• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.1-390.1
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• 2016

The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.529-534
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• 2008

The hydrogen gas sensing properties of a zinc oxide nanowire structure were studied. Porous zinc oxide nanowire structures were fabricated by oxidizing zinc deposited on a single-wall carbon nanotube (SWNT) template. This revealed a porous ZnO-SWNT composite due to the porosity in the SWNT film. The gas sensing properties were compared with those of zinc oxide thin films deposited on SiO2/Si substrates in sensitivity and operating temperature. The composite structure showed higher sensitivity and lower operating temperature than the zinc oxide film. It showed a response even at room temperature while the film structure did not.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.220-221
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• 2007

금속 촉매 성장 (Metal-induced growth) 를 이용하여, 마이크로 사이즈의 결정질 (Microcrystalline) 박막 실리콘 (Silicon, Si)을 성장하였다. 금속 촉매로서는 코발트, 니켈, 코발트/니켈 복합물질(Co, Ni, or Co/Ni) 이 사용되었으며, 실리콘과 반응하여 실리사이드 (Silicide) 층을 형성한다. 이러한 실리사이드 층은 실리콘과 격자 거리가 유사하여 (Little lattice mismatch), 그 위에 실리콘 박막을 성장하기 위한 모체 (Template) 가 된다. XRD (X-ray diffraction) 분석을 통하여, 실리사이드 ($CoSi_2$ or $NiSi_2$) 의 형성과 성장된 박막 실리콘의 결정성을 연구하였다. 이러한 박막을 이용하여, 쇼트키 태양전지 (Schottky Solar cell) 에 응용하였다. 코발트/니켈 복합물질을 이용하였을 경우에 10.6mA/$cm^2$ 단락전류를 얻었으며, 이는 코발트만을 이용한 경우보다 10 배만큼 증가하였다. 이러한 실리사이드를 매개로한 박막 실리콘의 성장은 공정상에서의 열부담 (Thermal budget) 을 줄일 수 있으며, 대면적 응용에 큰 가능성을 가지고 있다.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.282-283
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• 2005

Ion beam assisted deposition(IBAD) technique was used to produce biaxially textured polycrystalline MgO thin films for high critical current YBCO coated conductor. Hastelloy tapes were continuous electropolished with very smooth surface for IBAD-MgO deposition, RMS roughness of Hastelloy tape values below 2 nm and local slope of less than $1^{\circ}$. After the polishing of the tape an amorphous $Y_2O_3$ and $Al_2O_3$ are deposited Biaxially textured MgO was deposited on amorphous layer bye-beam evaporation with a simultaneous bombardment of high energy ions. We had developed the RHEED to measure in-situ biaxial texture of film surface as thin as tens angstrom. And also ex-situ characterization of buffer layers was studied using XRD and SEM. The full-width at half maximum(FWHM) out of plane texture of IBAD-MgO template is $4^{\circ}$.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Journal of the Korean Applied Science and Technology
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• v.21 no.4
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• pp.345-351
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• 2004

Highly ordered pure-silica MCM-41 materials possessing well-defined morphology have been successfully prepared with surfactant used as a template. The fabrication of mesoporous silica has received considerable attention due to the need to develop more efficient materials' for catalysis, separations, and chemical sensing. The surface modified MCM-41 was used as anadsorbent for biomolecules. Silica-supported organic groups and DNA adsorption on surface modified MCM-41 were investigated by FT-IR and UV-Vis spectrometer, respectively. The use of MCM-41 as the modification of electrode surfaces were investigated electrochemical properties of metal mediators with biomolecules. The modified ITO electrodes increased peak currents for a redox process of $[Ru(bpy)_3]^{2+}$ relative to the bare electrode. The electrochemical detection of DNA by cyclic voltammetry when the current is saturated in the presence of the mediator appeared more sensitive due to a higher catalytic current on the MCM-41 supported electrodes modified by carboxylic acid functional groups. The carboxyl or amine groups on the surface of MCM-41 interact and react with the $-NH_2$ groups of guanine and backbone, respectively. Highly ordered mesoporous materials with organic groups could find applications as DNA sensors.