• Title/Summary/Keyword: Ta-Ti

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Biocompatibility and Surface Characteristics of PEO-treated Ti-40Ta-xZr Alloys for Dental Implant Materials

  • Yu, Ji-Min;Cho, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.23-23
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    • 2018
  • In this study, new titanium alloys were prepared by adding elements such as tantalum (Ta), zirconium (Zr) and the like to complement the biological, chemical and mechanical properties of titanium alloys. The Ti-40Ta-xZr ternary alloy was formed on the basis of Ti-40Ta alloy with the contents of Zr in the contents of 0, 3, 7 and 15 wt. %. Plasma electrolytic oxidation (PEO), which combines high-voltage sparks and electrochemical oxidation, is a novel method to form ceramic coatings on light metals such as Ti and its alloys. These oxide film produced by the electrochemical surface treatment is a thick and uniform porous form. It is also composed of hydroxyapatite and calcium phosphate-based phases, so it has the characteristics of bone inorganic, non-toxic and very high bioactivity and biocompatibility. Ti-40Ta-xZr alloys were homogenized in an Ar atmosphere at $1050^{\circ}C$ for 1 hour and then quenched in ice water. The electrochemical oxide film was applied by using a power supply of 280 V for 3 minutes in 0.15 M calcium acetate monohydrate ($Ca(CH_3COO)_2{\cdot}H_2O$) and 0.02 M calcium glycerophosphate ($C_3H_7CaO_6P$) electrolyte. A small amount of 0.0075M zinc acetate and magnesium acetate were added to the electrolyte to enhance the bioactivity. The mechanical properties of the coated surface of Ti-40Ta-xZr alloys were evaluated by Vickers hardness, roughness test, and elastic modulus using nano-indentation, and the surface wettability was evaluated by measuring the contact angle of the coated surface. In addition, cell activation and differentiation were examined by cell culture of HEK 293 (Human embryonic kidney 293) cell proliferation. Surface properties of the alloys were analyzed by scanning electron microscopy(FE-SEM), EDS, and X-ray diffraction analysis (XRD).

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Improvement of the Figure of Merit in Pb[(Mg1/3Ta2/3)0.7Ti0.3]O3 Systems

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
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    • v.25 no.5
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    • pp.88-91
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    • 2016
  • The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

Microstructure and Electric Properties of Ferroelectric SrBi$_2$Ta$_2$O$_9$ Thin Films Deposited by Modified Rf Magnetron Sputtering Technique (Modified Rf Magnetron Sputtering에 의해 Pt/Ti/SiO$_2$/Si 기판위에 제조된 강유전체 SrBi$_2$Ta$_2$O$_9$ 박막의 미세구조 및 전기적 특성 연구)

  • 양철훈;윤순길
    • Journal of the Korean Ceramic Society
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    • v.35 no.5
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    • pp.472-478
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    • 1998
  • Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

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A Comparison Study on the Separation Process of TaCl5 from the Chlorinated Reaction Product (염화반응법으로 제조된 TaCl5의 분리공정에 관한 비교 연구)

  • Cho, Jung-Ho;Park, So-Jin;Choi, Young-Yoon
    • Korean Chemical Engineering Research
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    • v.44 no.3
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    • pp.259-264
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    • 2006
  • The separation and purification of $TaCl_5$is indispensable in the synthetic process of $TaCl_5$by chlorination of tantalum oxide. The reaction products are mainly $TaCl_5$, $NbCl_5$, $TiCl_4$ and $FeCl_2$. However, we need to separate $TaCl_5/NbCl_5$ mixture from the reaction product, because $TaCl_5$ and $NbCl_5$ are easily separated each other by distillation or hydrogen reduction process. In this work, a comparison study was carried out between direct sequence and indirect sequence to obtain $TaCl_5/NbCl_5$ mixture from the reaction product by removing light component, $TiCl_4$ and heavy component, $FeCl_2$ using two distillation columns. It was concluded that the direct sequence gave better results than indirect sequence in the aspect of initial capital costs and the associative operating costs.

