• Title/Summary/Keyword: Telematics device

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Smart Phone and Vehicle Authentication Scheme with M2M Device (M2M 기기에서 스마트폰 및 차량 인증 기법)

  • Yeo, Seong-Gwon;Lee, Keun-Ho
    • Journal of the Korea Convergence Society
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    • v.2 no.4
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    • pp.1-7
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    • 2011
  • As the developing of the information technology, M2M market that is using communication between devices is growing rapidly and many companies are involved in M2M business. In this paper, the concept of telematics and vulnerabilities of vehicle network security are discussed. The convergence of vehicle and information technology, the development of mobile communication technology have improved quality of service that provided to user but as a result security threats has diverse. We proposed new business model that be occurred to the participation of mobile carriers in telematics business and we analyzed mobile radio communication network security vulnerabilities. We proposed smart phone and Vehicle authentication scheme with M2M device as a way to solve vulnerabilities.

2.4GHz Short range Wireless Surroundings Measurement system within In-Vehicle environment for Telematics service (텔레매틱스 서비스를 위한 차량 내 2.4GHz 대역의 근거리 무선 통신 환경 측정 시스템 구현)

  • Hur, Soojung;Lee, Seunghwan;Park, Yongwan;Shin, Jeonghun
    • IEMEK Journal of Embedded Systems and Applications
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    • v.1 no.2
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    • pp.82-89
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    • 2006
  • It appears that it is possible for us to make a wireless communication of even home-network system within car by integrating with the Ubiquitous such as mobile phone, wireless Internet, GPS and DMB in the future. If the present wireless surroundings within the car are connected with very high-speed wireless network as measurement system for wireless communication surroundings within this car in the future, it will develop the complicated communication conditions such as safe checkup, communication between systems within car, and wireless communication for user entertainment unlike universal communication conditions. Accordingly, there is the necessity of the device that can measure the interference of electric wave, communication speed and communication quality by a kind of each car. This paper aims at making the real measurement device to raise the reliability of each Application for inquiring into the interference about each other in the frequency band used under Telematics surroundings.

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The Fabrication and Characterization of CODE MOSFET (CODE MOSFET 소자의 제작 및 특성)

  • 송재혁;김기홍;박영준;민홍식
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.6
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    • pp.895-900
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    • 1990
  • With the MOS device scailing down, the substrate concentration must increase in order to avoid punchthrough leakage current due to the DIBL(Drain Induced Barrier Lowering) effect. However the enhancement of the substrate concentration increases source, drain juntion capacitances and substrate current due to hot elelctron, degrading the speed characteristics and reliability of the MOS devices. In this paper, a new device, called CODE(Channel Only Dopant Enhancement) MOS, an its fabrication are proposed. By comparing the fabricated CODE MOSFET with the conventional device, the improvements on DIBL, substrate current and source, drain juntion capacitances are realized.

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Development of a Haptic Interface Conceptual Model for the Next Generation Telematics (차세대 텔레매틱스 햅틱 인터페이스의 개념적 모델 개발)

  • Jin, Beom-Suk;Ko, Sang-Min;Ji, Yong-Gu
    • 한국HCI학회:학술대회논문집
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    • 2006.02a
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    • pp.257-265
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    • 2006
  • 다양한 정보기기들의 복합화 형태로 진화하는 차세대 텔레매틱스 시스템에서는 운전자의 안정성 확보와 workload 감소가 중요한 이슈로 대두되어 Interface의 단순화, GUI Interaction의 극복 등의 대한 문제해결이 중요시 되고 있다. 이를 위해 본 연구에서는 사용자의 mental model를 고려한 운전자의 자유로운 navigation을 지원할 eyes-free 기술인 haptic interface를 지원하는 모델 개발을 목표로 기존 haptic interface를 지원하는 기기들의 문제점을 도출하고 차세대 텔레매틱스 시스템의 분석을 통해 기능적 요구사항을 정의하였다. 이를 기반으로 사용자에게 haptic interface를 통한 interaction을 제공함으로써 차세대 텔레매틱스 시스템을 지원하는 conceptual model을 개발하였다. 또한 haptic device design시에 고려되는 평가지표들을 선별하여 평가지표의 계층적 구조도를 작성한 후 AHP평가 모델을 개발하여 haptic device design 시의 중요 고려사항을 도출하고 중요도를 산정하여 초기 design 단계에서의 prototype에 대한 객관적이고 정량적인 평가를 제공하였다.

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A Location Based Emergency Alert Service

  • Han E. Y.;Choi H. O.
    • Proceedings of the KSRS Conference
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    • 2004.10a
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    • pp.327-330
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    • 2004
  • This research work is concerned with a location-based alert service in wireless communication network environment. The alert service automatically transfers alert message to subscriber in the disaster area. This research work deals with automatic alert services that automatically provide people in emergency area with the state of emergency. The alert service uses the mobile device to inform its urgency to the subscribers in its area. The location tracking service will give the list of people in emergency area. The all processes of this research work are followed as. First, when a disaster or a calamity comes in, an emergency management center receives the emergency to analyze its shape and size and to declare the place to 'the disaster area.' Secondly, then the center finds information of mobile device subscribers in the disaster area. Finally, the center automatically generates a shape of text or audio of alert message of the emergency to send the message to the subscribers in the disaster area. Our mobile automatic alert service proposed above is so efficient that the subscribers in disasters area may meet the emergency more efficiently and may save their own valuable lives and properties more safely.

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The development of a tool for PLD Design with device fitting (Device fitting이 고려된 PLD 설계용 Tool 개발)

  • 원충상;김희석
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.10
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    • pp.102-110
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    • 1995
  • This paper describes a development of the PLD design tool in considering with a device fitting. To design digital circuit with PLDs, several steps in the developed PLD design tool are needed such as Boolean description step, pin map step, FUSE map and JEDEC steps ... etc. Especially, we have considered the device fitting to design large digital circuits with PLDs developed the device fitting algorithms based on the PLD device fitting and compared with the results of a another PLD design tool(PALASM). Also, we have proved that the developed PLD design tool is successfully implemented by the connection with a PLD writer(ALL-07), in the case of design digital circuits.

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A Study on the Fabrication of the Convex Structured MOSFET and Its Electrical Characteristics (Convex 구조를 갖는 MOSFET 소자의 제작 및 그 전기적 특성에 관한 연구)

  • Kim, Gi-Hong;Kim, Hyun-Chul;Kim, Heung-Sik;An, Chul
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.8
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    • pp.78-88
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    • 1992
  • To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

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A novel self-aligned offset gated polysilicon thin film transistor without an additional offset mask (오프셋 마스크를 이용하지 않는 새로운 자기 정합 폴리 실리콘 박막 트랜지스터)

  • 민병혁;박철민;한민구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.5
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    • pp.54-59
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    • 1995
  • We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.

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The Analysis of GaAs NESFET Device by Finite Element Method (유한요소법에 의한 GaAs MESFET소자의 해석)

  • Song, Nag-Un
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.1
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    • pp.33-41
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    • 1988
  • In this work, two-dimensional finite element method code is developed to characterize GaAs MESFET devices. Here, two coupled equations, i.e., Poisson equation and current continuity equation, are solved iteratively by Gummel's scheme. The energy transport equation is incorporated with these to include the temperature information. By this method, the GaAs MESFET device is analyzed by calculating the potential and electron concentration distribution. from these the I-V characteristics and other device parametersare obtained and discussed. It is comfirmed that this method can be effectively used in the device level simulation and characterization and can be extended to the small and large signal analysis of the device.

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