• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.338-338
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• 2011

최근 FPD (Flat Pannel Display) 시장이 커짐에 따라 고효율, 저비용 제작 공정이 화두로 떠오르고 있다. ELA (Excimer Laser Annenling)을 이용한 LTPS (Low Temperature Poly Silicon) 공정은 mobility와 전류 점멸비 등에서 장점을 가지지만, 고비용, 대면적과 short-range에서 uniformity가 어렵다는 단점이 있다. 이를 극복하기 위한 방법으로 dLTA (diode Laser Thermal Annealing) 공정에 대한 연구가 진행되고 있다. 본 연구에서는 Flexible Display을 만들기 위한 방법으로 dLTA 공정을 진행하였다. 이 방법은 PI (Poly imide) 기판 위에 a-Si을 ICP CVD로 증착시킨 후, Diode Laser (980 nm)를 이용한 annealing을 통하여 a-Si이 poly-Si으로 결정화가 되는 것을 확인하였고, 에너지 조사량에 따른 grain boundary와 grain size을 통하여 비교 분석하였다. 실험 결과 ELA 공정을 이용한 것과 버금가는 실험 결과를 얻을 수 있었다.

• Korean Journal of Optics and Photonics
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• v.12 no.6
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• pp.489-495
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• 2001

We developed a design code for a diode side-pumped Nd:YAG laser with a diffusive reflector to investigate the optimum design conditions resulting in homogeneous absorption distribution and efficient laser output power. By including the thermal tensing effect in the calculation of the laser output power, the calculated output powers were in fairly good agreement with the experimental results within the stable resonator condition. The calculation method can be used effectively for a diode side-pumped Nd:YAG laser in choosing the optimum design parameters and in predicting the laser output power.

• Journal of Radiation Protection and Research
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• v.26 no.3
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• pp.167-175
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• 2001

Semiconductor diode detectors coated with neutron reactive material are presently under investigation for various uses, such as remote sensing of thermal neutrons, fast neutron counting, and thermal neutron radiography. Theory indicates that single-coated devices can yield thermal neutron efficiencies from 4% to 11 %, which is supported by experimental evidence. Radiation endurance measurements indicate that the devices function well up to a limiting thermal neutron fluence of $10^{13}/cm^2$, beyond which noticeable degradation occurs. Thermal neutron contrast images of step wedges and simple phantoms, taken with dual in-line pixel devices, show promise for thermal neutron imaging detectors.

• Korean Journal of Optics and Photonics
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• v.30 no.5
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• pp.193-196
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• 2019

The design and control of thermal flow is important for the operation of high-power laser diodes (LDs). It is necessary to analyze and improve the thermal bottleneck near the active layer of an LD. As the error in prediction of the thermal resistance of an LD is large, typically due to the hyperbolic increase and saturation to linear increase of the thermal resistance as a function of thickness, it is helpful to use a simple, modified divergence model for the improvement and optimization of thermal resistance. The characteristics of LDs are described quite well, in that the values for simulated thermal resistance curves and the thermal cross section followed are almost the same as the values from the model function. Also, the thermal-cross-section curve obtained by differentiating the thermal resistance is good for identifying thermal bottlenecks intuitively, and is also fitted quite well by the model proposed for both a typical LD structure and an improved LD with thin capping and high thermal conductivity.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.266-271
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• 1996

In this study the evaluation of RWG MQW-LD fabricated with our vertical LPE system has been carried out with measuring its optical characteristics. This laser diode operated in lateral single mode as designed, and it showed 77% of internal quantum efficiency, 18cm of internal loss and 5.5$\AA$/$^{\circ}C$ of the thermal characterictic of the lasing wavelength. From these results we conclude that the vertical LPE system are fairly good and it might he useful to fabricate MQW wafer for laser diode.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.186-190
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• 1998

We fabricated a diode-side pumped high power Nd:YAG laser with a gold coated flow tube(diameter of 10mm) and three sets of 140W diode bar. The diameter of Nd:YAG rod was 6mm and its length was 130mm. We obtained 130W cw power from a linear resonator with an 11% output coupler, which corresponds to the slope efficiency of 43% and the optical efficiency of 31%. The measured beam quality factor(M$^2$) reached about 85 which is fairly large due to the large size of the rod. Thermal lensing of the rod was measured to be 5.3-7.4D/$kW_{pump}$ when the laser was operating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.216-217
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• 2008

Zinc-oxide films were deposited by pulsed laser deposition (PLD) technique using doped ZnO target (mixed $In_2O_3$ 0.1, 0.3, 0.6 at. % - atomic percentage) on the p-type Si(111) substrate. A little Indium has added at the n-ZnO films for the electron concentration control and enhanced the electrical properties. Also, post thermal annealed ZnO films are shown an enhanced structural and controled electron concentration by the annealing condition for the hetero junction diode of a better emitting characteristics. The electrical and the diode characteristics of the ZnO films were investigated by using Hall effect measurement and current-voltage measurement.

• Current Optics and Photonics
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• v.1 no.2
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• pp.143-149
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• 2017

LED arrays with pixel numbers of $3{\times}3$, $4{\times}4$, and $5{\times}5$ have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of $280{\times}280{\mu}m$) fabricated by micro-opto-electro-mechanical systems. Simulation results showed that the thermal resistances of the $3{\times}3$, $4{\times}4$, $5{\times}5$ arrays were $52^{\circ}C/W$, $69.7^{\circ}C/W$, and $84.3^{\circ}C/W$. The junction temperature was calculated by the peak wavelength shift method, which showed that the maximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The central temperature would be minimized with $40{\mu}m$ pixel pitch and $150{\mu}m$ substrate thickness as calculated by thermal modeling using finite element analysis. The modeling can be used to optimize parameters of highly integrated AlGaInP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.4
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• pp.449-455
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• 2019

This paper proposes a flyback diode of bridgeless PFC converter as SiC SBD (Schottky Barrier Diode) to achieve high efficiency. In addition, through the explanation of the operation principle of the bridgeless PFC converter, the conduction section of the freewheel diode is shown in the bridgeless PFC converter to verify the contribution of system loss due to the loss of the freewheel diode. The advantages of the SiC SBD device's physical properties and the reverse recovery characteristics are explained, and the efficiency is measured by measuring the turn-on and turn-off losses. The loss was calculated. The simulation results were calculated in consideration of device characteristics and verified through the waveform analysis and comparison of the actual system. In order to consider the device characteristics, the simulation was conducted using the thermal module of PSIM. As a result of the prototype test, the turn-on loss was 0.608W and the turn-off loss was 21.62W, resulting in the total switching loss of 22.228W. The comparison of the two results proved the validity of the experimental method. In addition, a high efficiency of 94.58% is achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.