• 한국결정성장학회지
• /
• 제13권1호
• /
• pp.24-30
• /
• 2003

The preparation of $PbTiO_3$ powder was carried out using the oxide starting material by hydrothermal method. The powder of a crystalline phase with perovskite structure was synthesized. The optimum conditions for the preparation of powder were as follows; hydrothermal solvent; 8M-KOH or 8M-NaOH, reaction temperature; 250~$270^{\circ}C$, run time; 10 h. The ,shape of synthesized powders were well developed crystalline faces with specific surface area of about 2.3 $\textrm m^2$/g in KOH solution and about 5.0 $\textrm m^2$/g in NaOH solution. The cell parameters of powder were a = 3.90$\AA$, c = 4.14 $\AA$ and cell volume was 57.30 $\AA^3$. The cell ratio (c/a) of powder was the same as the theoretical ratio with c/a = 1.06 and the phase transition temperature(Tc) of the powders was about $470^{\circ}C$.

• 수산해양기술연구
• /
• 제30권4호
• /
• pp.350-356
• /
• 1994

We have prepared superconducting Bi-Pb-Sr-Ca.Cu-O thin films by RF magnetron sputtering technique, on heated MgO(100) substrates. Sputtering was carried out in a mixture of argon and oxygen(10%) and the pressure was maintained at 5 mTorr during deposition. The substrate temperature was maintained $400^{\circ}C$ during deposition. The films sputtered were amorphous and insulating. All the films became superconducting by annealing, The films annealed at $880^{\circ}C$ for 30 minutes in air showed high-Tc phase with zero resistivity of 93K. These results indicate that the growth of the high-Tc phase is promoted by the presence of Pb at annealing temperature.

• 한국결정성장학회지
• /
• 제11권3호
• /
• pp.106-111
• /
• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.23-23
• /
• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Current Photovoltaic Research
• /
• 제1권1호
• /
• pp.27-32
• /
• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.122-122
• /
• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Journal of Animal Science and Technology
• /
• 제62권2호
• /
• pp.198-207
• /
• 2020

This experiment was performed to evaluate the optimal proportion of dietary standardized ileal digestible lysine (SID Lys) to net energy (NE) proportion in growing to finishing pigs. A total of seventy-two pigs were used at phase 1 (initial body weight 37.23 ± 0.23 kilogram, for 42 d) and at phase 2 (initial body weight 54.16 ± 0.20 kilogram, for 77 d). They were arbitrarily assigned to three treatments groups consisting of four duplicates per treatment (six pigs in duplicates, respectively). Diet treatments were as follows: CON = basal diets (phase 1, crude protein (CP): 19.1%; SID Lys: 0.94%; SID Lys: NE proportion: 0.91 g/MJ / phase 2, CP: 17.0%; SID Lys: 0.84%; SID Lys: NE proportion: 0.79 g/MJ), TRT1 (phase 1, CP: 18.0%; SID Lys: 0.92%; SID Lys: NE proportion: 0.89 g/MJ / phase 2, CP: 15.8%; SID Lys: 0.8%; SID Lys: NE proportion: 0.75 g/MJ), TRT2 (phase 1, CP: 17.3%; SID Lys: 0.82%; SID Lys: NE proportion: 0.79 g/MJ / phase 2, CP: 14.8%; SID Lys: 0.7%; SID Lys: NE proportion: 0.65 g/MJ). In phase 1 and 2, growth performance did not meaningfully be affected when SID Lys: NE proportion decreased with reducing CP content. In phase 2, the nitrogen digestibility of CON group in 11 week was higher (p < 0.05) than other treatments. Also, marbling and firmness scores of TRT2 group diets increased (p < 0.05) compared with those of CON group, but dissimilarities of other meat qualities did not be detected among treatments. In conclusion, introduction of NE system can reduce negative problems introduced when dietary CP decreased. Also, 0.79 and 0.65 g/MJ of SID Lys: NE proportion is the optimal Lys: NE proportion to achieve improved pork quality without impairing the growth performance in growing-finishing pigs, respectively.

