• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.42-47
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• 2000

Long-wavelength infrared (LWIR) detectors made of self-assembled quantum dots embedded in the channel region of high electron mobility transistor (HEMT) is demonstrated. Above 180 K, the detector shows low dark currents due to strong confinement effect of electrons in InAs quantum dots and exhibits the broad spectral response ranging from 7 mm to 11 mm. The peak detectivity ($D^*$) of $1.93{\times}10^{10}cmHz^{1/2}/W$ is obtained at 9.4 mm. The photocurrent characteristics as a function of applied bias are similar to that of normal FETs, while the photocurrent decreases as the applied electric field exceeds $2{\times}10^3V/cm$ because of the increased dark current.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.87-90
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• 2014

The effects of electric field frequency on the ac electrical treeing phenomena in an epoxy/reactive diluent/layered silicate (1.5 wt%) were carried out, in needle-plate electrode arrangement. A layered silicate was exfoliated in an epoxy base resin, by using our ac electric field apparatus. To measure the treeing propagation rate, constant alternating current (AC) of 10 kV with three different electric field frequencies (60, 500 and 1,000 Hz) was applied to the specimen, in needle-plate electrode arrangement, at $30^{\circ}C$ of insulating oil bath. As the electric field frequency increased, the treeing propagation rate increased. At 500 Hz, the treeing propagation rate of the epoxy/PG/nanosilicate system was $0.41{\times}10^{-3}$ mm/min, which was 3.4 times slower than that of the epoxy/PG system. The electrical treeing morphology was dense bush type at 60 Hz; however, as the frequency increased, the bush type was changed to branch type, having few branches, with very slow propagation rate.

• Journal of International Society for Simulation Surgery
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• v.2 no.2
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• pp.64-66
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• 2015

Purpose : In this paper we proposed cascade feature filter and projection method for rapid human face recognition for the large-scale high-dimensional face database. Materials and Methods : The relevant features are selected from the large feature set using Fast Correlation-Based Filter method. After feature selection, project them into discriminant using Principal Component Analysis or Linear Discriminant Analysis. Their cascade method reduces the time-complexity without significant degradation of the performance. Results : In our experiments, the ORL database and the extended Yale face database b were used for evaluation. On the ORL database, the processing time was approximately 30-times faster than typical approach with recognition rate 94.22% and on the extended Yale face database b, the processing time was approximately 300-times faster than typical approach with recognition rate 98.74 %. Conclusion : The recognition rate and time-complexity of the proposed method is suitable for real-time face recognition system on the large-scale high-dimensional face database.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.91-93
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• 1989

x $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$, (0.05$\leq$x$\leq$0.30) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1200{\sim}1300[^{\circ}C]$, 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.30PSS-0.20PT-0.50PZ specimens were 372, 190[$^{\circ}C$]. The pyroelectric coefficient, figure of merits for pyroelectric current and detectivity of the 0.25PSS-0.25PT-0.50PZ specimens had the good values, $5.41{\times}10^{-8}[C/cm^{2}K]$, $27.72{\times}10^{-12}[Ccm/J]$, $7.65{\times}10^{-10}{Ccm/J]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.9-13
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• 2004

In this paper, evaluation of physical properties about dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC, DMPC using pressure stimulus. As a result, the changed surface pressure, displacement current and the transition forms of dipole moment of phospolipid monomolecular in area per molecular by pressure stimulus were conformed well. It was known that the monolayers by linear relationship for decision of dielectric relaxation time between compressure speed and molecule area By according to the linear relationship relation get that frictional constant, DLPC was $1.89{\times}10^{-19}$[Js] and DMPC was $0.722{\times}10^{-19}$[Js]. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

• Journal of Electrical Engineering and Technology
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• v.8 no.4
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• pp.850-855
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• 2013

This paper proposes a novel design for a compact, high-isolation WCDMA indoor repeater antenna. The proposed antenna consists of a patch antenna and metamaterial absorber. The required WCDMA bandwidth is obtained by utilizing the coupling between the main and the parasitic patches. In addition, high isolation is achieved using the metamaterial absorber, which has an absorption of about 98% at 2.1 GHz. Overall, the proposed antenna has a gain of over 7 dBi, a Voltage Standing Wave Ratio (VSWR) of less than 2, more than 85 dB of isolation between the service and donor antennas over the WCDMA band and a total volume of the proposed antenna only $70mm{\times}70mm{\times}43.8mm$.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.83-86
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• 2010

The transparent electrode properties of ITO films deposited by RF magnetron sputtering with process pressure were investigated. The ITO thin films was deposited on a glass substrate using a target with 3in diameter sintered at a ratio of $In_2O_3$ : $SnO_2$ (9 : 1). 200-nm-thick ITO thin films were manufactured by various process pressures ($2.0{\times}10^{-2}$, $7.0{\times}10^{-3}$ and $2.0{\times}10^{-3}$ Torr). The optical transmittance and resistivity of the deposited ITO thin films showed a relatively satisfactory result under $10^{-2}$ Torr. For high process pressure, the optical transmittance was below 80%, while for low process pressure, the optical transmittance was above 85%. As a result of of mobility, resistivity and carrier concentration by Hall measurement, we obtained satisfactory properties to apply into a transparent conducting thin film.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.6
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• pp.2734-2747
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• 2018

In this study, a novel fractal ring antenna with a compact size of $24{\times}9{\times}0.8mm^3$ was configured using three iterations. Low profile, circular polarization, and measured operating bands (4.5-6.5 GHz) meet specifications of the upper band used in Wi-Fi and WiMAX applications. The antenna featured, stable radiation properties, especially gain and efficiency, in the notched band (92%). In deep, the antenna impedance, reflection coefficients, surface current distribution and circular polarization for the three iterations had been studied to improve the process of antenna design and its radiation characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.