• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.1
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• pp.1-8
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• 1971

A survey meter which is used a G-M counter sensitive to beta and gamma radiation is studied. This device is completely transistorized, operated with battery, and can be read directly the 3 full-scale meter range: 2.5, 25 and 250 MR/HR respectively. The collector-coupled monostabel multivibrator consisting of a counting-rate meter circuit, and the astable blocking oscillator consisting of a dc-de converter for power supply are analyzed and derived the design dquations. To improve the resolving time of the G-M counter the device is designed to be triggered by low pulse in the order of 0.5v.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.26-33
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• 1992

This paper describes a new phase-difference detection method and the associate process algorithm for calculating the mean value of phase difference detected and OVCXO control value and for monitoring and controlling the DP-PLL operation status to be used in the design of a high-frequency DP-PLL. Through the experiments of DP-PLL implemented with 16-bit processor, memories, pheriperals and OVCXO to eraluate the suggested method and algorithm, it is shown that a remarkable improvement in PLL function such as phase detection, and reference clock tracing capability, jitter absorbability and frequency stability compared with other existing DP-PLL synchronization device is achieved.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.71-79
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• 1994

In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.148-162
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• 1996

Bonding wires for high frequency device packaging have dominant parasitic inductances which limit the performance of semiconductor lasers. In this paper, the inductance sof bonding wires are claculated by the method of moments with incorporation of ohmic loss, and the wideband modulation characteristics are analyzed for ddifferent wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire is 7 GHz wider than that for 2mm-length bonding wire. We also observed th estatic inductance calculation results in dispersive deviation of the parasitic inductance and the modulation characteristics from the wideband moment methods calculations. The angled bonding wire has much less parasitic inductance and improves the modulation bandwidth more than 6 GHz. This calculation resutls an be widely used for designing and packaging of high-speed semiconductor device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.5
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• pp.22-29
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• 1981

An ion sensitive field effect transistor employing a special HCI heat treatment for the gate oxide layer along with tungsten metallization and multilayer encapsulation using fumed silica epoxy mixture was fabricated and its performance characteristics have been investigated. A theoretical model for the device operation is discussed, and it is shown that the experimental results are in good agreement with the theory. The fabricated device has excellent performance characteristics showing the fast response, long operation-life, small pH hysteresis, high sensitivity, etc. Especially, its stability has been greatly improved.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.1
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• pp.34-41
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• 1998

In this paper, I designed a P1394 serial bus chip as new bus interface architecture which can transmit the multimedia data at the rate of 400 Mbps and guarantee necessary bandwidth. because multimedia data become meaningless data after appropriate time, it is necessary to transfer multimedia data in real time, P1394 serial bus chip designed in this paper support isochronous transfer mode to solve this problem. Also, designed P1394 serial bus chip can transfer high quality video data or high quality audio data because it support the speed of 400 Mbps. While user must set device ID manually in previous interface such as SCSI, device ID is automatically determined if user connect each node with designed P1394 serial bus cable and power on. To design this chip, I verified the behavioral of the entrire system and synthesized layout. Also, I did layout the analog blocks and blocks which must be optimized in full custom.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.2
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• pp.1-9
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• 1997

For the reduction of parasitic inductance and matching of bonding wire in the package of microwave devices, we propose multiple bonding wires buried in a dielectric material of FR-4 composite. This structure is analyzed using the method of moments (MoM) and compared with the common bondwires and ribbon interconnections. The FR-4 composite is modelled by the cole-cole model which can consider the loss and the variation of the permittivity in a frequency. At 20 GHz, the parasitic reactance is reduced by 90%, 80%, 60% compared to those of a single bonding wire in air, double bonding wires in air and ribbon interconnection in air, respectively. Also, the new bondwire shows very good matching of 60.ohm characteristic impedance and has 15dB, 10dB, 5dB improvement of the return loss and 2.5dB, 0.7dB, 0.2dB improvement of the insertion loss compared to the common interconnections. This technique can minimize the parasitic effect of bondwires in microwave device packaging.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.64-71
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• 1997

A new etching technique of meltback was investigated for GaAs lensed optical devices with selective windows opending in the LPE (liquid phase epitaxy) system. In the meltback process, the etch depth and the etch shape were controlled by the degree of under-saturation, etch time and other parameters. A GaAs/AlGaAs DH layer was grown on the selectively etched hemispherical well for optical device application such as lensed surface emitting LED. The regrowth process were related with the coolin grate and the well to well spacing. A novel surface emitting LED with hemispherical AlGaAs lens was fabricated using the meltbakc and regrowth as the key process for AlaAs lens array. The light emitting efficiency of the LED was upto three times higher than the similar structure LED without lens. The meltback and regrowth technique was applicable to manufacture the optical device in LPE.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.69-75
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• 1997

A Si-channle MESFET using .delta.-doped layers was designed and the considerable enhancement of the current driving capability of the device was observed by simulation. The channel consists of double .delta.-doped layers separated by a low-doped spacer. Cariers are spilt from the .delta.-doped layers and are accumulated in the spacer. The saturation current is enhanced by the contribution of the carriers in the spacer. Among the design parameters that affect the peformance of the device, the thickness of the spacer and the ratio of the doping concentrations of the two .delta.-doped layers were studied. The spacer thickenss of 300~500.angs. and the doping ratio of 3~4 were shown to be the optimized values. The saturation current was observed to be increased by 75% compared with a bulk-channel MESFET. The performances of transconductance, output resistance, and subthreshold swing were also enhanced.