• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.11-16
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• 1985

The semiconducting ceramics having positive temperature coefficient of resistivity in he family of 0.25mol% $Sb_2O_3$ doped barium titanates were prepared with AST ($4Al_2O_3$.$9SiO_2$.$3TiO_2$) and $MnO_2$ as additives and these electrical properties were investigated. The PTCR characteristic in these ceramic materials was improved by the addition of AST and $MnO_2$ because the addition of AST decreased the room temperature resistivity and controlled grin size due to the formation of a liquid phase during sintering and the addition of $MnO_2$ improved by forming acceptor level on the intergranular layer. On dependence on the switching time as switching temperature was increased the initial power and switching time increased.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.27-31
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• 2008

Due to the increasing need for miniaturization of electronic device, embedded resistor technology using thick film resistance paste to embed resistors currently mounted on the board thus effectively reducing board size, is being extensively researched. In this research, thick film resistor paste having $0.35{\sim}4k{\Omega}/sq$ range of resistivity were fabricated using mixtures of carbon black and epoxy resin. In order to adjust the TCR (temperature coefficient resistivity), TCR modifiers such as Ni-Cr alloy, $SiO_2$ powder were added and were able to improve on TCR value with $100ppm/^{\circ}C$. Finally embedded resistor board using thick film resistance paste were fabricated. Stable resistivity value and reliability results were achieved.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.52-55
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• 2005

Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of $10.5{\mu}{\Omega}cm$ to $2.84{\times}10^{4}{\mu}{\Omega}cm$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of $0{\sim}150^{\circ}C$. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.505-509
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• 2014

In this research, the structural, physical and electrical characteristics of Ni-Fe core chosen to minimize the errors of the Hall current sensors were investigated and Hall current sensor using Ni-Fe core was fabricated. In the result, the fabricated Ni-Fe sample exhibited the maximum hardness about 29.5 GPa and the low friction coefficient about 0.35, and electrical resistivity over $90mOhm{\cdot}cm$. And also Hall current sensor using the fabricated Ni-Fe core showed linear current-voltage properties for DC current at $25^{\circ}C$ temperature.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.234-238
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• 2009

We have investigated the effects of dopant on the thermoelectric properties that $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics fabricated by the conventional solid state reaction method. The Seebeck coefficient of $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics was measured at wide temperature range from 300 K to 673 K. The thermoelectric properties(Seebeck coefficient and electrical resistivity) depend strongly on the kinds of dopants. Sr and Ca dopant decrease the Seebeck coefficient. Density of sintered $La_{0.9}Sr_{0.1}CoO_3$ ceramic at 1523 K was 7.12 $g/cm^2$ and Seebeck coefficient was 35 ${\mu}V/K$ at 663 K. However, the electrical resistivity of the Sr doped sample was low and stable.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.

• Polymer(Korea)
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• v.29 no.1
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• pp.32-35
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• 2005

In this paper, the carbon nanotubes (CNTs) were ozonized and the positive temperature coefficient (PTC) behaviors of CNTs-filled high-density polyethylene (HDPE) conductive composites were studied. The results of element analysis (EA) and FT-IR indicate that the oxygen-containing functional groups on the CNTs surfaces, such as O-H, C-O, and C＝O groups, were increased with the ozonization. Electrical resistivities of the CNTs/HDPE composites were measured by using a digital multimeter. The resistivity of the composites was increased abruptly near the crystalline melting temperature of the HDPE used as matrix, which could be attributed to the destruction of conductive network by the thermal expansion of HDPE. And, the PTC intensity of the CNTs/HDPE composites was increased with the increase of the ozone treatment time. It was probably due to the growing of maximum volume resistivity of the composites induced by the increased oxygen-containing functional groups in the CNTs surfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.