• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Smart Structures and Systems
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• v.30 no.5
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• pp.521-535
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• 2022

Efficient management of deteriorating civil infrastructure is one of the most important research topics in many developed countries. In particular, the remote displacement measurement of bridges using linear variable differential transformers, global positioning systems, laser Doppler vibrometers, and computer vision technologies has been attempted extensively. This paper proposes a remote displacement measurement system using closed-circuit televisions (CCTVs) and a computer-vision-based method for in-situ bridge bearings having relatively large displacement due to temperature change in long term. The hardware of the system is composed of a reference target for displacement measurement, a CCTV to capture target images, a gateway to transmit images via a mobile network, and a central server to store and process transmitted images. The usage of CCTV capable of night vision capture and wireless data communication enable long-term 24-hour monitoring on wide range of bridge area. The computer vision algorithm to estimate displacement from the images involves image preprocessing for enhancing the circular features of the target, circular Hough transformation for detecting circles on the target in the whole field-of-view (FOV), and homography transformation for converting the movement of the target in the images into an actual expansion displacement. The simple target design and robust circle detection algorithm help to measure displacement using target images where the targets are far apart from each other. The proposed system is installed at the Tancheon Overpass located in Seoul, and field experiments are performed to evaluate the accuracy of circle detection and displacement measurements. The circle detection accuracy is evaluated using 28,542 images captured from 71 CCTVs installed at the testbed, and only 48 images (0.168%) fail to detect the circles on the target because of subpar imaging conditions. The accuracy of displacement measurement is evaluated using images captured for 17 days from three CCTVs; the average and root-mean-square errors are 0.10 and 0.131 mm, respectively, compared with a similar displacement measurement. The long-term operation of the system, as evaluated using 8-month data, shows high accuracy and stability of the proposed system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.436-436
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• 2011

Recently, spintronic devices with submicron structures are widely investigated to take advantage of their unique micromagnetic properties. In this work, we study the temperature dependence of exchange bias in bilayer anti-dot arrays made by depositing Co (40 nm)/Ni (5 nm) ferromagnetic bilayer on Si substrate to form anti-dot arrays with a diameter $1{\mu}m$. The anti-dot patterning was done only for the upper Co layer, while the Ni underlayer was kept unperforated. The temperature dependences of magnetoresistance (MR) and exchange bias were studied along magnetic easy and hard axes. The in-plane MR measurements were performed using a physical-property measurement system (PPMS ; Quantum Design Inc.) at various temperatures. The standard in-line four-point probe configuration was used for the electrical contacts. As temperature was varied, the MR data were obtained in which in-plane field (H=3 kOe) was applied in the directions along the hard and the easy axes with respect to the lattice plane. The temperature dependences of magnetic anisotropy and exchange bias were also studied along the magnetic easy and hard axes. As temperature decreases, the single peak splits into two peaks. While no exchange bias was observed along the magnetic easy axis, the exchange bias field steadily increased with decreasing temperature along the magnetic hard axis. These results were interpreted in connection with the magnetic anisotropy and the effect of the anti-dots in pinning domain wall motion along the respective direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.582-585
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• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the KSR Conference
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• 2007.11a
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• pp.1392-1394
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• 2007

By the examination of data collected by long-term measuring system on high-speed railway bridges, it has been known that the atmospheric temperature may affect the responses of maximum deflection and acceleration of bridge deck. Collected data show a tendency by seasonal factor to that, by the decrease of temperature, the response of acceleration of bridge deck increases, and the response of deflection decreases. To trace the cause of this tendency, parametric analysis on the stiffness of bridge bearing and track ballast has been performed, and the in-site measurement has been achieved in high-speed railway line to understand seasonal influences.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.3
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• pp.395-404
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• 2003

Quantitative data of the temperature and velocity were obtained simultaneously by using liquid crystal tracer. PIV(Particle Image Velocimety) based on a grey-level cross-correlation method was used for visualizing and analysis of the flow field. The temperature gradient was obtained by applying the color-image processing to a visualized image, and a neural-network a1gorithm was applied to the color-to-temperature calibration. This simultaneous measurement was applied to the Rayleigh-Bernard convection. This paper describes the method, and presents the quantitative visualization of Rayleigh-Bernard convection and the effect of aspect ratio and viscosity. Also the experimental results were compared with the numerical results.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.1-5
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• 2012

Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• 한국전산유체공학회:학술대회논문집
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• 2002.10a
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• pp.109-113
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• 2002

Numerical analysis of aerodynamic heating for KPSAM is performed using aerodynamic heating model suitable to KPSAM, which has complex flow field resulting from the spike attached to the dome, such as large separation area and the strong shock/boundary layer interaction region around reattachment point on the dome. The aerodynamic heating model is validated and modified through the comparison between the flight test measurement and the thermal analysis results. TFD temperature sensors are installed on the dome to measure surface temperature during the flight. Computation results, obtained from the heat transfer analysis on the sensors, agree well with flight test data. The aerodynamic heating model provides heat transfer rate into surface as a boundary condition of unsteady 1D/axisymmetric thermal analysis on the missile structure. The axisymmetric thermal analysis using FLUENT is more versatile than the 1D analysis and can be applied to the heating problem related with complex structures and multi-dimensional heat transfer problems such as prediction of temperature rise at contact surface of different materials.