• 한국전자통신학회논문지
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• 제14권3호
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• pp.505-512
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• 2019

본 논문에서는 원자력발전소의 전력이 상실되는 사고가 발생하더라도 사용후핵연료 저장조의 수위를 감시할 수 있는 방법을 제시하고, 이의 성능 및 한계점을 분석하였다. 제안한 방식은 광분배기를 통과한 광신호가 저장조의 냉각수 및 공기에서 반사되는 반사광의 세기를 측정하는 방식이다. $1{\times}8$ 광분배기를 사용하는 경우에는 저장조의 수위를 측정하는데 문제가 없을 것으로 분석되나, $1{\times}16$ 광분배기를 사용하는 경우에는 Rayleigh 역산란으로 인해 16개의 출력포트 중 15개만이 수위측정 용도로 사용이 가능하고, $1{\times}32$ 광분배기를 사용하는 경우에는 32개의 출력포트 중 25개만이 수위측정 용도로 사용이 가능한 것으로 분석되었다.

• 전기전자학회논문지
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• 제19권3호
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• pp.378-384
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• 2015

기존의 HEVC 코어 역변환기에서는 동일한 시간에 동일한 수의 화소를 처리하기 위해서 $2n{\times}2n$ 역변환기에 여분의 $n{\times}n$ 역변환기를 추가하여 한 개의 $2n{\times}2n$ 역변환기 또는 두 개의 $n{\times}n$ 역변환기로 동작하게 하였으나 여분의 $n{\times}n$ 역변환기 때문에 하드웨어 크기가 증가하는 단점이 있다. 이러한 문제점을 해결하기 위해 곱셈기를 재사용하여 여분의 $4{\times}4$ 역변환기를 없앤 새로운 $8{\times}8$ HEVC 코어 역변환기 구조가 제안되었으며, 본 논문에서는 이를 확장한 $16{\times}16$ HEVC 코어 역변환기 구조를 제안한다. 제안하는 $16{\times}16$ HEVC 역변환기는 $4{\times}4$ 역변환, $8{\times}8$ 코어 역 변환, $16{\times}16$ 코어 역변환에서 프레임 처리 시간이 모두 동일하며, 여분의 역변환기를 사용하는 아키텍쳐에 비해 게이트 수를 13% 줄일 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.82-85
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• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.97-98
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• 2005

양성자 조사법에 의하여 고속 전력용 다이오드를 제작하기 위하여 punch-through 다이오드에 다양한 조건으로 양성자를 조사하였다. 동일한 소자에 전자선을 조사한 소자와 속도 향상을 위한 공정이 행하여지지 않은 동일한 소자 각각의 특성을 비교 분석하였다. 양성자 주입은 주입 에너지를 1 MeV 와 1.3 MeV로, 각 에너지 조건에서 도즈를 $1\times10^{12}cm^{-2}$, $1\times10^{13}cm^{-2}$로 변화 시켰다. 분석 결과 양성자 주입된 소자에서 역방향 회복시간은 최소 소자의 약 45%, 전자선이 조사된 소자에 비하여 약 73 %의 값으로 향상시킬 수 있었으며 역방향 항복 전압과 순방향 저항은 처리되지 않은 소자와 전자빔이 조사된 시편들의 값과 비슷한 값을 나타내었다.

• Journal of Information Display
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• 제3권1호
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• pp.11-16
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• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• Journal of electromagnetic engineering and science
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• 제17권3호
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• pp.133-137
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• 2017

In this study, a 28-GHz U-slot array antenna for a wideband communication system is proposed. The U-slot patch antenna structure consists of a patch, two U-shaped slot, and a ground plane. With the additional U-slot, the proposed antenna has around 10% of bandwidth at -10 dB. To increase gain, the U-slot antenna is arrayed to $2{\times}2$. The proposed antenna is designed and fabricated. The $2{\times}2$ array antenna volume is $41.3mm{\times}46mm{\times}0.508mm$. The proposed antenna was measured and compared with the simulation results to prove the reliability of the design. The bandwidth and gain of the measurement results are 3.35 GHz and 13 dBi, respectively and the operating frequency is around 28 GHz.

• 한국안전학회지
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• 제15권1호
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• pp.36-42
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• 2000

An experimental study was carried out to investigate the effects of inclined angles of channel on thermal stability of electronic components. In this study, it is focused on the natural convection heat transfer from an inclined parallel channel with discrete protruding heat sources. The material used for the inclined parallel channel was epoxy-resin, while air as the cooling fluid. Heat transfer phenomena for inclined angles of $\psi$=$15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$ and for the range of $9.52{\times}10^5/ were analyzed. The thermal fields in the channel were visualized by Mach-Zehnder interferometer. Also, local temperatures were measured by thermocouples along the channel wall and heat sources surface. As a result, for the range of $4.29{\times} 10^5/, a useful correlation of mean Nusselt number was proposed as a function of modified channel Rayleigh number.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.502-508
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• 2000

In order to detect the partial discharge with the metallic particle in GIS the AE(Acoustic Emission) sensor was designed and simulated by ANSYS 5.5 and manufactured as the coupled vibration mode. The measured resonant frequency and the maximum sensitivity frequency of three coupled AE sensors were as follows ; 147.88 kHz in 8.1mm $\Phi$$\times$8.1mm 128.82 kHz and 58.8 kHz in 9.5 mm$\Phi$$\times$9.5mm, 85.22 kHz and 32.6 kHz in 14.3 mm$\Phi$$\times$14.3 mm, resonant frequency of the AE sensor. The AE sensor of 9.5 mm$\Phi$$\times$9.5mm responded higher than the other coupled vibration mode AE sensor at the partial discharge detection in GIS.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.1-5
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• 1995

In this study, a piezoelectric fan was fabricated using piezoelectric element of 0.13PZN-0.41PZ-0.46PT prepared by extruding method. The sizes of the piezoelectric element and the piezoelectric fan were adjust to utilize commercial ac source(100V, 6OHz). The size of the piezoelectric element was $0.26{\times}19.5{\times}45$mm and the resonant frequency and the electromechanical coupling coefficient were 31.26KHz, 31.58% respectively. The size of the piezoelectric fan was $0.62{\times}19.5{\times}78.5$mm and the maximum displacement was 40mm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.44-44
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• 2007

New inchworm type piezoelectric actuator design, which can reduce the number of the piezoelectric body for manufacturing inchworm type actuator, is suggested in this work. Inchworm type actuator consists of three or more piezoelectric bodies, on the other hand the new-designed inchworm type actuator has only one piezoelectric body. The one piezoelectric body that size is $2\;{\times}\;2\;{\times}\;4\;[mm^2]$ (DWL) has 2 clamping part and 1 extending part. The size of the new-designed actuator with one piezoelectric body is $5\;{\times}\;6\;{\times}\;9\;[mm^2]$ (DWL). The new-designed inchworm type actuator performed the operation at a cycle (6 steps) of $0.3{\mu}m$ per $33.3{\mu}s$ and a generated force of 0.6N.