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
• /
• pp.20-20
• /
• 2002

Based on experimental and theoretical analyses, we suggested a new possibility that the CVD diamond films grow not by the atomic unit but by the charged clusters containing a few hundreds of carbon atoms, which form spontaneously in the gas phase [J. Crysta] Growth 62 (1996) 55]. These hypothetical negatively-charged clusters were experimentally confirmed under a typical hot-filament diamond CVD process. Thin film growth by charged clusters or gas phase colloids of a few nanometers was also confirmed in Si and ZrO₂ CVD and appears to be general in many other CVD processes. Many puzzling phenomena in the CVD process such as selective deposition and nanowire growth could be explained by the deposition behavior of charged clusters. Charged clusters were shown to generate and contribute at least partially to the film deposition by thermal evaporation. Origin of charging at the relatively low temperature was explained by the surface ionization described by Saha-Langmuir equation. The hot surface with a high work function favors positive charging of clusters while that of a low work function favors negative charging.

• Toxicological Research
• /
• 제29권4호
• /
• pp.241-247
• /
• 2013

This study was carried out to examine the action mechanism of Chamaecyparis obtusa oil (CO) on hair growth in C57BL/6 mice. For alkaline phosphatase (ALP) and ${\gamma}$-glutamyl transpeptidase (${\gamma}$-GT) activities in the skin tissue, at week 4, the 3% minoxidil (MXD) and 3% CO treatment groups showed an ALP activity that was significantly higher by 85% (p < 0.001) and 48% (p < 0.05) and an ${\gamma}$-GT activity that was significantly higher by 294% (p < 0.01) and 254% (p < 0.05) respectively, as compared to the saline (SA) treatment group. For insulin-like growth factor-1 (IGF-1) mRNA expression in the skin tissue, at week 4, the MXD and CO groups showed a significantly higher expression by 204% (p < 0.05) and 426% (p < 0.01) respectively, as compared to the SA group. At week 4, vascular endothelial growth factor (VEGF) expression in the MXD and CO groups showed a significantly higher expression by 74% and 96% (p < 0.05) respectively, however, epidermal growth factor (EGF) expression in the MXD and CO groups showed a significantly lower expression by 66% and 61% (p < 0.05) respectively, as compared to the SA group. Stem cell factor (SCF) expression in the MXD and CO groups was observed by immunohis-tochemistry as significant in a part of the bulge around the hair follicle and in a part of the basal layer of the epidermis. Taking all the results together, on the basis of effects on ALP and ${\gamma}$-GT activity, and the expression of IGF-1, VEGF and SCF, which are related to the promotion of hair growth, it can be concluded that CO induced a proliferation and division of hair follicle cells and maintained the anagen phase. Because EGF expression was decreased significantly, CO could delay the transition to the catagen phase.

• 한국결정성장학회지
• /
• 제34권2호
• /
• pp.61-65
• /
• 2024

HVPE(Hydride vapor phase epitaxy) 공법은 기체상의 원료를 사용하여 박막 또는 단결정을 제조하는 공법이다. 화학적 기상증착법의 원리를 적용하여 난용융성 또는 고융점의 물질의 단결정을 성장할 수 있는 공법으로서, 질화갈륨(GaN) 단결정을 얻을 수 있는 공법 중 하나이다. 최근 동 공법을 이용하여 질화알루미늄(AlN) 단결정을 성장하고자 하는 연구가 많이 수행되어져 왔으나, 아직은 좋은 결과를 얻지 못하고 있다. 본 연구에서는 AlN 단결정을 HVPE 공법으로 성장하고자 하였다. 성장 공정에서 질소를 운송가스(Carrior gas)로 사용하였으며, 질소(N2)의 양의 변화에 따른 성장 결과를 고찰하여 보았다. 질소의 양이 증가함에 따른 성장 결정의 변화 양상을 확인할 수 있었다. 성장된 AlN 단결정의 형상을 광학 현미경을 사용하여 관찰하였고, 이중결정 X선 회절 분석(DCXRD, Double crystal X-ray diffractometry)을 이용하여, AlN 결정의 생성을 확인함과 동시에 성장된 단결정의 결정성도 알아보았다.