• Earthquakes and Structures
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• v.3 no.3_4
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• pp.507-518
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• 2012

It is now widely accepted that the resulting displacement field within elastic, inhomogeneous, anisotropic solids subjected to equipartitioned, uniform illumination from uncorrelated sources, has intensities that follow diffusion-like equations. Typically, coda waves are invoked to illustrate this concept. These waves arrive later as a consequence of multiple scattering and appear at "the tail" (coda, in Latin) of seismograms and are usually considered an example of diffuse field. It has been demonstrated that the average correlations of motions within a diffuse field, in frequency domain, is proportional to the imaginary part of Green's function tensor. If only one station is available, the average autocorrelation is equal to the average squared amplitudes or the average power spectrum and this gives the Green's function at the source itself. Several works address this point from theoretical and experimental point of view. However, a complete and explicit analytical description is lacking. In this work we study analytically some properties of the Green's function, specifically the imaginary part of Green's function for 2D antiplane problems. This choice is guided by the fact that these scalar problems have a closed analytical solution (Kausel 2006). We assume the diffusiveness of the field and explore its analytical consequences.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.17-23
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• 2018

Recently, electric semiconductors became an issue because of efficient use of energy and compaction of electronics. Silicon electric semiconductors are difficult to put into it because of its physical limitations. Hence, the study of WBG (Wideband Gap) semiconductors like SiC and GaN began. These devices received attention because it can be miniaturized and worked at high temperatures over $300^{\circ}C$. WBG MOSFET electric semiconductors can show performance like silicon IGBT. This can solve the current problem of IGBT tail. The current study shows the technical principles and issues related to SiC and GaN power semiconductors. WBG devices can achieve high performance compared to silicon, but its performance can't be fully utilized because of lack in bonding technology. Therefore, this review introduces research on WBG devices and their packaging issues.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.212-218
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• 2003

Electronic properties of passive films formed on Ti at film formation potentials $(E_f)V_{SCE}$ in pH 8.5 buffer solution and in an artificial seawater were examined through the photocurrent measurement and Mott-Schottky analysis. The passive films formed on Ti in pH 8.5 buffer solution exhibited a n-type semiconductor with a band gap energys $(E_g);E_g^{n=2}=3.4$ eV for nondirect electron transition, and $E_g^{n=0.5}=3.7$ eV for direct electron transition. These band gap values were almost same as those for the passive films formed in artificial seawater, indicating that chloride ion ($Cl^-$ in solution did not affect the electronic structure of the passive film on Ti. $E_g$ for passive films formed on Ti were found to be greater than those ($E_g^{n=0.5}=3.1$ eV, $E_g^{n=2}=3.4$) for a thermal oxide film formed on Ti in air at $400^{\circ}C$. The disorder energy of passive film, determined from the absorption tail of photocurrent spectrum, was much greater than that for the thermal oxide film farmed on Ti in air at $400^{\circ}C$. The greater $E_g$ and the higher disorder energy for the passive film compared with those for the thermal oxide fIlm suggest that the passive film on Ti exhibited more disorded structure than the thermal oxide film. The donor density (about $2.4{\times}10^{20}cm^{-3}$) for the passive film formed in artificial seawater was greater than that (about $20{\times}10^{20}cm^{-3}$) formed in pH 8.5 buffer solution, indicating that $Cl^-$ increased the donor density for the passive film on Ti.

• Applied Microscopy
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• v.22 no.2
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• pp.97-117
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• 1992

