• Title/Summary/Keyword: Temperature coefficient of dielectric constant

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Microwave Dielectric Properties of Low Temperature Co-fired Ceramics with Glass Frit and TiO2 Additives (Glass Frit 및 TiO2 첨가에 따른 LTCC용 마이크로파 유전체의 유전 특성)

  • 윤중락;이석원;이헌용
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.9
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    • pp.942-946
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    • 2004
  • The crystalline and dielectric properties on Al$_2$O$_3$ filled glass frit (CaO-Al$_2$O$_3$-SiO$_2$-MgO-B$_2$O$_3$) with admixtures of TiO$_2$ have been investigated. The dielectric constant value of 7.5 ∼ 7.8, qualify factor value of 700 were obtained for glass frit : Al$_2$O$_3$(50 : 50 wt%) ceramics. Addition of TiO$_2$ less than 5 wt% slightly increased the dielectric constant from 7.8 to 8.8 due to higher dielectric constant of TiO$_2$. With increasing the amount of TiO$_2$ up to 5 wt%, the temperature coefficient of dielectric properties was improved. When the TiO$_2$ 5 wt% were added, dielectric properties were dielectric constant 8.8, quality factor 840 and the temperature coefficient of dielectric 45 ppm/$^{\circ}C$ at a sintering temperature 920$^{\circ}C$.

Microwave dielectric properties of the BSST ceramics with BaO compositional ratio (BSST계 세라믹스의 BaO 조성비에 따른 마이크로파 유전특성)

  • 박인길;정장호;이성갑;이영희
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.45 no.1
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    • pp.81-85
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    • 1996
  • Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

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The Accurate design of a Temperature stable Dielectric Stepped-Impedance Resonator (온도 변화에 안정한 유전체 Stepped-Impedance Resonator의 정확한 설계)

  • 임상규;김덕환안철
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.625-628
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    • 1998
  • This paper presents the design method of a temperature stable stepped-impedance resonator using composite material. In this method temperature coefficient of dielectric constant $(\tau\varepsilon)$ and thermal expansion coefficient $(\alpha1)$ of dielectric material were considered. Ba(Zn1/3Nb2/3)O3 and CaZrO3 as composite material having opposite signs of temperature coefficient of dielectric constant were selected. The length of this resonator for the temperature stability of resonance frequency was calculated at 900MHz, 1.4㎓ and 1.9㎓. It was found that the ratio of the length of positive $\tau\varepsilon$ materal to the length of negative $\tau\varepsilon$ material is constant at various resonance frequencies.

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Microwave Dielectric Properties of $(Pb_{1-x}Ca_x)ZrO_3$ and $(Pb_{0.63},Ca_{0.37-x}M_x)ZrO_3$ (M = Mg, Sr) Ceramics ($(Pb_{1-x}Ca_x)ZrO_3$$(Pb_{0.63},Ca_{0.37-x}M_x)ZrO_3$ 세라믹스의 고주파 유전 특성)

  • 윤중락;이헌용
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.533-540
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    • 1997
  • The microwave dielectric properties of ((P $b_{1-x}$ C $a_{x}$)Zr $O_3$ and (P $b_{0.63}$,C $a_{0.37-x}$ $M_{x}$)Zr $O_3$(M=Mg,Sr) ceramics were investigated. In (P $b_{1-x}$ C $a_{x}$)Zr $O_3$ (X=0.33~0.40) ceramics, high quality factor and small temperature coefficient of resonant frequency were obtain in (P $b_{0.63}$C $a_{0.37}$)Zr $O_3$with perovskite structure. In the case of (P $b_{0.63}$C $a_{0.37-x}$M $g_{x}$)Zr $O_3$ dielectric constant temperature coefficient of resonant frequency increased and quality factor decreased due to increase of polarization of A-O bonding. When replacing Ca ion with Sr ion with large ion radius, polarization decreased with increased of bonding length and thus dielectric constant and temperature coefficient of resonant frequency decreased.decreased.creased.

