• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1997년도 제26회 추계학술대회
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• pp.93-99
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• 1997

High Temperature wear behavior of plasma sprayed ZrO$_2$ and MoS$_2$, $Fe_2O_3$ coatings were investigated for high temperature wear resistance applications. The MoS$_2$, $Fe_2O_3$ added powders containing 2.5, 5.0, 7.5, 10.0 mol% of $MoS_2$, $Fe_2O_3$ for plasma spray were made by spray drying method. Wear test were performed at temperature ranges from room temperature to 600$\circ$C. The microstructural change of coatings and the worn. surface were examined by SEM and XRD. In ZrO$_2$ coating, the coefficient of friction and wear amount of room temperature to 400$\circ$C was increased with temperature and decreased with temperature over 400$\circ$C. The coefficient of friction and wear amount of MoS$_2$ added coatings were increased with temperature, but those of $Fe_2O_3$ added coatings had lower coefficient of friction and higher wear resistance than ZrO$_2$ coating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.587-590
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• 2000

This paper presents the characteristics of metal thin-film pressure sensors. The micro pressure sensors consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si wafer an aluminium interconnection layer. The fabricated micro pressure sensors shows a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.16~1.21 mV/V.kgf/$\textrm{cm}^2$ in the temperature range of 25~l0$0^{\circ}C$ and the maximum non-linearity is 0.21 %FS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.152-155
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• 1996

Platinum thin films were deposited on $Al_2$O$_3$substrate by DC magnetron sputtering for RTD(Resistance Thermometer Devices) temperature sensors. We made Pt resistance pattern on $Al_2$O$_3$substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied lineally within the range of measurement temperature. At annealing temperature of 100$0^{\circ}C$, annealing time of 240min and thin film thickness of 1${\mu}{\textrm}{m}$, we obtained Pt-RDT TCR value of 3825ppm/$^{\circ}C$ closed to the Pt bulk value.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 전기학술대회논문집
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• pp.1102-1107
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• 2005

The analysis of the thermal boundary resistance is very important in the both cases of microscale and macroscale systems because it plays a role of thermal barrier against a heat flow. Especially, since fairly large heat energy is generated in microscale or nanoscale systems with electronic chips, the thermal boundary resistance is a key factor to guarantee the performance of those devices. In this study, the transfer of the oscillator's motion information with 2 degrees of freedom is investigated for clarifying the mechanism of a thermal boundary resistance. We found that the transfer of the oscillator's motion information is defined as a cross-correlation coefficient and the magnitude of it determines the temperature jump over a solid interface. That is, the temperature jump over an interface increases as the magnitude of a cross-correlation coefficient decreases and vice versa.

• 한국화재소방학회논문지
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• 제28권1호
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• pp.26-30
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• 2014

보상식 화재 감지기는 일정한 온도 상승률 이상으로 빠르게 상승하는 경우에 작동하는 차동식 화재 감지기의 기능과 정온점에 이르렀을 때 작동하는 정온식 화재 감지기의 기능을 모두 가진 감지기다. 이 화재 감지기는 정온점 이하에서 발생하는 화재를 감지하지 못하는 정온식 화재 감지기의 단점과 불꽃없이 천천히 타는 현상과 같이 천천히 열이 증가하는 화재를 감지하지 못하는 차동식 화재 감지기의 단점을 보완하기 위해 개발된다. 이것을 위해 우리는 이 감지기의 센서로 금속-절연체 전이 임계온도센서를 이용했는데 이 센서의 감도를 결정하는 저항온도계수가 $55^{\circ}C$일 때 14.15%로써, 서미스터(약 0.5%)보다 큰 값이다. 이 센서는 하나의 센서가 정온점 이하에서는 차동 기능, 정온점 이상에서는 정온 기능을 모두 가진다.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.269-274
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• 2022

We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• 한국기계가공학회지
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• 제20권11호
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• pp.121-126
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• 2021

In this study, the effect of thermal contact resistance between pin-channel tubes on the heat transfer characteristics was analytically examined around the channel tubes with the pins attached to two consecutive arranged channel pipes. The numerical results showed that the heat transfer coefficient decreased geometrically as the thermal contact resistance increased, and the corresponding temperature change on the contact surface increased as the thermal contact resistance increased. The thinner the pin, the more pronounced the geometric drop in the heat transfer coefficient. It was confirmed that the higher the height of the pin, the higher was the heat transfer coefficient, however, the greater the size of the thermal contact resistance, the smaller was the heat transfer coefficient. It was found that the temperature change in the inner wall of the channel tube did not significantly affect the heat transfer characteristics owing to the thermal contact resistance. Furthermore, the velocity of air at the entrance of the channel tube was proportional to the heat transfer coefficient due to a decrease in the convective heat resistance corresponding to an increase in the flow rate.