• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1126-1128
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• 1995

In order to investigate the electrical properties for transformer oils due to electron bean irradition, the dielectric properties was made researches by dose of irradition To measure the dielectric loss of irradiated specimen, coaxial cylindrical liquid electrode was used, geometric capacitance was confirmed to 16[pF]. Experiments for measuring the dielectric loss were performed at $20{\sim}120[^{\circ}C]$ in temperature range, $30{\sim}1.5{\times}10^5$[Hz] in frequency range and $300{\sim}1500$[mV] in voltage range and then, the result of experiment for the movement of carrier and the physical constants to contribute dielectric properties of specimen due to electron beam irradiation introduced.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.9-13
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• 1995

The effect of WO$_3$ addition and sintering condition on the electrical properties of SrTiO$_3$ceramic have been investigated. Resistivity and capacitance of grains and grain boundaries were obtained by applying impedance spectroscopy. From the result it could be concluded that the temperature dependance of capacitance of WO$_3$doped specimens were influenced directly by the variation of grain boundary capacitance. It was also found that the dispersion frequency increased as the degree of reduction of the specimen increased. The dispersion frequency characteristics showed discernably that the resistivity of the specimen varied with WO$_3$ content. The dielectric properties were influenced directly by the reduction of the specimens. The dielectric constant of grain boundaries of BL capacitor could be obtained by Cole-Cole plot and was influeneced by the amount of WO$_3$ added.

• Journal of Welding and Joining
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• 제21권1호
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• pp.99-106
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• 2003

This research was aimed to evaluate the material degradation with various microstructures of X20CrMoV121 steel weldment by Advanced Small Punch(ASP) test. Due to the regional limitation on constitutive structures, the minimized loading ball(${\varphi}1.5mm$) and bore diameter of lower die(${\varphi}3mm$) were designed for the ASP test. The micro-hardness test was also performed to assess the mechanical properties with artificial aging heat treatment. Material degradation was estimated by ductile-brittle transition temperature(DBTT). The results obtained from the ASP test were compared with those from conventional small punch(CSP) test and CVN impact test for several weldment microstructures. It was found that the ASP test clearly showed the microstructural dependance on the material degradation in the weldment.

• 전기학회논문지P
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• 제58권4호
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• pp.521-525
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• 2009

Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation. The results show that the DC current of the photovoltaic system are increased along with the increasing values of irradiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.289-292
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• 1995

In this experiment the specimen is selected for epoxy resin used in the molding compound materials for the power semiconductors. The specimen was divided into the two parts. one is a specimen without irradiation, the other is irradiated with electron beam, of which dose is 1[Mrad], 2[Mrad], 4[Mrad], 8[Mrad] and 24[Mrad], respectively. From the analysis for the physical properties of the specimen, the carbonyl group which is asffact the electrical properties is decreased according to increase the dose of the electron beam. In the measurement of dielectric characteristics among the electrical properties, the frequency dependance of the dielectric characteristics is confirmed that its ${\beta}$-peak is represented by one peak due to attribute to the main chain below 50[$^{\circ}C$], and two peak above the temperature 100[$^{\circ}C$].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.929-931
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• 1999

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, ozone gas pressure dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국세라믹학회지
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• 제33권1호
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• pp.35-40
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• 1996

The influence of grain boundary on the electrical properties of WO3-doped SrTiO3 ceramics has been investi-gated. From the result resistivity and capacitance of grains and boundaries were obtained by employing impedance spectrocopy. And the temperature dependance of capacitance of WO3-doped SrTiO3. was influenced directly by the variation of grain boundary capacitance. It was also found by impedance spectroscopy that the dispersion frequency characteristics showed discernibly that the resistivity of the specimen varied with WO3 content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.222-225
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• 2000

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.