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Sintering Behavior, Dielectric and Pyroelectric Properties of $(Pb, La)TiO_3$ Ceramics ($(Pb, La)TiO_3$ 세라믹스의 소결 거동 및 유전.초전 특성)

  • 최동구;최시경
    • Journal of the Korean Ceramic Society
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    • v.31 no.8
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    • pp.841-848
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    • 1994
  • The sintering behavior of La-modified PbTiO3 ceramics was investigated in order to improve the poor sinterability of PbTiO3. Addition of La improved the sinterability. It was confirmed that this improvement was due to the decrease in tetragonality ratio c/a of crystal lattice. The variations of dielectric constant and pyroelectric coefficient were measured with temperature. It was observed that with the increase of La content, Curie temperature decreased and dielectric constant at room temperature increased. La-modified PbTiO3 ceramics had smaller pyroelectric figure of merits than those of pyroelectric materials in use. The effects of grain size on dielectric and pyroelectric properties were also investigated. The change of grain size had effect on maximum dielectric constant and pyroelectric coefficient, but is had little effect on pyroelectric figure of merit at room temperature. The closer examination near ferro-paraelectric phase transition temperature revealed that the behavior of phase transition approached a more relaxor character with the increase of La content and the decrease of grain size.

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A Study on the Microwave Dielectric Properties of 0.182BaO-0.818TiOS12T Ceramics (0.182BaO-0.818TiO2 세라믹스의 마이크로파 유전특성에 관한 연구)

  • 박인길;이영희;윤석진;정형진
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.3
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    • pp.442-446
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    • 1994
  • In this study, microwave dielectric properties of 0.182BaO-0.818TiOS12T ceramics were investigated with sintering temperature and annealing time, and the application for the microwave dielectric resonator was studied. In the specimen simtered at 1400[$^{\circ}C$], dielectric constant, unloaded Q and temperature coefficient of resonant frequency had good values of 35.36, 5692, -4.43[ppm/$^{\circ}C$], respectively. The specimen which temperature coefficient of resonant frequency($\tau$f) was vared positive to negative value was selected, thereafter microwave dielctric properties was investigated with annealing time(0~4[hr]) in the fixed annealing temperature of 1350[$^{\circ}C$]. Increasing the annealing time, dielectric constant and unloaded Q were increased and temperature coefficient of resonant frequency was decreased.

Microwave dielectric properties of the 0.15(B $a_0.95$S $r_ 0.05$)O-0.15S $m_2$ $O_3$-0.7TiO $_2$ ceramics (0.15(B $a_0.95$S $r_ 0.05$)O-0.15S $m_2$ $O_3$-0.7TiO $_2$ 세라믹스의 마이크로파 유전특성)

  • 박인길;정장호;배선기;이영희
    • Electrical & Electronic Materials
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    • v.8 no.2
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    • pp.224-228
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    • 1995
  • 0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15S $m_{2}$ $O_{3}$-0.7Ti $O_{2}$ ceramics were fabricated by the mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions. Increasing the sintering temperature from 1300 to 1375[.deg. C], the sintered density was increased from 5.44 to 5.63[g/c $m^{3$]. Increasing the sintering temperature, dielectric constant and quality factor were increased and temperature coefficient of resonant frequency was independent of sintering temperature. In the specimen sintered at 1375[.deg. C], dielectric constant, quality factor and temperature coefficient of resonant frequency were 80.79, 2784(at 3[GHz]), +11.07[ppm/.deg. C], respectively..

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The Microwave Dielectric Properties on Glass Frit Addition of Low Temperature Co-fired Ceramic (Glass Frit 첨가에 따른 LTCC용 마이크로파 유전체의 유전 특성)

  • Yoon, Jung-Rag;Lee, Serk-Won;Lee, Heon-Young;Kim, Jee-Gyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.611-615
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    • 2003
  • The crystalline and dielectric properties on $Al_2O_3$ filled glass frit ($CaO-Al_2O_3-SiO_2-MgO-B_2O_3$) with admixtures of $TiO_2$ have been investigated. The dielectric constant value of $7.5{\sim}7.8$, quality factor value of 700 were obtained for glass frit : $Al_2O_3$ (50 : 50 wt%) ceramics. As the amount of $TiO_2$ increased, temperature coefficient of dielectric constant were decreased.

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Sintering and Microwave Dielectric Properties of $ZnWO_4$ ($ZnWO_4$ 소결특성 및 고주파 유전특성)

  • Lee, Kyoung-Ho;Kim, Yong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.386-389
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    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

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Sintering and Microwave Dielectric Properties of $ZnWO_4$ ($ZnWO_4$ 소결특성 및 고주파 유전특성)

  • 이경호;김용철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.386-389
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    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

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