• Title/Summary/Keyword: Temperature Control Device

검색결과 440건 처리시간 0.034초

압력 평형식 온도 조절 밸브의 유동특성 연구 (A study on the flow charateristics of temperature control valve by pressure compensation)

  • 김태안;김윤제
    • 유체기계공업학회:학술대회논문집
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    • 유체기계공업학회 2001년도 유체기계 연구개발 발표회 논문집
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    • pp.419-424
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    • 2001
  • TCV(Temperature control valve by pressure compensation) controls temperature constantly, when it is sending steam or high temperature water to heating device of heat exchanger. For designing TCV, the ratio of piston and hole diameters is one of the important design parameters. Numerical analysis is carried out to elucidate the flow characteristics in the TCV with different port areas of cold and hot waters, using the k-$\epsilon$ turbulence model and Cartesian cut-cell method. Numerical results show that the exit flow rate is mainly affected by pressure distribution in the piston.

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자기정렬구조를 갖는 칼코겐화물 상변화 메모리 소자의 전기적 특성 및 온도 분포 (Electrical Characteristics of and Temperature Distribution in Chalcogenide Phase Change Memory Devices Having a Self-Aligned Structure)

  • 윤혜련;박영삼;이승윤
    • 한국전기전자재료학회논문지
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    • 제32권6호
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    • pp.448-453
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    • 2019
  • This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

열전소자를 이용한 발광다이오드의 발열 온도 제어 (Control of Heat Temperature in Light Emitting Diodes with Thermoelectric Device)

  • 한상호;김윤중;김정현;김동준;정종윤;김성인;조광섭
    • 한국진공학회지
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    • 제20권4호
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    • pp.280-287
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    • 2011
  • 열전소자를 사용하여 발광다이오드의 방열효과를 조사하였다. 열전소자의 냉각기능인 펠티에 효과(Peltier effect)를 이용하여, 고전력 발광다이오드의 방열과 p-n접합부의 온도를 제어하였다. 정격전류(350 mA)에 대한 고전력(1 W급) 발광다이오드(Light Emitting Diodes: LEDs)의 온도와 p-n접합부 온도는 각각 $64.5^{\circ}C$$79.1^{\circ}C$이다. 열전소자의 입력 전력 0.1~0.2 W에 대하여, LED의 온도와 접합부 온도는 각각 $54.2^{\circ}C$$68.9^{\circ}C$로 낮아진다. 열전소자에 입력 전력을 0.2 W 이상으로 증가할수록, LED의 온도와 접합부의 온도가 상승한다. 이는 열전소자에 의하여 흡수된 열이 LED로 역류하기 때문이다. 따라서 열전 소자의 냉각기능을 유지하기 위하는 열의 역류를 제어하여야 하며, 열의 역류는 LED의 온도와 방열장치의 온도 차가 클수록 커진다.

Nondestructive Detection of Defect in a Pipe Using Thermography

  • Choi, Hee-Seok;Joung, Ok-Jin;Kim, Young-Han
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2005년도 ICCAS
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    • pp.1413-1416
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    • 2005
  • An infrared temperature sensor module developed for the detection of defects in a plate was modified to use in a cylinder. A set of optical fiber leads and a mechanism maintaining sensor-object distance constant were utilized for the modification of the IR sensor module. The detection performance was experimentally investigated, and the measured temperature was also compared with computed temperature distribution. The experimental outcome indicates that the detection of a simulated defect is readily available. The temperature distribution is better for defect detection than that with the previous device. In addition, the measured distribution is comparable to the calculated one using a heat conduction equation. The developed device of defect detection is suitable to be utilized in chemical processes where most of vessels and piping systems are in the shape of a cylinder.

