• 한국자기학회지
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• 제16권3호
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• pp.178-181
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• 2006

본 연구에선는 수직 Bridgman 법으로 묽은 자성 반도체 $Si_{1-x}Mn_xTe_{1.5} $ 단결정을 성장시켜 Mn의 조성비 변화에 따른 광학적, 전지적, 그리고 자기적 특성을 조사하였다. X-선 회절 실험으로부터 육방정계(hexagonal) 구조임을 확인하였다. 광흡수 측정으로부터 에너지 띠 간격은 조성비 x와 온도 증가에 대하여 감소함을 보였다. 성장시킨 시료의 경우 강자성 특성을 나타내었으며, Curie 온도는 80K 이상이었다. Mn의 조성비가 증가함에 따라 평균 자기 모멘트와 보자력 값은 증가하였다.

• Current Applied Physics
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• 제18권12호
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• pp.1513-1522
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• 2018

Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.

• 한국표면공학회지
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• 제49권1호
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.126-130
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• 1995

$CdS_{1-x}Te_{1-x}$ polycrystalline thin films were fabricated from CdS and CdTe powder by co-evaporation method at $10^{-6}$ Torr. The Optimum evaporation condition was substrate temperature $T_{s}$=$150^{\circ}C$, evaporation time t=30 min. XRD spectrums indicated that the crystal structure chanced from zinc blonde (x$\leq$0.22) to wurtzite (x$\geq$0.96) through mixed structure (0.22$\leq$0.74) as composition value x increase to CdS. Conductive type was n-type by hot point probe method. van der Pauw method was not applicable for x<0,5 due to high hall voltages, Electrical resistivity and Hall carrier mobility were decreased as x increase, while Hall carrier concentration was increased. The optical bandgap of $CdS_{1-x}Te_{1-x}$ polycrystalline thin films measure d at R.T. had quardratic form and the bowing parameter was fitted as 1.98eV for theoretical value of 2.0eV. I-V characteristics of In/CdTe/$CdS_{x}Te_{1-x}$Au Schottky diodes showed that CdS-rich one had better forward characteristics than CdTe-rich one.

• 전기의세계
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• 제20권2호
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.59-61
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• 1989

The cell parameters of the sintered CdS/CdTe solar cells in which te CuCl$_2$was added in the carbon paste after the sintering of the CdS/CdTe composites an were annealed at 35$0^{\circ}C$ for 10 min in nitrogen are investigated. Voc and FF do not change significantly as the CuCl$_2$increasing up to 500 ppm, Jsc increases with futher increase in copper. The hole concentration, determined by C-V measurement, increases to $1.5\times$10$^{16}$ ㎤ as the copper increased to 25 ppm and then stays at about the same value with further increase in copper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.62-65
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• 1995

CdTe crystals were grown by the vertical Bridgman method. P-type DcTe crystals were grown with Cd:Te= 1:1.001 wt. % ratio, while n-type CdTe crystals were 1:1 Also, CdTe:In crystals were investigated, Lattic constants were 6.489${\AA}$ for p-type 6.480${\AA}$for n=type and 6.483${\AA}$ for CdTe:In EPD was 10$\^$-3/-10$\^$4/cm$\^$-2/ for n-, p-type CdTd, 10$\^$4/-10$\^$5/cm$\^$-2 for Cd:Te:In using by E-Ag solution for (111) plane The carrier concentration, the resistivity and the Hall carrier mobility measured by the van der Pauw method were p=5.78${\times}$10$\^$15/cm$\^$-3/, $\rho$=20.2$\Omega$cm, ${\mu}$$\sub$p/=75.6cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for p-typem n=2.98${\times}$10$\^$16/cm$\^$-3/, $\rho$=0.214$\Omega$cm, ${\mu}$$\sub$p/=978.9cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for n-type and n=7.45${\times}$10$\^$16/cm$\^$-3/, $\rho$=1.54 ${\times}$10$\^$3/$\Omega$cm, ${\mu}$$\sub$p/=658.4 cm$\^$-2/ V$\^$-1/ sec$\^$-1/ for CdTe:In crystals, Transmittance of p-type CdTe was 61% that of n-type was 65%, Cd:Te:In showed 60% IR transmittance.

• 마이크로전자및패키징학회지
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• 제15권3호
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• pp.1-8
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• 2008

환원분위기 열처리가 진공증착법으로 형성한 $(Bi,Sb)_{2}Te_3$박막의 열전특성에 미치는 영향을 연구하였다. 환원분위기(50% $H_2$ + 50% Ar)에서 $300^{\circ}C$의 온도로 2시간 유지하여 열처리함으로써 $(Bi,Sb)_{2}Te_3$박막의 결정성이 크게 향상되었으며 결정립 크기가 크게 증가하였다. 환원분위기 열처리에 의한 정공농도의 감소에 기인하여 $(Bi,Sb)_2Te_3$박막의 Seebeck계수가 열처리 전의 $\sim90{\mu}V/K$로부터 $\sim180{\mu}V/K$으로 증가하였다. 환원분위기 열처리에 의해 $(Bi,Sb)_{2}Te_3$ 박막의 출력인자(power factor)가 5배에서 16배 정도 향상되었으며, 환원분위기 열처리 후 $(Bi,Sb)_{2}Te_3$ 박막은 $18.6\times10^{-4}W/K^{2}-m$의 최대 출력인자를 나타내었다.

• The Korean Journal of Physiology
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• 제14권1호
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• pp.7-13
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• 1980

In the previous experiment, authors have shown that during the latter half of estrous cycle there was an increase in plasma testosterone level in the rats stimulated with hCG. To determine the physiologic significance of elevated plasma testosterone, changes of the plasma concentrations of TeBG and testosterone following hCG stimulation were analyzed in the rats having a regular 5 day cycle. The rats were divided into three groups; the control, the rats stimulated with single hCG on the day of proestrus and stimulated with hCG throughout the entire cycle. Blood samples were obtained once a day for an estrous cycle and analyzed for the binding capacity of TeBG using ammonium sulphate precipitation method and testosterone concentration by means of radioimmunoassay. Followings were the results; 1) There was no significant variation in the binding capacity of TeBG in peripheral blood during the estrous cycle of the control rats. 2) No cyclic variation in the binding capacity of TeBG was observed in the rats stimulated with single hCG on proestrus. although the levels tended to be higher in the rats with stimulation than in the control rats. 3) Continual stimulation of hCG produced a marked increase in the binding capacity of TeBG especially on the day of metaestrus. 4) The changes in the plasma level of testosterone followed the same basic pattern seen in the TeBG binding capacity. 5) From above results, the followings were suggested. a. hCG related increase of the binding capacity of TeBG is probably secondary to a modest increase in estrogen as well. b. hCG related increase of plasma testosterone in female rats is not entirely due to excess production rather in part due to decreased metabolism induced by the rise in TeBG. c. It seems likely that most of elevated testosterone shown in the rat stimulated with hCG is bound to TeBG and only small portion is unbound form which influence cellular activity. It is rather possible that an increase in TeBG could augment estrogen activity.