• Proceedings of the Korean Society of Medical Physics Conference
• /
• 2002.09a
• /
• pp.471-473
• /
• 2002

Public concerns associated with the electromagnetic field (EMF) exposures from mobile phones on human body are increased. Although studies on the effects of the EMF exposures on human have been carried out for a long time, it is not proved yet whether the EMF effect is harmful or not. Based on the scientific results by experts, EMF exposure limits have been regulated as a precautionary approach on the assumption that the EMF effect may be harmful. It is well known that absorbed EMF can be transformed into heat within biological tissues and that thermal effects are related with the specific absorption rate (SAR) distribution. However, the relative magnitude and distribution of the energies are not well defined. Although there is comprehensive information of the thermal effects, most of them come from animal and in vitro studies. Considerable efforts have been made to analyze the EMF absorption model while the actual temperature in the human body has been rarely measured. Temperature changes on the face of a healthy male volunteer were studied. A digital mobile phone of 1.8GHz was used. A digital infrared imaging system (IRIS-5000, Medicore, Seoul, Korea) was applied to take infrared pictures of the face every minute while the volunteer talked over the mobile phone for 20 minutes. The specification of the imaging system was as follows: Temperature resolution = 0.1$^{\circ}C$; Range of temperature measurement = 17～40$^{\circ}C$; Pixel size = 0.9mm ${\times}$ 0.9mm; Frame time = 2.6s; Active temperature of detector = 77$^{\circ}$K. The result showed that temperature of the ear region was increased during the phone call and the region of the temperature increase on the face was expanded as the phone call time increased. Further study is necessary to investigate the temperature rise analytically and quantitatively.

• Journal of Biomedical Engineering Research
• /
• v.32 no.2
• /
• pp.127-133
• /
• 2011

Arteria radialis is a branch of the brachial artery extending down the forearm around the wrist where it closes to skin surface. In the oriental medicine, the skin above arteria radialis has an important role because oriental medicine practitioners put their finger tips on the area, and diagnose patient's health conditions by feeling the pulsation of the arterial contraction. The finger tip diagnostic method relies on subjective decision of the practitioner; and there is a need to develop an objective diagnostic modality. The pulsation of the arterial contraction appears not only a movement on the site but also as temperature fluctuation due to pulsatile feeding of warmer blood. The goal of this study is to demonstrate a feasibility of using an infrared camera quantitatively to detect the temperature fluctuation on the skin. Clinical important three different areas, called chon, gwan, chuk, near a wrist where the arteria radialis reaches close to skin surface are marked with small pieces of surgical tape. A high-speed and high-resolution infrared camera with a 3 cm of field of view measures these areas for 10 second at 200 frames per second with a 320*240 pixel size. The pulsatile temperature fluctuation is calculated after passing a band pass filter to remove any stationary temperature over 10 second. The temperature fluctuation of a healthy male volunteer is measured at a room temperature as a control, and is compared with another measurement performed after 20 minutes staying in a room at a 40 degree Celsius. This comparison is repeated for three times, and indicates that the fluctuation increases after staying 20 minutes in the warm room. This increase becomes smaller when the person stays in the warm room with an acupuncture treatment that decreases body temperature. So that an objective diagnostics on the site may become feasible.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.313-313
• /
• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.20 no.5
• /
• pp.445-450
• /
• 2000

The integrity of the turbine rotors can be assessed by measuring reversible permeability and Vickers hardness of the aged rotors at service temperature. The measurement system of reversible permeability, which measured by applied alternating perturbing magnetic field, was constructed in order to evaluate material degradation, nondestructively. The test specimen was 1Cr-1Mo-0.25V steel used widely for turbine rotor material, and the specimens were prepared by the isothermal heat treatment at $630\;^{\circ}C$. The reversible permeability of the test materials were measured at room temperature. The peak interval of reversible permeability and Vickers hardness decreased with the increase of degradation. The degradation of test material may be determined nondestructively by the lineality of Vickers hardness and the peak interval of reversible permeability.

• Progress in Superconductivity and Cryogenics
• /
• v.16 no.1
• /
• pp.9-13
• /
• 2014

Effects of neutron irradiation on the superconducting properties of the undoped $MgB_2$ and the carbon(C)-doped $MgB_2$ bulk superconductors, prepared by an in situ reaction process using Mg and B powder, were investigated. The prepared $MgB_2$ samples were neutron-irradiated at the neutron fluence of $10^{16}-10^{18}n/cm^2$ in a Hanaro nuclear reactor of KAERI involving both fast and thermal neutron. The magnetic moment-temperature (M-T) and magnetization-magnetic field (M-H) curves before/after irradiation were obtained using magnetic property measurement system (MPMS). The superconducting critical temperature ($T_c$) and transition width were estimated from the M-T curves and critical current density ($J_c$) was estimated from the M-H curves using a Bean's critical model. The $T_cs$ of the undoped $MgB_2$ and C-doped $MgB_2$ before irradiation were 36.9-37.0 K and 36.6-36.8 K, respectively. The $T_cs$ decreased to 33.2 K and 31.6 K, respectively after irradiation at neutron fluence of $7.16{\times}10^{17}n/cm^2$, and decreased to 22.6 K and 24.0 K, respectively, at $3.13{\times}10^{18}n/cm^2$. The $J_c$ cross-over was observed at the high magnetic field of 5.2 T for the undoped $MgB_2$ irradiated at $7.16{\times}10^{17}n/cm^2$. The $T_c$ and $J_c$ variation after the neutron irradiation at various neutron fluences were explained in terms of the defect formation in the superconducting matrix by neutron irradiation.

