• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.430-434
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• 2002

We present the magnitude of terahertz electromagnetic pulses when femtosecond laser pulses are moving along to a dipole antenna. The dipole antenna chip has maximum 4.7 nA THz current, generated at 11 DC volt. This current is 3.4 times bigger than the current of a $300{\mu}{\textrm}{m}$ separated transmission line structure chip that has 70 DC volt. We also apply an AC square wave voltage to the dipole antenna from 0.1 volt to 10 volt for binary signals using the terahertz electromagnetic pulses.

• Electronics and Telecommunications Trends
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• v.38 no.6
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• pp.107-118
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• 2023

Sixth-generation (6G) networks may allow to evolve from everything connected to everything sensed. Integrated sensing and communications (ISAC) requires the higher frequencies, wider bands, and more advanced antenna technology offered by 6G technology. We analyze advanced beamforming techniques to overcome the poor propagation characteristics of millimeter and terahertz waves as well as new waveforms designed to include sensing. This paper is intended to provide communication researchers with short summaries of ISAC, use cases, and standardization initiatives as guidelines for exploring new research and development directions.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.569-575
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• 2013

In this paper, we present a photonic approach for generating highly stable coherent sub-terahertz (THz) signals for wireless communications. As proof-of-concept we transmit data at 100 GHz carrier frequency using on-off keying modulation and heterodyne detection. The sub-THz carrier signals are generated by photo-mixing two optical carrier signals at different frequencies, extracted from an optical frequency comb. We introduce a novel system to stabilize the phase of the optical carrier signals. Error-free transmission is successfully achieved up to a bit rate of 8.5 Gbit/s at 100 GHz.

• Current Optics and Photonics
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• v.3 no.4
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• pp.342-349
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• 2019

We present a theoretical research concerning terahertz (THz) wave generation with $KTiOPO_4$ (KTP) by collinear phase matching (CPM) stimulated polariton scattering (SPS). Both CPM and corresponding nonzero nonlinear coefficients can be simultaneously realized with $s{\rightarrow}f+f$ in yz plane, $s{\rightarrow}f+s$ with ${\theta}$ < ${\Omega}$ in xz plane and $s{\rightarrow}f+f$ with ${\theta}$ < ${\Omega}$ in xz plane. The effective nonlinear coefficients including electronic nonlinearities and ionic nonlinearities are calculated. Based on the parameter values of refractive indices, absorption coefficients and effective nonlinear coefficients, we simulate THz wave intensities generated with CPM SPS by solving coupled wave equations and give the relationship among the maximum THz wave intensity, optimal crystal length and the angle ${\theta}$. The calculation results demonstrate that CPM SPS with KTP can generate THz waves with high intensities and quantum conversion efficiencies.

• Electronics and Telecommunications Trends
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• v.24 no.5
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• pp.119-132
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• 2009

새로운 전파자원으로서 초고속 무선통신뿐만 아니라 분광, 센싱, 이미징 등 여러 분야에서 다양한 응용이 기대되는 연속 밀리미터파와 테라헤르츠-파에 대한 발생 및 응용기술을 논하였다. 밀리미터파의 경우 전자소자를 이용한 방법을 주로 사용하지만, 테라헤르츠-파는 전자 및 광기술을 모두 사용하여 발생시킬 수 있다. 본 글에서는 광학적 방식을 이용한 연속 밀리미터/테라헤르츠-파의 발생기술과 이를 이용한 응용기술에 대하여 논하였다. 최근 고출력 PD의 기술발전에 따라 광학적 발생방식의 밀리미터/테라헤르츠-파를 이용한 CW 분광 측정이 유용할 것으로 보인다. 현 단계에서 1THz에서의 최대 가용 출력은 약 $10{\mu}W$ 정도이나, 포화전류와 열 관리 문제를 해결하고 PD 성능의 개선을 함으로써, 단일 소자에서 1THz에 대한 최대 가용출력이 $100{\mu}W$ 수준이 될 것으로 기대된다. 연속 밀리미터/테라헤르츠-파 분광법은 더욱 정밀하고, 다양하며 경제적인 분광 시스템 기술에 크게 기여할 것으로 전망된다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.407-410
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• 2018

As the operating frequency of an electromagnetic wave increases, the maximum output and wavelength of the wave decreases, so that the size of the circuit cannot be reduced. As a result, the fabrication of a circuit with high power (of the order of or greater than kW range) and terahertz wave frequency band is limited, due to the problem of circuit size, to the order of ${\mu}m$ to mm. In order to overcome these limitations, we propose a source design technique for 0.1 THz~0.3 GW level with cylindrical shape (diameter ~2.4 cm). Modeling and computational simulations were performed to optimize the design of the high-power electromagnetic sources based on Cherenkov radiation generation technology using the principle of plasma wakefield acceleration with ponderomotive force and artificial dielectrics. An effective design guideline has been proposed to facilitate the fabrication of high-power terahertz wave vacuum devices of large diameter that are less restricted in circuit size through objective verification.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.191-197
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• 2006

We analyze the self-pulsation(SP) characteristics due to mode beating of two modes emitted in a multi-section complex-coupled (CC) DFB laser composed of two DFB sections and a phase control section between them. SP frequency due to mode beating of the two modes is determined by the difference of grating periods in the two CC DFB regions. As the difference of grating periods in the two CC DFB regions increases, the SP frequency increases from very low frequency to the THz region. In the case of a mode which is not located in the stop band of the other DFB region, the mode propagates into the other DFB region without a high reflection, so that output powers emitted in a multi-section CC DFB laser have high modulation indexes due to the large interaction between the two modes.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.