In order to study process of spermiogenesis of the Korean greater horseshoe bat, Rhinolophus ferrumequinum korai, the cycle of seminiferous epithelium was examined by the light and electron microscope and the following results were obtained based on the epithelial cell differentiation. 1. Spermiogenesis occurred from early July to mid-Octber, and spermatogenic activity was vigorous from mid-August to late September. Spermatocytes including spermatogonia were found to be degenerated in only July. It is deduced that the degeneration serves as the mechanism to regulate effective use of energy to prepare for mating and hibernating periods, and regulation of breeding cycle. 2. Spermiogenesis of the Korean greater horseshoe bat was divided according to differentiation of the cell structure, into Golgi, cap, acrosome, maturation and spermiation phases; Golgi, cap and spermiation phases were further divided into two steps of early and late phase respectively, and acrosome phase into three steps of early, mid and late phases, and maturation phase has only one step. Hence, the spermiogenesis consists of ten phases. The first research was done in this article on the changes of chromatin with nucleus, the time of appearance and disappearance of chromatin granules, in case of Korean greater horseshoe bat (Rhinolophus ferrumequinum korai). Chromatin granule began to be condensed in late Golgi and the condensation proceeded to form an irregular mass of a electron-dense chromatin in a form of circular cylinder in the center of nucleus at the phase of maturation. Finally, the chromatin condensation proceeded and perfect nucleus of sperm with homogeneous density was formed when the sperm was separated from Sertoli cell. Therefore, appearance and disappearance of chromatin granules occurred in the period of time between late Golgi and maturation phase, The tail of sperm began to develop in early cap phase, Numerous lipid droplets were obseved in the cytoplasm of spermatids during the maturation phase, which seemed to be used as energy source necessary to make mature sperm during spermiogenesis.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4161-4164
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• 2012

Density functional MO calculations for the methylsilole anion of $[C_4H_4SiMe]^-$ and methylgermole anion of $[C_4H_4SiMe]^-$ at the B3LYP (full)/6-311+$G^*$ level (GAUSSIAN 94) were carried out and characterized by frequency analysis. The ground state structure for the methylsilole anion and methylgermole anion is that the methyl group is pyramidalized with highly localized structure. The difference between the calculated $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are 9.4 and 11.5 pm, respectively. The E-Me vector forms an angle of $67.9^{\circ}$ and $78.2^{\circ}$ with the $C_4E$ plane, respectively. The optimized structures of the saddle point state for the methylsilole anion and methylgermole anion have been also found as a planar with highly delocalized structure. The optimized $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are nearly equal for both cases. The methyl group is located in the plane of $C_4E$ ring and the angle between the E-Me vector and the $C_4E$ plane for the methylsilole anion and methylgermole anion is $2.0^{\circ}$ and $2.3^{\circ}$, respectively. The energy difference between the ground state structure and the transition state structure is only 5.1 kcal $mol^{-1}$ for the methylsilole anion. However, the energy difference of the methylgermole anion is 14.9 kcal $mol^{-1}$, which is much higher than that for the corresponding methylsilole monoanion by 9.8 kcal $mol^{-1}$. Based on MO calculations, we suggest that the head-to-tail dimer compound, 4, result from [2+2] cycloaddition of silicon-carbon double bond character in the highly delocalized transition state of 1. However, the inversion barrier for the methylgermole anion is too high to dimerize.

• Macromolecular Research
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• v.12 no.3
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• pp.322-324
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• 2004

Poly(1-dodecyl-2,5-pyrrylene vinylene) (PDPV) has an extended 1t-conjugated structure and exhibits characteristic spectroscopic features. The PDPV we prepared has an absorption maximum at 510nm and its long absorption tail at ca. 750nm in methylene chloride is due to the long 1t-conjugated system connected to vinyl group. The large red-shift of emission was 625nm upon excitation at 480nm, which suggests the existence of a low emissive state. The emission of PDPV in less-polar solvents decreased markedly relative to that in the more-polar solvents; this observation was ascribed possibly to quenching by a strong vibrational mode of the dodecyl groups of PDPV in less-polar solvents. Furthermore, the emission from the high-energy side had a single decay component (0.1㎱, 49.96%), while that from the low-energy side had two components (0.6㎱, 27.1 %; 2.7㎱, 22.87%). We characterized the redox properties of PDPV by cyclic voltammetry. Every redox peak showed irreversible behavior; the oxidation peaks appeared at 1.7,0.8, and 0.6V and the reduction peak at -0.5V.

