• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.752-755
• /
• 2007

In this paper, to compare thermal and chemical stabilities of poly-ethylene-terephtalate (PET) and polyether- surphone (PES), we fabricated Polymer Light Emitting Diode (PLED) on each substrate and analyzed these characteristics. Moreover, we analyzed the characteristics of the device deposited LiF (1 nm) before cathode deposition.

• Journal of Advanced Marine Engineering and Technology
• /
• v.31 no.5
• /
• pp.567-574
• /
• 2007

Aluminum and aluminum alloys have high rate of lightness, recycling property and excellent specific strength. Fields using them have been widening because they ould satisfy both energy reduction and high efficiency in manufactures production. But they have many problems on welding due to high thermal conductivity and reflectivity, so the study to solve these problems ate proceeding actively around the world. This study was purposed to improve weldability and spread application range for aluminium alloys by using the unique property of aluminium which absorb high energy around $800{\mu}m$ wavelength and the higher temperature, the mote absorbtion of laser beam on preheating by multi-wavelength laser beam(pulsed Nd:YAG laser + diode laser with $808{\mu}m$ wavelength). The favorable mechanical properties were acquired by the test results of strength, hardness and leak of weld metal which had reduced its defect like crack and so on.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.3
• /
• pp.7-14
• /
• 2016

High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.

• Journal of Sensor Science and Technology
• /
• v.18 no.3
• /
• pp.222-225
• /
• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.

• Proceedings of the KIPE Conference
• /
• 2015.07a
• /
• pp.485-486
• /
• 2015

This paper introduces the new 1200V $SPM^{(R)}$ (Smart Power Module), which is fully optimized and intelligent integrated IGBT inverter modules for up to 6kW motor drive applications. It utilizes newly developed NPT trench IGBT with the advanced STEALTHTM freewheeling diode, and built-in bootstrap diode. HVICs, multi-function LVIC, and built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC(Direct Bonded Copper) substrate for the better thermal performance. This paper provides an overall description of the newly developed 1200V/35A $SPM^{(R)}$ 2 product.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.1
• /
• pp.139-146
• /
• 2001

This paper presents a study on heat transfer and residual distortion analysis of laser welded EDFA(Erbium Doped Fiber Amplifier) LD(Laser Diode) Pump using the finite element method. In the production process of LD Pump in light-wave communication system, ferrule and saddle are welded by Nd-YAG laser. These parts experience thermal and mechanical effect during heating and cooling cycle with the laser welding. Thus distortion happens in the laser-welded packaging, and it makes an error in detecting the light signal translate through optical fiber in LD Pump. The amount of final displacement produced by the laser welding is predicted using the finite element method. And the optimal shape of saddle is proposed with the results of numerical analyses to minimize the displacement.

• Journal of the Optical Society of Korea
• /
• v.19 no.3
• /
• pp.311-316
• /
• 2015

We investigate the temperature dependence of the phosphor conversion efficiency (PCE) of the phosphor material used in a white light-emitting diode (LED) consisting of a blue LED chip and yellow phosphor. The temperature dependence of the wall-plug efficiency (WPE) of the blue LED chip and the PCE of phosphor are separately determined by analyzing the measured spectrum of the white LED sample. As the ambient temperature increases from 20 to $80^{\circ}C$, WPE and PCE decrease by about 4.5% and 6%, respectively, which means that the contribution of the phosphor to the thermal characteristics of white LEDs can be more important than that of the blue LED chip. When PCE is decomposed into the Stokes-shift efficiency and the phosphor quantum efficiency (QE), it is found that the Stokes-shift efficiency is only weakly dependent on temperature, while the QE decreases rapidly with temperature. From 20 to $80^{\circ}C$ the phosphor QE decreases by about 7% while the Stokes-shift efficiency changes by less than 1%.

• Current Optics and Photonics
• /
• v.4 no.6
• /
• pp.461-465
• /
• 2020

A dual-mode laser terahertz source consisting of two in-line distributed Bragg reflector (DBR) laser diodes (LD) is proposed. It is less susceptible to residual reflections from facets than an in-line dual-mode distributed feedback (DFB) LD. The characteristics of the proposed terahertz source are theoretically investigated using a split-step time-domain simulation. It is shown that terahertz waves of frequencies from 385 GHz to 1725 GHz can be generated by appropriate thermal tuning of two DBR LDs. The dual-mode DBR LD terahertz source exhibits good spectral quality for residual facet reflectivity below 0.02, but facet reflectivity of the in-line dual-mode DFB LD terahertz source should be below 0.002 to provide similar spectral quality.

• Journal of the Korean Society of Industry Convergence
• /
• v.24 no.4_1
• /
• pp.411-419
• /
• 2021

In this study, IGBT_Total_Loss and DIODE_Total_Loss were used to analyze the slope of the junction temperature for each section for temperature and duty variables in order to simply calculate the junction temperature of the power semiconductor (IGBT). As a result of the calculation, IGBT_Max_Junction_Temp and DIODE_Max_Junction_Temp form a proportional relationship with temperature for each duty. This simulation data shows that the power loss of a power semiconductor is calculated in a complex manner according to the current dependence index, voltage dependence index, and temperature coefficient. By applying the slope for each condition and section, the junction temperature of the power semiconductor can be calculated simply.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.05a
• /
• pp.105-108
• /
• 2004

The effect of thermal deformation of optical pick-up due to laser diode(LD) and LD driving integrated circuit on the optical performance of digital versatile disk(DVD) optical system was analyzed using the finite element analysis with initial surface residual stress conditions, and results were compared with the measured results with holographic interferometry. Ray tracing was performed using the deformed configuration of optical system.