Scattering measurement of dielectric high reflection mirrors by TIS method (TIS 방법을 이용한 유전체 고반사 거울의 산란 측정)

  • 조현주;박흥진;황보창권;문환구;김진태;손승현;이재철
    • Korean Journal of Optics and Photonics
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    • v.8 no.4
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    • pp.283-290
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    • 1997
  • Scattering measurement on high reflection dielectric multilayer mirrors deposited on quartz substrate in a vacuum chamber were performed using a total integrated scattering method. Scattering of (Ta$_2$$O_5$/SiO$_2$) multilayer mirrors deposited at 250-30$0^{\circ}C$ was 0.048-0.050% and did not change with an annealing at 30$0^{\circ}C$ for 4 hours. On the other hand, scattering of (TiO$_2$/SiO$_2$) multilayer mirror at 25$0^{\circ}C$ was 0.029% and it showed the heavy tensile stress after an annealing. The rms roughness of (Ta$_2$$O_5$/SiO$_2$) multilayer mirror was almost the same as that of (TiO$_2$/SiO$_2$)multilayer mirror. The column size of Ta$_2$$O_5$ film was smaller than that of TiO$_2$film and the packing density of (Ta$_2$$O_5$/SiO$_2$) multilayer mirrors was higher than that of (TiO$_2$/SiO$_2$) multilayer mirror. It seems that the higher packing density and smaller column size of Ta$_2$$O_5$ films lead to more scattering.

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Niobian Sphene from the McDonald Pegmatite Mine, Bancroft, Ontarion, Canada: Consideration of Substitutions (카나다 온타리오 밴크로프트의 맥도날도 페그마타이트 광산에서 산출된 Nb Sphene: 원소 치환에 관한 고찰)

  • ;Donald R. Peacor
    • Journal of the Mineralogical Society of Korea
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    • v.2 no.1
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    • pp.8-10
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    • 1989
  • Sphene from the McDonald pegmatite near Bancroft, Ontario, Canada was analyzed using EPMA. It contains 4.3 to 6.3 weight percent of Nb2O5 with an average formula Ca1.02(Ti0.62Al0.22Nb0.07Fe0.06Ta0.01)Si0.99(O4.85F0.16). Three types of subtitutions are possible; 1)2Ti4+=(Nb, Ta)5+ + (Al, Fe3+), 2) Ti + O = (Al, Fe3+) + (F, OH), and 3) 2Ti + O = Fe2+ + (Nb, Ta)5+ + (F, OH). T재 different schemes of substitutions for balancing the analysis are considered when the iron is either all ferric or all ferrous. Assuming stoichiometry fo Ca and Si, a general formula derived from the two different schemes is Ca(Ti0.64Al0.22Fe3+0.06-X {{{{Fe_{x}^{2+} }} Nb0.01)Sio4.80-XF0.16(OH)0.04+x.

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Effect of the Second Heat Treatment Condition on the Dielectric Properties of SrTiO3GBL Capacitor (SrTiO3GBL Capacitor의 유전성에 대한 2차 열처리 조건의 효과)

  • 윤기현;안일석;이남양;오명환
    • Journal of the Korean Ceramic Society
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    • v.26 no.3
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    • pp.297-304
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    • 1989
  • The dielectric properties of SrTiO3 GBL Capacitor have been investigaetd as a function of the second heat treatment time and the amount of Ta. The grain size of semiconductive SrTiO3 after sintering at 1,46$0^{\circ}C$ for 4 hours in N2/H2 atmosphere increased as the amount of Ta increased, and then decreased as the amount of Ta exceed 0.01 mole. Also, the dielectric constant after the second heat treatment showed the same tendency. When the semiconductive SrTiO2 was second heat treated at 1,10$0^{\circ}C$ in air with varying time, the dielectric constant increased as the second heat treatment time increased up to 60 minutes, and then decreased as the time became longer than 60 minutes.

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