• Title/Summary/Keyword: Thermal Coating

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Synthesis and Characterization of CoFe2O4/SiO2 using Cobalt Precursors from Recycling Waste Cemented Carbide (폐 초경합금에서 추출된 Co를 이용한 CoFe2O4/SiO2 합성 및 특성평가)

  • Yu, Ri;Pee, Jae-Hwan;Kim, Yoo-Jin
    • Journal of the Korean Ceramic Society
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    • v.48 no.5
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    • pp.454-457
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    • 2011
  • We report the preparation of nanocrystalline cobalt ferrite, $CoFe_2O_4$, particles using recycled $Co_3O_4$ and their surface coating with silica using micro emulsion method. Firstly, the $Co_3O_4$ powders were separated from waste cemented carbide with acid-base chemical treatment. The cobalt ferrite nanoparticles with the size 10 nm are prepared by thermal decomposition method using recycled $Co_3O_4$. $SiO_2$ was coated onto the $CoFe_2O_4$ particles by the micro-emulsion method. The $SiO_2$-coated $CoFe_2O_4$ particles were studied their physical properties and characterized by X-ray diffraction (XRD), high resolution-transmission electron microscopy (TEM) analysis and CIE Lab value.

Improvement of Welding Performance of MIG Arc Welding using Superposition Ac Pulse (MIG 아크용접에서의 교류중첩펄스를 이용한 용접성능향상)

  • Kim, Tae-Jin
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.10
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    • pp.141-149
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    • 2008
  • Because aluminum has a lighter weight and higher strength than iron, it is frequently used in the transportation industry for the purpose of reducing the weight of a chassis, and thereby increasing fuel efficiency. However, there are some difficulties with arc welding aluminum due to its lower melting point, high thermal conductivity and oxidation coating on its surface. This study proposed using superposition ac pulse MIG arc welding, which has been improved from the pulse waveform of conventional MIG welding. A MIG arc welding power source was developed to test the effectiveness of this method.

A study on the Improvement of Ferroeletric Characteristics of PZT thin film for FRAM Device (FRAM 소자용 PZT박막의 강유전특성에 관한 연구)

  • Lee, B.S;Chung, M.Y.;Shin, P.K.;Lee, D.C.;Lee, S.H.;Kim, J.S.
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1881-1883
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    • 2005
  • In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

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A study on the PZT thin films for Non-volatile Memory (비휘발성 메모리용 강유전체 박막에 관한 연구)

  • Lee, B.S.;Park, J.K.;Kim, Y.W.;Park, K.S.;Kim, S.H.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1562-1564
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    • 2003
  • In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

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A Study on the Manufacture of Optical Filters for PDP Panel in Conductive Types (PDP 패널용 전도막 광학 필터 제조에 관한 연구)

  • Kim, Tae-Hoon;Kang, Bong-Gu;Lee, Tae-Hoon;Son, Se-Mo
    • Journal of the Korean Graphic Arts Communication Society
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    • v.26 no.2
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    • pp.31-43
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    • 2008
  • The functional dyes, which has various optical characteristics that can be applicable to field of electronic, photo electronic, such as sensor or electrode, were synthesized. Physical property and optical stability was studied with preparation of conductive type film as a kind of optical filter of plasma display panel, by adapting neon cut off dye, which can selectively absorbing between 580 and 610nm wavelength. The filter was prepared with PSA resin, which has functional group of - COOH and - OH, as binder. And the characters such as spectroscopy, heat-proof / wet-proof, thermal stability and commerciality, which must be held by functional dyes, were examined. Conductive type film is the kind of film includes only neon cut off dyes. For the neon cut off dyes, cyanine dyes can be applied. And it is observed that spectrum of before and after the durability test are not changed due to stability of dyes, as the result of coating on the mesh film with PSA binder.

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Synthesis of highly crystalline nanoporous titanium dioxide at room temperature (상온에서 고결정성 나노기공 이산화티탄 제조기술)

  • Chung, Pyung Jin;Kwon, Yong Seok
    • Journal of Energy Engineering
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    • v.25 no.2
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    • pp.65-78
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    • 2016
  • Initial studies of the photocatalyst has been developed from the field relating to the conversion and storage of solar energy. Recently, the study of the various organic decomposition compound and the water purification and waste water treatment by ultraviolet irradiation in the presence of light or a photocatalyst are being actively investigated. In addition, the oxidized material-carbon nanotubes, graphene-nanocomposites have been studied. Such a complex is suitable as a material constituting the solar cells and photolysis nanoelectronics, including the flexible element due to thermal and chemical stability.

Properties of the metallic glass thin films fabricated by multicomponent single alloying target and its applications in various industrial fields

  • Shin, S.Y.;Moon, K.I.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.05a
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    • pp.77-77
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    • 2015
  • Metallic glass alloys having dense packing structure have short range ordered structure with long range homogeneity. Therefore, they can provide complete corrosion protection and unique electrical properties. Recently, metallic glass thin films have received much attention to extend its application fields combining with PVC coating technologies. The metallic glass thin films can change the surface properties of the conventional bulk materials which need anticorrosion properties. However, multi-component alloying targets are required to fabricate the metallic glass thin films because metallic glass alloys contain more than three elements. Recently, many researchers have been reported the properties of the metallic glass thin films synthesized with multi-cathode systems or amorphous target. But, it is difficult to fabricate the large sized sputtering targets for mass production equipment with high toughness and thermal stability. In this study, newly developed sputtering target with glass forming ability and the properties of the metallic glass thin films will be introduced with respect to the various application fields such as bipolar plate in PEM fuel cell and decorative coatings for electric device and construction fields.

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Preparation and Characteristics of $La_{1-x}Sr_xCoO_3$ Cathode material as function of Sr mole fraction in SOFC (SOFC의 Sr 첨가량에 따른 $La_{1-x}Sr_xCoO_3$ Cathode 재료의 제조 및 특성 연구)

  • Park, J.H.;Eom, S.W.;Moon, S.I.;Park, T.G.;Yun, M.S.
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.202-204
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    • 1994
  • Nowadays Perovskite $La_{1-x}Sr_xCoO_3$ is a preferred cathode material in the construction Solid Oxide Fuel Cell (SOFC). The $La_{1-x}Sr_xCoO_3$ with Sr contents ranging from X=0.0 to X=1.0 were prepared by a citrate method. All samples were examined by X-ray powder diffraction. The samples used for measuring thermal expansion were prepared as pellets by cold pressing and subsequent sintering in air at $1200^{\circ}C$ for 5 hours. To measure the sub-product of $La_{1-x}Sr_xCoO_3$ with YSZ, where coating films were sintered at $1200^{\circ}C$ for 5 hour.

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Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film (고분자막을 점착층으로 사용한 유기 박막 트랜지스터의 안정성)

  • Hyung, Gun-Woo;Pyo, Sang-Woo;Kim, Jun-Ho;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.61-62
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    • 2006
  • In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

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Effects of Organic Passivation Layers by Vapor Deposition Polymerization(VDP) for Organic Thin-Film Transistors(OTFTs) (Vapor Deposition Polymerization(VDP)을 이용한 페시베이션이 유기박막트렌지스터에 주는 영향)

  • Park, Il-Houng;Hyung, Gun-Woo;Choi, Hak-Bum;Kim, Jae-Hyeuk;Kim, Woo-Young;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.114-115
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    • 2007
  • In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing, In order to form polymeric film as an passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing, Field effect mobility, threshold voltage, and on-off current ratio with 450-nm-thick organic passivation layer were about $0.21\;cm^2/Vs$, IV, and $1\;{\times}\;10^5$, respectively.

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