• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

• 유체기계공업학회:학술대회논문집
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• 2001.11a
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• pp.419-424
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• 2001

TCV(Temperature control valve by pressure compensation) controls temperature constantly, when it is sending steam or high temperature water to heating device of heat exchanger. For designing TCV, the ratio of piston and hole diameters is one of the important design parameters. Numerical analysis is carried out to elucidate the flow characteristics in the TCV with different port areas of cold and hot waters, using the k-$\epsilon$ turbulence model and Cartesian cut-cell method. Numerical results show that the exit flow rate is mainly affected by pressure distribution in the piston.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.141-147
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• 2017

A pressure sensor in pulse measurement system is a core component for precisely measuring the pulse waveform of radial artery. A pulse sensor signal that measures the pulse wave in contact with the skin is affected by the temperature difference between the ambient temperature and skin surface. In this study, we found experimentally that the signal changes of the pressure sensors and a temperature sensor were caused by the temperature of the wrist surface while the pressure sensor was contacted on the skin surface for measuring pulse wave. To observe the signal change of the pulse sensor caused by temperature increase on sensor surface, Peltier device that can be kept at a set temperature was used. As the temperature of Peltier device was kept at $35^{\circ}C$ (the maximum wrist temperature), the device was put on the pulse sensor surface. The temperature and pressure signals were obtained simultaneously from a temperature sensor and six pressure sensors embedded in the pulse sensor. As a result of signal analysis, the sensor pressure was decreased during temperature increase of pulse sensor surface. In addition, the signal difference ratio of pressure and temperature sensors with respect to thickness of cover layer in pulse sensor was increased exponentially. Therefore, the signal of pressure sensor was modified by the compensation equation derived by the temperature sensor signal. We suggested that the thickness of cover layer in pulse sensor should be designed considering the skin surface temperature.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.63-68
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• 1998

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.177-181
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• 2019

Pressure sensors are used in various industries such as automobiles, airplanes, medical equipment, and coolers. Even if the ambient temperature changes, the measurement is reliable and stable. In this study a diaphragm-type pressure sensor was used to derive a temperature-compensated pressure estimation equation for accurate pressure measurement at $100^{\circ}C$ and $-40^{\circ}C$. To understand the characteristics of the pressure sensor diaphragm with respect to temperature and pressure, experiments were conducted in temperature-variable chamber using FEM analysis to confirm that the influence of temperature effect was nonlinear. Based on the experimental results, a nonlinear method for calculating the pressure by compensating for the error due to temperature was derived. The calculated pressure value is lower than 0.5 % at low and high temperatures, and lower than 0.4 % at $22^{\circ}C$, thereby eliminating the effect of temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.307-314
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• 1988

The thin, square-diaphragm silicon pressure sensor utilizing shear piezoresistance effect was designed and fabricated and its characteristics were examined. The sensor has only one diffused resistor, whereas conventional full-bridge sensor has four. Sensitivity is somewhat lower but temperature compensation is easier than the latter. The proposed sensor was fabricated with only one p-type diffused resistor of the dimension of 113x85\ulcorner\ulcornerlocated near the center of the edge of the diaphragm. The resistor was at 45\ulcornerwith the edge of the diaphragm. The sensitivity of the sensor was 36\ulcorner/V\ulcornermHg and was linear in the pressure range from 0 to 300 mmHg. The temperature coefficient without temperature compensation was 55 ppm/\ulcorner and it was decreased to about 0.17 mmHg/\ulcorner with compensation in the range from 10 to 60\ulcorner.

• Transactions of the Korean Society of Automotive Engineers
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• v.13 no.5
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• pp.96-103
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• 2005

One of the major problems limiting the accuracy of piezoelectric transducers fur cylinder pressure measurements in an internal combustion (IC) engine is the thermal shock. Thermal shock is generated from the temperature variation during the cycle. This temperature variation results in contraction and expansion of the diaphragm and consequently changes the force acting on the quartz in the pressure transducer An empirical equation for compensation of the thermal shock error was derived from consideration of the diaphragm thermal deformation and actual pressure data. The result indicate that the thermal shock equation provides reliable correction based on known surface temperature swing.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.17-24
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• 1996

In order to reduce the offset and its temperature drift by the different properties of the piezoresistors and the residual stress of the piezoresistive pressure sensor, a double Wheatstone-bridge pressure sensor was studied. Because the compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset component, reduction of the offset and its temperature drift was realized by the mathematical subtraction of the output of two bridges. It was configured the compensation of the offset and its temperature drift. By this compensation method, the offset and its temperature drift were reduced approximately 95% respectively. The sensitivity of the fabricated pressure sensor was $11.7\;mV/Vkg/cm^{-2}$ for $0.9\;kgfcm^{-2}$ full-scale pressure range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.63-70
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• 2008

In this paper, a smart sensor system for the MEMS pressure sensor was developed. A compensation algorithm and programmable calibration circuits were presented to eliminate errors caused by temperature drift of piezoresistive pressure sensors in itself. This system consisted of signal conditioning, calibration, temperature detection, microprocessor, and communication parts and these were integrated into a SOC. A RS-232 interface was employed for monitoring and control of a smart sensor system. The area of fabricated IC is $4.38{\times}3.78\;mm^2$ and a $0.35{\mu}m$ high voltage CMOS process was used. Compensation error for temperature drift of 50 KPa pressure sensors was measured into ${\pm}0.48%$ in the range of $-40^{\circ}C{\sim}150^{\circ}C$. Total power consumption was 30.5 mW.

• 유체기계공업학회:학술대회논문집
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• 2005.12a
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• pp.448-453
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• 2005

Temperature Control Valve (TCV) is one of the useful temperature control devices, which is used to control constant temperature of working fluid in power and chemical plants and domestic water supply systems. TCV is composed of body, cylinder and piston, and the body shape has a symmetrical H-type. In general, it has several inlet and outlet holes, and its shape is like as tubular sleeve. The piston has three rings two rings of the end of piston have the function of controlling inlet flow rate with hot and cold working fluids, the center ring has the function of preventing hot and cold water from intermixing. Consequently, the shapes of piston and cylinder are the main design parameters in the performance of TCV. In this study, numerical analyses were carried out with two different piston and cylinder shapes to investigate the functions as a temperature control valve and the flow characteristics according to piston opening grade in TCV. Using a commercial code, FLUENT, velocity and pressure fields in TCV are obtained under steady, standard $k -{\epsilon}$ turbulence model and no-slip condition.