• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.106-106
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• 2015

In this study, we investigated electrochemically formed nanotube shape on ternary Ti-25Ta-xHf alloys with Hf contents. Ti-25Ta-xHf (x=0~15 wt.%) alloys were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1050^{\circ}C$ for 2h and then water quenching. The specimens were cut from ingots to 4 mm thickness and first ground and polished using SiC paper (grades from #100 to #2000). The anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. The formation of nanotubular film was conducted by electrochemical method in mixed electrolytes with 1 M $H_3PO_4$ + 0.8 wt. % NaF at 30 V for 2 h. The morphologies of nanotube depended on the Hf content in Ti-25Ta-xHf ternary system.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.49-51
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• 1997

New complex perovskite compounds (Na0.5Sr0.5)(Ti0.5Nb0.5)O3, (Na0.5Sr0.5)(Zr0.5Ti0.5)O3 and (Na0.5Sr0.5)(Ti0.5Ta0.5)O3 have been prepared. The crystal structures of these compounds were determined by powder X-ray Rietveld analysis. The crystal structure of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 and (Na0.5Sr0.5)(Zr0.5Ta0.5)O3 was Pmmn, and that of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 was I4/mmm. All these compounds showed the superstructure due to the oxygen octahedron distortion. The selected bond distances and bond angles were calculated by the OFFER. The octahedron distortion for each sample, which was measured from the bond distances and bond angles, showed the following order: (Na0.5Sr0.5)(Z0.5Ta0.5)O3> (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 > (Na0.5Sr0.5)(Ti0.5Ta0.5)O3. Dielectric properties were measured for the samples. In this study, the crystal structure and dielectric properties of the new complex perovskite structures and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.668-673
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• 1995

$UO_2$-CeO$_2$ 모의혼합분말에 첨가제를 미량 첨가하여 소결체의 미세구조 변화를 $UO_2$분말의 경우와 비교, 관찰하였다. 소결 첨가제로서 Ta, Ti 및 Nb를 사용하였으며, 이들을 미세한 산화물의 형태로 $UO_2$ 및 $UO_2$-CeO$_2$에 첨가하여 환원성 및 산화성 분위기에서 각각 소결하였다. Ta, Ti 및 Nb는 환원소결에서 $UO_2$의 결정립을 성장시켰으나 산화소결에서는 첨가효과가 크게 나타나지 않았다. $UO_2$-0.lw%TiO$_2$와 $UO_2$-0.6w%Ta$_2$O$_{5}$의 환원소결체에서 eutectic phase가 관찰되었으나 산화소결체에서는 나타나지 않았다. $UO_2$-4wt%CeO$_2$의 환원소결에서는 Ti만이 결정립성장에 기여하는 것으로 나타났으며 Ta, Nb와 같이 $UO_2$에 치환형으로 고유되는 원소는 Ce 이온과 Cluster를 형성함으로 결정립성장에 거의 기여하지 못하고, Ti와 같이 UO2$_2$ 침입형으로 고용되는 원소는 일부가 인접한 Ce$_{U}$' 이온과 cluster를 형성하더라도 나머지가 V$_{U}$'의 형성에 기여하므로서 결정립을 성장시킬 수 있다.

• Bulletin of the Korean Chemical Society
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• v.28 no.9
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• pp.1463-1466
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• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.1-6
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• 2024

Recently, artificial neural networks have been playing a crucial role and advancing across various fields. Artificial neural networks are typically categorized into feedforward neural networks and recurrent neural networks. However, feedforward neural networks are primarily used for processing static spatial patterns such as image recognition and object detection. They are not suitable for handling temporal signals. Recurrent neural networks, on the other hand, face the challenges of complex training procedures and requiring significant computational power. In this paper, we propose memristors suitable for an advanced form of recurrent neural networks called reservoir computing systems, utilizing a mask processor. Using the characteristic equations of Ti/TiOx/TaOy/Pt, Pt/TiOx/Pt, and Ag/ZnO-NW/Pt memristors, we generated current-voltage curves to verify their memristive behavior through the confirmation of hysteresis. Subsequently, we trained and inferred reservoir computing systems using these memristors with the NIST TI-46 database. Among these systems, the accuracy of the reservoir computing system based on Ti/TiOx/TaOy/Pt memristors reached 99%, confirming the Ti/TiOx/TaOy/Pt memristor structure's suitability for inferring speech recognition tasks.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.64-67
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• 2011

The effect of Ta substitution on the crystal structure, ferroelectric, and piezoelectric properties of $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}Ti_{1-x}Ta_xO_3$ ceramics has been investigated. The Ta doping resulted in a transition from coexistence of ferroelectric tetragonal and rhombohedral phases to an electrostrictive pseudocubic phase, leading to degradations of the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electricfield-induced strain was significantly enhanced by the Ta substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 566 pm/V under an applied electric field 6 kV/mm when 2% Ta was substituted on Ti sites. The abnormal enhancement in strain was attributed to the pseudocubic phase with high electrostrictive constants.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.277-284
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• 2006

The alloys were prepared by a non-consumable vacuum arc melting and homogenized at $1050^{\circ}C$ for 24 hrs. Two kind of surface modifications were performed alkali treatment in 5.0M NaOH solution subsequent and heat treatment in vacuum furnace at $600^{\circ}C$, and were oxidizing treatment at the temperature range of 550 to $750^{\circ}C$ for 30 minutes. After surface modification, these samples were soaked in SBF which consists of nearly the same ion concentration as human blood plasma. Cytotoxicity tests were performed in MTT assay treated L929 fibroblast cell culture, using indirect methods. A porous and thin activated layer was formed on Titanium and Ti-8Ta-3Nb alloy by the alkali treatment. A bone-like hydroxyapatite was nucleated on the activated porous surfaces during the in vitro test. However, Ti-8Ta-3Nb alloys showed better bioactive properties than Titanium. According to XRD results, oxide layers composed of mostly $TiO_2$(rutile) phases. Cytotoxicity test also revealed that moderate oxidation treatment lowers cell toxicity and Ti-8Ta-3Nb alloy showed better results compared with Titanium.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1615-1617
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• 2004

5 mol% $BaWO_4$를 첨가시켜 합성한 Ba$(Mg_{1/3}Ta_{2/3})O_3$를 이용하여 비방사유전세선로에 삽입되는 세라믹스 공진기를 제자하고 기존의 $MgTiO_3-CaTiO_3$계 세라믹스 공진기와 공진특성을 비교하여 그 특성을 고찰하였다. 그 결과 BMT 세라믹스는 기존의 $MgTiO_3-CaTiO_3$계 세라믹스보다 품질계수가 2배 이상 크게 높게 측정되었고, 측정 사진의 관찰 결과 전파차단성도 우수할 것으로 예상되기 때문에 BMT가 비방사유 전체선로에 삽입되는 유전체 공진기 재료로서 적용될 경우 우수한 공진특성을 발휘할 것으로 판단된다.