• Composites Research
• /
• v.27 no.4
• /
• pp.146-151
• /
• 2014

In this study, the experimental study has been performed by varying the polarization of the electric field and impact force to check the piezoelectric characteristics of piezoelectric paint sensor. Piezoelectric paint sensor used in this study is composed of epoxy resin with a hardener and PNN-PZT powder in 1:1 weight ratio. The dimensions of the paint sensor specimen are $40{\times}40{\times}1mm^3$ and regular specimens were made using a mold. The voids are removed from the specimen in the vacuum desiccator. Both upper side and bottom side of the paint sensor were coated with silver paste for making an electrode and then dried at room temperature for a day. The poling treatment has been carried out under controlled conditions of the electric field in order to check the effect of piezoelectric sensitivities, while the poling temperature was fixed at room temperature and the poling time was set to 30 min. The piezoelectric sensitivities have been measured by comparing output voltage from paint sensor with output force from impact hammer when the impact hammer hits the paint sensor. In result, the effect of the electric field has been evaluated for the sensitivity and describe the result.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.37 no.8
• /
• pp.999-1005
• /
• 2013

A fiber Bragg grating sensor is considered a smart sensor that shows outstanding performance in the field of structural health monitoring (SHM). It has a powerful advantage, especially that of multiplexing, which enables several parameters to be sensed at multiple points by using a single optical fiber line. Among several parameters, the thermal expansion coefficient and thermo-optic coefficient are required to measure temperature. In previous studies, these were considered constant variables. This study shows that two parameters vary with temperature and newly proposes a temperature function for these two parameters. Specifically, these two parameters were defined as a single variable, and then, it was experimentally verified that this variable is a function of temperature. Finally, it was shown that temperature from RT to $100^{\circ}C$ was precisely measured by using the temperature function that was defined through the experiment.

• KIEAE Journal
• /
• v.12 no.2
• /
• pp.65-75
• /
• 2012

The rapid urbanization caused drastic temperature changes in Korea. Excessive urbanization and development result in unpredictable and abnormal climate change all over the world. These changes are reflected in Korean government policy and research about cities, such that various research endeavors have been undergone recently. There are lots of ways to improve the urban environment; the easiest way to solve the urban heat effect problem is to make green spaces within the city. Even though we can't enlarge green spaces over the city limitlessly, it is desperately need for a methodology to efficiently create green space in limited area. Based on awareness of issues as mentioned earlier, we would like to propose landscaping method that can increase thermal comfort in the same area. For this study, simulating the change of temperature, mean radiant temperature, PMV were done due to number of species planted in apartment complex. To increase the reliability of the simulation, first above all, field measurement for temperature change was performed in apartment complex, where residential building are arranged in the form of ㄷ. And based on this data, Envi-met simulation was performed varying 1-7 kinds of species divided by grass, shrubs, arbor (deciduous, conifers) planted in apartment complex. As a result, there was a change less than $1^{\circ}C$ with the increasing number of species in daytime, but the average radiation temperature about $6-7^{\circ}C$ was reduced. In addition, PMV index was improved by more than 0.5 point. Thermal comfort indicator improved significantly depending on the number of species during the day, on the other hand, there were no significant changes at night. As a consequence, this study has shown that not single-species planting but mixed planting varied the number of species would improve the thermal comfort in the same area of landscaping space at daytime.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.24.1-24.1
• /
• 2009

The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to $750^{\circ}C$, while it was smoothed with more increasing of annealing temperature due to the evaporation of buffer layer. It was found that the roughest surface of buffer layer improved the structural and optical properties of ZnO nanorods. For the post annealing case, the hydrothermally grown ZnO nanorods were annealed with various temperatures ranging from 450 to $900^{\circ}C$. Similarly in the buffer layer annealing case, the post annealing enhanced the properties of ZnO nanorods with increasing of annealing temperature up to $750^{\circ}C$. However, it was degraded with further increasing of annealing temperature due to the violent movement of atoms and evaporation. Finally, the buffer layer annealing and post annealing treatment could efficiently improve the properties of hydrothermally grown ZnO nanorods. The morphology and structural properties of ZnO nanorods grown by the hydrothermal synthesis were measured by atomic force microscopy (AFM), field emission scanning electron microscopy (SEM), and x-ray diffraction (XRD). The optical properties were also analyzed by photoluminescence (PL) measurement.