• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.355-356
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• 2006

WC-TiC-TaC binderless cemented carbide was oxidized under low partial pressure of oxygen (50ppm) at 873K for 1 to 20 h. Surface roughness was measured using atomic force microscope, and effect of TiC amount on oxidation behavior of the carbide was investigated. WC phase was oxidized more easily than WC-TiC-TaC solid solution phase. With an increase in TiC amount, WC-TiC-TaC phase increased and the oxidation resistance of the carbide increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.71-74
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• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

• 한국결정성장학회지
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• 제15권3호
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• pp.99-103
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• 2005

NaCl-KCl을 flux로 사용한 용융염 합성법을 이용하여 $Pb(Sc_{1/2}Ta_{1/2})O_3$, 분말을 제조하였다. $700^{\circ}C$에서 $800^{\circ}C$의 온도범위에서 상형성 및 분말 상태의 변화를 조사하였다. 용융염 합성법으로 $750^{\circ}C$ 2시간 하소하였을 때, 순수한 페로브스카이트 구조를 가진 $Pb(Sc_{1/2}Ta_{1/2})O_3$ 상이 형성되었으며, 평균 입자 크기는 $0.5\{mu}m$ 이하이고 입방체와 유사한 형상을 갖는 분말이 제조되었다. DIA, X-선 회절 분석, 미세구조 변화를 통해 합성된 분말의 특성을 고찰하였다.

• 한국결정성장학회지
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• 제3권2호
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• pp.99-106
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• 1993

열분석(DTA : Differential Thermal Analysis) 방법에 의한 퀴리온도$(T_c)$ 측정방법으로부터 48.50에서 49 $Li_2O$ mole %까지의 퀴리온도$(T_c)$와 $Li_2O$ mole %(C)의 관계식 $(T_c = -17.869C^2+1840.2C-46623)$을 구하였다.$LiTaO_3$ 단결정의 congruent 조성을 결정하기 위하여 48.60 부터 48.70 mole %까지의 영역에서 쵸크랄스키법으로 $LiTaO_3$ 단결정을 육성하고 Top과 Tail 결정에서의 퀴리온도 차이,${\Delta}{T_c} (T_{c(Top)}-T{_c(Tail)})$ 그리고 결정성장 초기와 말기의 융액과 결정의 조성비로부터 분배계수(k)를 구하였다. 이 결과로부터 결정된 congruent 조성은 48.65 mole %였으며 그때의 $(T_c)$ 값은 $610{\pm}1^{\circ}C$였다.

• 한국재료학회지
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• 제16권10호
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1355-1356
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• 2006

The microwave dielectric properties of the $Ba_{5}Ta_{4}O_{15}$ ceramics with sintering temperature were investigated. All sample of the $Ba_{5}Ta_{4}O_{15}$ ceramics prepared by conventional mixed oxide method and sintered at $1450^{\circ}C{\sim}1575^{\circ}C$. Porosity of the $Ba_{5}Ta_{4}O_{15}$ ceramics was reduced with increasing sintering temperature. The bulk density, dielectric constant and Qualify factor increased with increasing sintering temperature. In the case of $Ba_{5}Ta_{4}O_{15}$ ceramics sintered at $1550^{\circ}C$, The bulk density, dielectric constant and quality factor were $7.31g/cm^2$ and 27.4, 30,635GHz, respectively.

• 멤브레인
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• 제20권1호
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• pp.69-75
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• 2010

수소투과금속인 tantalum과 세라믹 지지체로 $Y_2O_3$-stabilized $ZrO_2$ (YSZ)를 이용하여 cermet 수소분리막을 제조하였다. Ta/YSZ cermet 분리막은 헬륨분위기에서의 예비소결과 고진공 하에서의 본소결을 통해 제조하였으며, 소결 및 밀봉 과정에서 발생하는 불순물은 연마를 통해 제거 가능하였다. 이렇게 제조된 분리막은 tantalum의 연속상이 잘 발달된 치밀구조를 보였다. 수소 해리를 위해 팔라듐 코팅을 한 Ta/YSZ 분리막을 이용하여 $200{\sim}350^{\circ}C$의 범위에서 수소투과실험을 수행하였다. $300^{\circ}C$에서 분리막에 균열이 형성되었고 Pd 코팅층은 몇 곳이 박리되었다. XRD 결과는 tantalum이 수소와 반응하여 $Ta_2H$가 생성되는 것을 보여주며, $Ta_2H$에 인한 격자 팽창이 분리막의 결함을 초래하였다.

• 한국진공학회지
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• 제12권3호
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• pp.174-181
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• 2003

본 논문은 탄탈 확산 방지막의 증착시 음의 기판 바이어스에 의한 탄탈막의 특성변화와 열적 안정성에 대해서 고찰하였다. 기판 바이어스를 걸지 않은 경우, 탄탈막은 원주형 모양의 결정 성장을 보이는 주상구조와 250 $\mu\Omega$cm의 높은 비저항값을 보였으나, 기판 바이어스를 걸어줌에 파라서 주상구조가 아닌 치밀한 미세구조와 표면이 평탄한 막이 형성되었고 비저항값도 현저히 감소되었으며, 특히 -125 V에서 증착된 탄탈막은 비저항값이 약 40 $\mu\Omega$cm로 이는 탄탈 벌크의 저항값 (13 $\mu\Omega$cm)에 근접한 값임을 알 수 있었다. 또한, 탄탈 확산 방지막의 열적 안정성에 대해서도, 기판 바이어스를 걸지 않은 탄탈막의 경우 $400^{\circ}C$에서 구리와 실리콘의 반응에 의해 비저항 값이 크게 증가한 결과에 비해, 기판 바이어스에 의해 증착된 탄탈막의 경우 $600^{\circ}C$까지 확산 방지막의 효과를 유지하고 있는 것으로 관찰되었다.

• 한국표면공학회지
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• 제29권6호
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• pp.847-850
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• 1996

The bi-layered films composed of Co-Cr-Ta layers and paramagnetic $Co_{67}Cr_{33}$ underlayer were deposited by suing Facing Targets Sputtering(FTS). The effects of $Co_{67}Cr_{33}$ underlayer on the crystallographic and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}Cr_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was imporved by the $Co_{67}Cr_{33}$ underlayer rather than Ti ones. However, te coercivity H$_{c\bot}$ of Co-Cr-Ta layers deposited on $Co_{67}Cr_{33}$ underlayer was as low as 250 Oe even at substrate temperature of $220^{\circ}C$. This H$_{c\bot}$ decrease seems to be attributed to the effect of the $Co_{67}Cr_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.