• Journal of the Korean Applied Science and Technology
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• v.39 no.5
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• pp.720-726
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• 2022

The behavior changes of the lipid bilayer, induced by the hydroxybutyric-acid incorporation, were investigated with respect to each phase of the layer using fluorescence intensity change. Spherical phospholipid bilayers, called vesicles, were prepared using an emulsion technique. Only in the aqueous inside of the vesicles was encapsulated 8-Aminonaphthalene-1,3,6-trisulfonic-acid-disodium-salt(ANTS). p-Xylene-bis-N-pyridinium-bromide(DPX) was included as a quencher only outside of the vesicles. The fluorescence scale was calibrated with the ANTS-encapsulated vesicles in DPX-dispersed-buffer taken as 100% and the mixture of ANTS and DPX in the buffer as 0%. Hydroxybutyric-acid addition into the vesicle solution led the change in the bilayer. The change was found to be related to the phase of each layer according to the ratio of hydroxybutyric-acid to lipid. These results seem to depend on the stability of the vesicles, due to the osmotic and volumetric effects on the arrangement in both head-group and tail-group.

• The Journal of Internal Korean Medicine
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• v.42 no.6
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• pp.1269-1284
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• 2021

Objectives: Phragmitis Rhizoma is the fresh or dried rhizome of Phragmites communis Trin., which has been prescribed in traditional Korean medicine to relieve fever and vomiting and to nourish the body fluids. Recently, the protective effect of Phragmitis Rhizoma extract or its components on myelotoxicity and inflammatory responses have been reported, but no study has yet been conducted on oxidative stress. Methods: The present study investigated whether an ethanol extract of Phragmitis Rhizoma (PR) could protect against cellular damage induced by oxidative stress in Chang liver cells. Results: Pretreatment with PR significantly suppressed the hydrogen peroxide (H₂O₂)-induced reduction of Chang cell viability and generation of reactive oxygen species (ROS), thereby deferring apoptosis. PR also markedly inhibited H₂O₂-induced comet tail formation and phospho-γH2AX expression, suggesting that PR protected against oxidative stress-mediated DNA damage. PR also effectively prevented the inhibition of ATP synthesis in H₂O₂-treated Chang cells by inhibiting the loss of mitochondrial membrane potential, indicating that PR maintains energy metabolism through preservation of mitochondrial function while eliminating ROS generated by H₂O₂. Immunoblotting results indicated that PR attenuated the H₂O₂-induced downregulation of Bcl-2 and upregulation of Bax expression. Conclusions: PR protects against oxidative injury in Chang liver cells by regulating energy homeostasis via ROS generation blockade, which is at least partly mediated through inactivation of the mitochondria-mediated apoptosis pathway.

• Journal of Korean Tunnelling and Underground Space Association
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• v.10 no.2
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• pp.105-118
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• 2008

Shotcrete is one of the main support materials in tunnelling. Its bonding state on excavated rock surfaces controls the safety of the tunnel: De-bonding of shotcrete from an excavated surface decreases the safety of the tunnel. Meanwhile, the bonding state of shotcrete is affected by blasting during excavation at tunnel face as well as bench cut. Generally, the bonding state of shotcrete can be classified as void, de-bonded, or fully bonded. In this study, the state of the back-surface of shotcrete is investigated using impact-echo (IE) techniques. Numerical simulation of IE technique is performed with ABAQUS. Signals obtained from the IE simulations were analyzed at time, frequency, and time-frequency domains, respectively. Using an integrated active signal processing technique coupled with a Short-Time Fourier Transform (STFT) analysis, the bonding state of the shotcrete can be evaluated accurately. As the bonding state worsens, the amplitude of the first peak past the maximum amplitude in the time domain waveform and the maximum energy of the autospectral density are increasing. The resonance frequency becomes detectable and calculable and the contour in time-frequency domain has a long tail parallel to the time axis. Signal characteristics with respect to ground condition were obtained in case of fully bonded condition. As the ground condition worsens, the length of a long tail parallel to the time axis is lengthened and the contour is located in low frequency range under 10 kHz.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.