• The Korean Journal of Ceramics
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• 제6권4호
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• pp.380-384
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• 2000

Crystal structure of $Ba_5-5X$Y$_10/3$Nb$_10$O$_30$ was tried to determine by Rietveld analysis using powder X-ray diffraction data. This compound has tetragonal tungsten bronze (TTB) structure with general formula, (Al)$_2$(A2)$_4$(B1)$_2$(B2)$_8$(O1)$_8$(O2)$_8$(O3)$_4$(O4)$_2$(O5)$_4$(O6)$_4$. However, it was difficult to determine the distribution of Ba and Y in Al and A2 sites by the analysis only. Combination of Rietveld analysis and site potentials calculation as well as lattice energy calculations helped to determine the distribution. As the result, it was clarified that $Ba^2+$ cations occupy A2 (pentagonal tunnel site) and $Y^3+$ cations occupy Al (cubic site). The distribution of cations at each site coincides with the distribution estimated by the difference of ionic radii. This supports the formation condition of TTB which was proposed in our previous report. $Ba_5-5X$Y$_10X/3$Nb$_10$O$_30$ shows ferroelectric characteristics. In this compound, remanent polarization decreases slightly with the composition X. On the other hand, the result of crystal structure determination reveals that atomic positions along c-axis for A1, A2, B1 and B2 cations are also decreased with the composition X. This would suggest that the dependence of remanent polarization on composition X is derived by the dependence of atomic coordinates on composition X.

• 한국세라믹학회지
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• 제38권12호
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• pp.1167-1173
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• 2001

텅스텐브론즈 구조를 가지는 Sr$_{x}Ba_{1-x}Nb_{2}O_{6}$(SBN) (0.3$\le$x$\ge$0.7) 세라믹스를 고상반응법으로 합성하고 Sr/Ba의 비에 따른 유전특성을 조사하였다. SBN 세라믹스는 Sr/Ba의 비가 증가함에 따라 상전이 온도는 낮아지고 상전이 온도에서의 최대 유전율은 증가하였다. 또한 SBN 세라믹스는 Sr 함량에 따른 relaxor 거동을 정량화하여 평가하였는데, Sr/Ba의 비가 증가할수록 유전율은 더욱 완만해지는 것을 관찰할 수 있었다. 이러한 실험 결과를 텅스텐브론지 구조를 가진 SBN 세라믹스의 결정구조 관점에서 해석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.739-743
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• 2003

[ $Ba_2NaNb_5O_{15}$ ], hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Nb and Na have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 500nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where unwanted phases were always formed at the stoichiometric BNN composition. However, the unwanted phases decreased with the increase of excess Nb content, and the single phase (tetragonal tungsten bronze structure) BNN thin film was obtained when the niobium content reached some point. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.272-275
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• 2000

Starting from the stoichiometric composition of $K_2$CO$_3$: Li$_2$CO$_3$: Nb$_2$O$_5$=3 : 2 : 5 with the mole ratio, $K_3$LiNb$_6$O$_17$ 17/ single crystals were grown using the Czochralski method. Although the starting melt composition corresponds to the $K_3$Li$_2$Nb$_5$O$_15$ crystals, the chemical composition of the as grown crystals appears to be $K_2.95$Li$_1.33$Nb$_6.17$O$_17$ or $K_2.60$Li$_1.17$Nb$_{5.44}$ 5.44/O$_{15}$ which relatively contain fewer Li ions than $K_3$Li$_2$Nb$_5$O$_15$ crystals. We investigated the influence of the deficiency of the Li ions in the tetragonal tungsten bronze structure through the measurements of DE loop, temperature dependent dielectric constant, differential thermal analysis and temperature dependent X-ray diffraction pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.98-102
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• 2003

$Ba_2NaNb_5O_{15}$, hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Na and Nb have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 450nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where low temperature phase was always formed at the stoichiometric BNN composition. However, the amount of low temperature phase decreased with the increase of excess Nb content, and the single phase (orthorhombic tungsten bronze structure) BNN thin film was obtained at the temperature as low as $750^{\circ}C$ for samples with excess niobium. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 한국결정성장학회지
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• 제7권3호
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• pp.384-392
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• 1997

레이저의 파장을 변환시키는 비선형광학 재료인 potassium lithium niobate(KLN) 단결정은 상온에서 정방형 tungsten-bronze 구조를 갖는 강유전체이다. 결정성장이 매우 어렵고 성장된 결정을 냉각하는 과정에 생기는 균열에 의해 고품질의 단결정을 얻기가 쉽지 않았다. 결정성장 도중에 생기는 용액의 증발에 의한 조성의 변화를 알아보고자 열중량 분석을 행하였는데 결정성장 온도보다 약 1$0^{\circ}C$ 정도 높은 $1000^{\circ}C$에서 휘발은 $1.46{\times}10^{-5}$g/ ($\textrm{cm}^2$hr)로 미량이었다. 백금판을 핵생성의 자리로 사용하고 온도에 요동을 주며 서냉을 하여 결정을 성장시키는 방법을 사용하여 좋은 품질의 비교적 대형인 1 cm 정도의 KLN 단결정을 성장시킬 수 있었다. 상전이 온도는 $490^{\circ}C$로 앞서 보고된 것보다 고온이었다. OH- 밴드에 의한 광학적 이방성이 IR 영역에서 존재하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.393-394
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• 2005

SBN25 박막을 씨앗층으로 사용하여 이온빔으로 증착한 SBN60/SBN25 다층박막에 대하여 결정화 및 배향 특성을 고찰하였다. 기판은 Pt(111)/TiO2/SiO2/Si(100) 웨이퍼 (Pt 두께 200nm)를 사용하였으며, 약 3000${\AA}$으로 증착한후 650~$750^{\circ}C$에서 후열처리를 하였다. 제작된 박막의 증착조건 및 열처리 조건에 따른 결정화특성 변화에 대하여 연구하였으며, SBN 박막을 MFM 구조의 박막커패시터로 제조하여 강유전특성을 측정하였다.