• IE interfaces
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• v.15 no.1
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• pp.1-9
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• 2002

Tandem AGV system is obtained by partitioning all workstations into multiple zones assigning a single vehicle to each zone. In this paper, we propose an analytical model to design a tandem AGV system with multi-load AGVs. Using simulation, the performance of the proposed model is shown by comparing a conventional multi-load AGV system.

• Journal of Adhesion and Interface
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• v.22 no.4
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• pp.113-117
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• 2021

Among the next-generation solar cells, organic solar cells using organic materials are a key energy production device for the future energy generation devices, and have recently been receiving a lot of attention with rapid growth. To improve the efficiency of organic solar cells, interfacial engineering technology has been widely applied. In particular, it is widely used to improve device efficiency through energy level control by using interface engineering on the anode and cathode, which are positive electrodes, and to ultimately utilize interface engineering for tandem organic solar cells to derive excellent electrical and optical performance to produce high-performance devices. In this article, we will summarize and introduce recent research trends on interfacial engineering used in organic solar cells, and discuss the method of manufacturing high-performance organic solar cells.

• IE interfaces
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• v.14 no.2
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• pp.111-119
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• 2001

A tandem AGV system is based on partitioning all the stations into non-overlapping single vehicle closed loops with additional stations provided as an interface between adjacent loops. For an efficient use of this configuration, it is required to solve the load routing problem(LRP), which is primarily based on the fact that a load may be handled by several vehicles and moved through several loops before it reaches its destination. In this paper, a heuristic based on genetic algorithm(GA) is first developed to solve LRP. The first model obtains the optimal route of each job and the optimal direction of each loop when the vehicle in each loop travels unidirectionally. The second GA model obtaines the optimal polling sequence of the empty vehicle in each loop, when the vehicle can move bidirectionally.

• IE interfaces
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• v.8 no.2
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• pp.135-150
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• 1995

An object-oriented simulation modeling environment, AgvTalk, is presented to provide flexible modeling capabilities for simulation of many alternative AGV systems. The hierarchical features and modularity of AgvTalk create possibilities for the extension and reuse of simulation object components. Also, detailed behavior of each object in the AGV system can be modeled easily and exactly in AgvTalk because there are no limiting modeling constructs. The modeling capabilities of AgvTalk is demonstrated by designing and simulating a conceptually different configuration of AGV systems, known as, the tandem configuration. Between the tandem and conventional AGV systems, the characteristics and design methodology in AgvTalk are described. Also, simulations between two systems are compared with AgvTalk in the job shop environment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.310.1-310.1
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• 2013

We show the novel hot electron based-solar energy conversion using tandem structured Schottky diode with double Schottky barriers. In this report, we show the effect of the double Schottky barriers on solar cell performance by enhancing both of internal photoemission and band-to-band excitation. The tandem structured Au/Si diode capped with TiO2 layer as second semiconductor exhibited improved ability for light harvesting. The proposed mechanisms consist of multiple reflections of hot electrons and additional pathway of solar energy conversion due to presence of multiple interfaces between thin gold film and semiconductors. Short-circuit photocurrent measured on the tandem structured Au/Si diodes under illumination of AM1.5 increased by approximately 70% from 3.1% to 5.3% and overall incident photon to electron conversion efficiency (IPCE) was enhanced in visible light, revealing that the concept of the double Schottky barriers have significant potential as novel strategy for light harvesting.

• IE interfaces
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• v.6 no.2
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• pp.117-131
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• 1993

A job sequencing model is developed and its computer system is tested for processing cold-rolled coils in Tandem Cold Mills(TCM) at the Pohang Iron and Steel Company. Given coils waiting to be processed, this system generates a sequence of jobs satisfying operational constraints for the TCM process. We formulate the problem as a constraint satisfaction problem and employ the backtracking technique combined with looking ahead features in order to generate a feasible solution within a reasonable time. Our system is implemented in C language on 80486-based IBM PC. Some tests based on the real data show that our system is adequate with respect to search time and that it consistantly generates a good feasible solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.