mW인 DPSS (Diode-pumped solid state, DPSS) 레이저를 사용하였고, 프로브빔으로는 파장이 633 nm이며 세기가 5 mW인 He-Ne 레이저를 사용하였다. 실험 결과 농도가 9.99, 11.10, 16.65, 19.98 mM일 때 비선형 흡수계수는 각각 0.046, 0.051, 0.136, 0.169 m/W였다. 또한 비선형 굴절률은 0.20, 0.51, 1.25, $1.32{\times}10^{-11}m^2/W$였고, 열확산도 평균치는 $1.33{\times}10^{-6}m^2/s$이었다.

• 한국세라믹학회지
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• 제49권1호
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• pp.111-117
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• 2012

Dependencies of thermal properties on the crystallization behavior of $0.9CaMgSi_2O_6-0.1MgSiO_3$ glass-ceramics were investigated as a function of heat-treatment temperature from $750^{\circ}C$ to $950^{\circ}C$. The crystallization behavior of the specimens depended on the heat-treatment temperature, which could be evaluated by differential thermal analysis (DTA), Fourier transform infrared spectroscopy (FT-IR), and X-ray diffraction (XRD) analysis by the Rietveld-reference intensity ratio (RIR) combined procedure. With an increase of the heat-treatment temperature, the thermal conductivity and thermal diffusivity of the heat-treated specimens increased. These results could be attributed to the increase of crystallization with heat-treatment temperature. However, the specific heat capacity of the heat-treated specimens was not affected by the heat-treatment temperature. The thermal conductivities measured from $25^{\circ}C$ to $100^{\circ}C$ were also discussed for application to lighting-emitting diode (LED) packages and substrate materials.