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가속기 저장링 진공 챔버 온도측정용 제어시스템 개발 및 EPICS 적용 (EPICS Based Vacuum Chamber Temperature Control System for PAL Storage Ring)

  • 윤종철;최진혁;강흥식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 D
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    • pp.2652-2654
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    • 2005
  • A vacuum chamber temperature control system of Pohang Accelerator Laboratory (PAL) storage ring is a subsystem upgraded PAL control system, which is based upon Experimental Physics and Industrial Control System (EPICS) [1]. There are two control components, data acquisition system (SA120 data logger), development control system IOC (Input/Output Controller) at the storage ring of PAL. There are 240 vacuum chamber at the storage ring. It was a very important problem to solve how to monitor such a large number of vacuum chamber temperature distributed around the ring. The IOC connect MODBUS/JBUS field network to asynchronous serial ports for communication with serial device. It can simultaneously control up to 4 data acquisition systems. Upon receiving a command from a IOC running under Windows2k through the network, the IOC communicate through the slave serial interface ports to SA120. We added some software components on the top of EPICS toolkit. The design of the vacuum control system is discussed. This paper describes the development vacuum chamber temperature control system and how the design of this system.

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응고/융해 잠열을 이용한 위성용 열제어장치의 실험적 연구 (Satellite Thermal Control Device Enhanced by Latent Heat of the Phase Change Material)

  • 김태수;신윤섭;김택영;서정기;현범석;전형열
    • 한국항공우주학회지
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    • 제44권10호
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    • pp.887-894
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    • 2016
  • 고상-액상 상변화물질(PCM, Phase Change Material)을 이용한 위성부품 열제어장치를 설계 및 제작하였으며 열환경시험을 수행함으로써 온도제어 성능을 분석하였다. 설계온도에 부합하는 n-Hexadecane을 PCM으로 채용하였고, 낮은 열전도도를 보완하기 위하여 내부에 전열휜이 장착된 용기를 Al6061로 제작하였다. 위성에 장착하였을 때와 동일한 작동조건을 확보하기 위하여, 부품과 방열판 사이를 열관으로 연결하였으며 열관의 단열부가 관통하도록 PCM 열제어장치를 설치하였다. 동일한 모양과 부피의 열적완충질량(TBM, Thermal Buffer Mass)도 제작하여, 주기적인 가열-냉각 실험을 수행하였다. 실험결과 상변화 잠열에 의한 PCM의 열제어 성능을 확인할 수 있었으며, TBM에 비하여 질량과 보온히터의 소모전력을 절감할 수 있음을 확인하였다.

팬을 이용한 LED조명 시스템의 온도 제어 (Temperature Control for LED with fan circulated air-cooling system)

  • 최형식;윤종수;임태우;서해용
    • Journal of Advanced Marine Engineering and Technology
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    • 제34권8호
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    • pp.1100-1106
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    • 2010
  • LED는 온도가 일정이상 올라가면 효율이 떨어지고 수명이 짧아지는 단점이 있다. 본 연구는 이러한 LED의 효율적인 온도제어에 대한 것이다. LED의 방열을 위해 방열판과 팬을 사용하고 시스템의 온도제어는 원칩 마이크로프로세서와 PID제어를 통해 원하는 온도를 제어할 수 있음을 실험을 통해 확인한다. 궁극적으로 팬을 냉각장치로 사용하고 이를 잘 제어하면 LED 시스템 구동전력의 약 2%만을 사용하여 적절한 조도와 온도를 유지하는 성능을 얻을 수 있음을 제어실험을 통해 확인하였다.

Thermal Stress Simulation of Mass Concrete Using Thermal Stress Device

  • 무하마드나시르;김진근
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2006년도 춘계학술발표회 논문집(I)
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    • pp.474-477
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    • 2006
  • To predict thermal stress independent of uncertain material properties of early age concrete, such as elastic modulus and creep, thermal stress device is used. In order to verify the application of various degree of constraint in the thermal stress device, a series of experiments were performed on mass concrete followed by numerical simulation. The application of various degrees of constraint can be achieved by using constraint frame material with different thermal expansion coefficient, length, and cross sectional area. Temperature development in the real structure has been simulated using temperature and humidity control chamber. The results from experiments and numerical analysis show that the thermal stresses estimated from simulation agree well with the general stress variations in the real structure even though the properties of concrete are uncertain.

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전력용 반도체소자(IGBT)의 모델링에 의한 열적특성 시뮬레이션 (Modeling and Thermal Characteristic Simulation of Power Semiconductor Device (IGBT))

  • 서영수;백동현;조문택
    • 한국화재소방학회논문지
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    • 제10권2호
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    • pp.28-39
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    • 1996
  • A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

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